METHOD FOR PRODUCING SiC SINGLE CRYSTAL

Patent metadata

Field	Value
Publication number	US-2016273126-A1
Application number	US-201415029379-A
Country	US
Kind code	A1
Filing date	Nov 12, 2014
Priority date	Nov 12, 2013
Publication date	Sep 22, 2016
Grant date	—

Abstract

Provided is a method for producing a SiC single crystal by a solution growth method, the production method being capable of growing a SiC single crystal doped with Al even when a graphite crucible is used. The production method according to an embodiment of the present invention includes the steps of: forming a Si—C solution in a graphite crucible, and bringing a SiC seed crystal into contact with the Si—C solution and growing the SiC single crystal on the SiC seed crystal. The Si—C solution contains Si, Al, and Cu in a range satisfying Formula (1), with the balance of the Si—C solution being C and impurities. In Formula (1), [Si], [Al], and [Cu] represent contents of Si, Al and Cu expressed by mol %, respectively.
0.03<[Cu]/([Si]+[Al]+[Cu])≦0.5  (1)

First claim

1 . A method for producing a SiC single crystal by a solution growth method, the method comprising the steps of:
forming a Si—C solution containing Si, Al, and Cu in a range satisfying below-described Formula (1), with the balance being C and impurities, in a graphite crucible; and bringing a SiC seed crystal into contact with the Si—C solution and growing the SiC single crystal on the SiC seed crystal:
0.03<[Cu]/([Si]+[Al]+[Cu])≦0.5  (1)

where, [Si], [Al], and [Cu] represent contents of Si, Al and Cu expressed by mol %, respectively.

2 . A method for producing a SiC single crystal by a solution growth method, the method comprising the steps of:
forming a Si—C solution containing Si, Al, Cu, and M (M is one or more elements selected from the group consisting of Ti, Mn, Cr, Co, Ni, V, Fe, Dy, Nd, Tb, Ce, Pr, and Sc) in a range satisfying below-described Formula (2), with the balance being C and impurities, in a graphite crucible; and bringing a SiC seed crystal into contact with the Si—C solution and growing the SiC single crystal on the SiC seed crystal:
0.03<[Cu]/([Si]+[Al]+[Cu]+[M])<0.5  (2)

where, [M] represents a total of contents in mol % of one or more elements selected from the group consisting of Ti, Mn, Cr, Co, Ni, V, Fe, Dy, Nd, Tb, Ce, Pr, and Sc.

3 . The method for producing a SiC single crystal according to claim 1 , wherein
crystal growth temperature is higher than 1500° C. in the Si—C solution.

4 . The method for producing a SiC single crystal according to claim 2 , wherein crystal growth temperature is higher than 1500° C. in the Si—C solution.

5 . The method for producing a SiC single crystal according to claim 1 , wherein
contents of Al and Si in the Si—C solution satisfy below-described Formula (3):
0.14≦[Al]/[Si]≦2  (3)

6 . The method for producing a SiC single crystal according to claim 2 , wherein
contents of Al and Si in the Si—C solution satisfy below-described Formula (3):
0.14≦[Al]/[Si]≦2  (3)

7 . The method for producing a SiC single crystal according to claim 3 , wherein
contents of Al and Si in the Si—C solution satisfy below-described Formula (3):
0.14≦[Al]/[Si]≦2  (3)

8 . The method for producing a SiC single crystal according to claim 4 , wherein
contents of Al and Si in the Si—C solution satisfy below-described Formula (3):
0.14≦[Al]/[Si]≦2  (3)

Assignees

• Nippon Steel & Sumitomo Metal Corp

Inventors

• Kusunoki Kazuhiko
• Kamei Kazuhito

Classifications

• C30B19/062

  Vertical dipping system · CPC title

• C30B19/04 Primary

  the solvent being a component of the crystal composition · CPC title

• C30B9/06

  using as solvent a component of the crystal composition · CPC title

• C30B19/12

  characterised by the substrate · CPC title

• C30B29/36

  Carbides · CPC title