Method of depositing material

Patent metadata

Field	Value
Publication number	US-9951417-B2
Application number	US-201414507540-A
Country	US
Kind code	B2
Filing date	Oct 6, 2014
Priority date	Jan 30, 2011
Publication date	Apr 24, 2018
Grant date	Apr 24, 2018

Abstract

Material is deposited in a desired pattern by spontaneous deposition of precursor gas at regions of a surface that are prepared using a beam to provide conditions to support the initiation of the spontaneous reaction. Once the reaction is initiated, it continues in the absence of the beam at the regions of the surface at which the reaction was initiated.

First claim

We claim as follows:

1. A method of depositing material onto a work piece in a vacuum chamber of a particle beam system, comprising:
providing within the vacuum chamber a metal-containing precursor gas and a halogen-containing activator gas;
providing a work piece having a surface that does not provide conditions sufficient for reacting the metal-containing precursor gas with the halogen-containing activator gas; and
directing a beam toward a portion of the surface to provide reacting conditions at the portion of the surface, the portion of the surface, initialing a spontaneous deposition reaction between the metal-containing precursor gas and the halogen-containing activator gas present at the portion of the surface, thereby causing deposition of a material onto the portion of the surface, wherein the halogen-containing activator gas decomposes the precursor gas into the material and one or more volatile compounds in the presence of the portion of the surface providing reacting conditions.

2. The method of claim 1 in which the beam is discontinued whilst continuing to provide the metal-containing precursor gas and the halogen-containing activator gas at the surface to continue to deposit material in the absence of the beam at positions at which the deposition was initiated.

3. The method of claim 1 in which the deposition is initiated whilst the work piece is maintained at a temperature of less than 100° C.

4. The method of claim 1 in which directing the beam toward a portion of the surface to provide reacting conditions at the portion of the surface that initiate a spontaneous deposition reaction between the metal-containing precursor gas and the halogen-containing activator gas present at the portion of the surface comprises directing a charged particle beam or a photon beam toward the work piece.

5. The method of claim 1 in which providing a work piece having a surface that does not provide conditions sufficient for reacting the metal-containing precursor gas with the halogen-containing activator gas further comprises heating the work piece above room temperature.

6. A method of depositing material onto a work piece, comprising:
directing a beam toward a work piece positioned within a vacuum chamber to prepare a work piece surface that includes first regions that support the initiation of a spontaneous deposition reaction between a precursor gas comprising an inorganic compound with metal ligands and a halogen-containing activator gas and second regions that do not support the initiation of the spontaneous deposition reaction; and
providing the precursor gas and the activator gas at the work piece surface such that the precursor gas and the activator gas adsorb onto the first regions and spontaneously react with each other to deposit a metal at the first regions to selectively deposit metal in a pattern onto the work piece surface, wherein the halogen-containing activator gas decomposes the precursor gas into the metal and one or more volatile compounds in the presence of the first regions that support the initiation of the spontaneous deposition reaction.

7. The method of claim 6 in which the spontaneous deposition reaction continues in the absence of directing the beam toward the work piece.

8. The method of claim 6 in which the deposition is initiated at room temperature.

9. The method of claim 6 in which the deposition is initiated whilst the work piece is maintained at a temperature of less than 200° C.

10. The method of claim 7 in which the material that is spontaneously deposited supports subsequent spontaneous deposition.

11. The method of claim 10 in which the deposition is stopped by decreasing the concentration or partial pressure of either one of the precursor gas and the halogen-containing activator gas at the work piece surface.

12. The method of claim 6 further comprising directing an ion beam toward the deposited material to increase the density of the material.

13. The method of claim 6 in which directing the beam toward a work piece to prepare a work piece surface that includes first regions that support the initiation of a spontaneous deposition reaction between a metal-containing precursor gas and a halogen-containing activator gas and second regions that do not support the initiation of the spontaneous deposition reaction includes directing an electron beam toward the work piece while providing at the work piece surface the metal-containing precursor gas and the halogen-containing activator gas.

14. The method of claim 6 in which directing the beam toward a work piece to prepare a work piece surface that includes first regions that support the initiation of a spontaneous deposition reaction between a metal-containing precursor gas and a halogen-containing activator gas and portions that do not support the initiation of the spontaneous deposition reaction includes directing an ion beam toward the work piece before providing at the work piece surface the metal-containing precursor gas and the halogen-containing activator gas.

15. The method of claim 6 in which directing the beam toward a work piece to prepare a work piece surface that includes first regions that support the initiation of a spontaneous deposition reaction between a metal-containing precursor gas and a halogen-containing activator gas and second regions that do not support the initiation of the spontaneous deposition reaction includes directing a photon beam toward the work piece before providing at the work piece surface the metal-containing precursor gas and the halogen-containing activator gas.

16. The method of claim 6 in which directing the beam toward a work piece to prepare a work piece surface that includes first regions that support the initiation of a spontaneous deposition reaction between a metal-containing precursor gas and a halogen-containing activator gas and second regions that do not support the initiation of the spontaneous deposition reaction includes directing the beam to deposit an initial layer onto the work piece, the initial layer supporting the initiation of the spontaneous deposition reaction.

17. The method of claim 6 in which directing the beam toward a work piece to prepare a work piece surface that includes first regions that support the initiation of a spontaneous deposition reaction between a metal-containing precursor gas and a halogen-containing activator gas and second regions that do not support the initiation of the spontaneous deposition reaction includes directing the beam to deposit an initial layer onto the work piece, the initial layer inhibiting the initiation of the spontaneous deposition reaction.

18. The method of claim 6 in which the work piece is maintained at a temperature below a temperature of the walls of the vacuum chamber to cause the precursor gas and the halogen-containing activator gas to preferentially react on the surface of the first regions of the work piece.

19. The method of claim 6 further comprising stopping the spontaneous deposition reaction by reducing a partial pressure of the precursor gas or the halogen-containing activator gas.

20. The method of claim 6 in which the material deposited has a resistivity of less than 2000 micro ohm-cm.

21. The method of claim 20 in which the material deposited has a resistivity of less than 100 micro ohm-cm.

Assignees

• Fei Co

Inventors

• Botman Aurélien Philippe Jean Maclou
• Randolph Steven
• Toth Milos

Classifications

• C23C16/48

  by irradiation, e.g. photolysis, radiolysis, particle radiation · CPC title

• C23C16/0263 Primary

  Irradiation with laser or particle beam · CPC title

• C23C16/14

  Deposition of only one other metal element · CPC title

• C23C16/52

  Controlling or regulating the coating process {(C23C16/45557, C23C16/279 take precedence)} · CPC title

• C23C16/4488

  by in situ generation of reactive gas by chemical or electrochemical reaction · CPC title