Growing graphene on substrates
US-9595436-B2 · Mar 14, 2017 · US
Method to transfer two dimensional film grown on metal-coated wafer to the wafer itself in a face-to-face manner
US9966250B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9966250-B2 |
| Application number | US-201715608525-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 30, 2017 |
| Priority date | Aug 5, 2013 |
| Publication date | May 8, 2018 |
| Grant date | May 8, 2018 |
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- Title
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Abstract
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A method of in-situ transfer during fabrication of a component comprising a 2-dimensional crystalline thin film on a substrate is disclosed. In one embodiment, the method includes forming a layered structure comprising a polymer, a 2-dimensional crystalline thin film, a metal catalyst, and a substrate. The metal catalyst, being a growth medium for the two-dimensional crystalline thin film, is etched and removed by infiltrating liquid to enable the in-situ transfer of the two-dimensional crystalline thin film directly onto the underlying substrate.
First claim
Opening claim text (preview).
What is claimed is: 1. A method for transferring a thin film to a substrate, comprising: etching a metal catalyst disposed between the thin film and the substrate, wherein the etching simultaneously promotes in-situ face-to-face contact between the crystalline thin film and the substrate without the need to delaminate and transfer the film to the substrate, wherein the in-situ face-to-face contact between the crystalline thin film and the substrate further comprises release of gas bubbles from a subsurface gas source implanted in the substrate. 2. The method of claim 1 , wherein the release of the gas bubbles forms capillary bridges. 3. The method of claim 2 , wherein the capillary bridges progressively replace the etched metal layer at the interface between the crystalline thin film and the substrate in the presence of a fluid infiltrated at the interface. 4. The method of claim 3 , wherein the fluid is selected from the group consisting of an etchant, a solvent and a surface active agent, or a combination thereof. 5. The method of claim 4 , wherein the surface active agent removes creases and ripples in the crystalline thin film.
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Classifications
being chalcogenide semiconductor materials not being oxides, e.g. ternary compounds · CPC title
Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement · CPC title
introduced into a nitride material, e.g. changing SiN to SiON · CPC title
Controlling the interface between substrate and epitaxial layer, e.g. by ion implantation followed by annealing · CPC title
Carbon, e.g. diamond-like carbon · CPC title
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- What does patent US9966250B2 cover?
- A method of in-situ transfer during fabrication of a component comprising a 2-dimensional crystalline thin film on a substrate is disclosed. In one embodiment, the method includes forming a layered structure comprising a polymer, a 2-dimensional crystalline thin film, a metal catalyst, and a substrate. The metal catalyst, being a growth medium for the two-dimensional crystalline thin film, is e…
- Who is the assignee on this patent?
- Nat Univ Singapore
- What technology area does this patent fall under?
- Primary CPC classification H10P14/3241. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue May 08 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 4 related publications on this page (citations in our corpus or others sharing the same primary CPC).