Semiconductor device resistor structure

Patent metadata

Field	Value
Publication number	US-9923046-B1
Application number	US-201615271730-A
Country	US
Kind code	B1
Filing date	Sep 21, 2016
Priority date	Sep 21, 2016
Publication date	Mar 20, 2018
Grant date	Mar 20, 2018

Abstract

A resistor body is separated from a doped well in a substrate by a resistor dielectric material layer. The doped well is defined by at least one doped region and can include a dopant gradient in the doped well to reduce parasitic capacitance of the resistor structure while retaining heat dissipation properties of the substrate. The resistor body is formed in a cavity in a dielectric layer deposited on the substrate, which deposition can be part of a concurrent fabrication, such as part of forming shallow trench isolations, and the cavity can be lined with the resistor dielectric material.

First claim

What is claimed is:

1. A resistor structure comprising:
at least one resistor body;
a resistor dielectric material below the at least one resistor body;
a first semiconductor layer of a first semiconductor material below the resistor dielectric material and the at least one resistor body, the resistor dielectric material being on a top surface of the first semiconductor layer;
a well in the first semiconductor layer below the resistor dielectric material, the well including at least one doped region of the first semiconductor layer below the at least one resistor body; and
a first dopant disposed in the well in each of the at least one doped region, a type of the first dopant and at least one concentration of the first dopant being selected to provide a depletion region in the well at an operating voltage of the resistor structure;
wherein the first dopant is at a first concentration at a first distance from a top surface of the well and is at a second concentration at a second distance from the top surface of the well, the second distance being larger than the first distance.

2. The resistor structure of claim 1 , wherein the first concentration is higher than the second concentration.

3. The resistor structure of claim 1 , wherein the resistor dielectric material includes at least one of silicon dioxide (SiO 2 ) or hafnium oxide (HfO 2 ).

4. The resistor structure of claim 1 , wherein each resistor body includes a doped semiconductor material.

5. The resistor structure of claim 4 , wherein the doped semiconductor material includes polysilicon.

6. The resistor structure of claim 1 , further comprising an insulative layer on the first semiconductor layer, a plurality of cavities formed in the insulative layer and extending from a surface of the insulative layer to a surface of the first semiconductor layer, the plurality of cavities including at least one resistor cavity over the well, and each of the at least one resistor body is in a respective resistor cavity.

7. The resistor structure of claim 6 , wherein each resistor cavity is lined with the resistor dielectric material.

8. A semiconductor device resistor structure comprising:
a first semiconductor layer including a first semiconductor material;
a well defined in the first semiconductor layer by at least one doped region in the first semiconductor layer;
a first dopant in each doped region of the at least one doped region of the well, the first dopant being present at a first concentration at a first distance from a surface of the well and at a second concentration at a second distance from the surface of the well that is larger than the first distance;
an electrically insulative support layer on the first semiconductor layer;
a plurality of cavities formed in the support layer and extending from a surface of the support layer to a surface of the first semiconductor layer; and
at least one resistor body each formed over the well in a respective resistor cavity of the plurality of cavities.

9. The semiconductor device resistor structure of claim 8 , further comprising an electrically insulative resistor dielectric layer of a second electrically insulative material deposited at least between the surface of the first semiconductor layer and each resistor body.

10. The semiconductor device resistor structure of claim 9 , wherein the second electrically insulative material includes at least one of silicon dioxide (SiO 2 ) or hafnium oxide (HfO 2 ).

11. The semiconductor device resistor structure of claim 9 , wherein the second electrically insulative material includes a gate dielectric material.

12. The semiconductor device resistor structure of claim 8 , wherein each resistor body includes doped polysilicon.

Assignees

• Globalfoundries Inc

Inventors

• Zang Hui
• Watts Josef S
• Pandey Shesh M

Classifications

• H10P14/69392

  the material containing hafnium, e.g. HfO2 · CPC title

• H10P14/69215

  the material being a silicon oxide, e.g. SiO2 · CPC title

• H10P14/3456

  Polycrystalline · CPC title

• H10P14/3444

  P-type · CPC title

• H10P14/3411

  Silicon, silicon germanium or germanium · CPC title