Method for evaluating quality of oxide semiconductor thin film and laminated body having protective film on surface of oxide semiconductor thin film, and method for managing quality of oxide semiconductor thin film

Patent metadata

Field	Value
Publication number	US-9780005-B2
Application number	US-201515315287-A
Country	US
Kind code	B2
Filing date	Jul 6, 2015
Priority date	Jul 16, 2014
Publication date	Oct 3, 2017
Grant date	Oct 3, 2017

Abstract

Provided is a method for reliably and simply evaluating the quality of an oxide semiconductor thin film and a laminated body having a protective film on the surface of this oxide semiconductor thin film. Also provided is a method for reliably and simply managing the quality of an oxide semiconductor thin film. This method, which is for evaluating the quality of an oxide semiconductor thin film and a laminated body having a protective film on the surface of this oxide semiconductor thin film, has: a first step, wherein an oxide semiconductor thin film is formed on a substrate, after which the electron state of the oxide semiconductor thin film is measured by a contact method or a noncontact method, thereby evaluating defects arising from in-film defects in the oxide semiconductor thin film; and a second step, wherein the oxide semiconductor thin film is processed on the basis of a condition determined on the basis of that evaluation, after which a protective film is formed on the surface of the oxide semiconductor thin film, and then the electron state of the oxide semiconductor thin film is measured by a contact method or a noncontact method, thereby evaluating defects arising from defects at the interface between the oxide semiconductor thin film and the protective film.

First claim

The invention claimed is:

1. A quality evaluation method of a laminate including an oxide semiconductor thin film and a protective film on a surface of the oxide semiconductor thin film, the method comprising:
a first step of evaluating a failure caused by an in-film defect in the oxide semiconductor thin film by measuring an electronic state of the oxide semiconductor thin film by one of a contact method and a noncontact method after the oxide semiconductor thin film is formed on a substrate; and
a second step of evaluating a failure caused by an interfacial defect between the oxide semiconductor thin film and the protective film by measuring the electronic state of the oxide semiconductor thin film by one of a contact method and a noncontact method after the protective film is formed on a surface of the oxide semiconductor thin film processed at a condition determined based on the evaluation.

2. The evaluation method according to claim 1 , wherein the electronic state of the oxide semiconductor thin film is measured based on electrical resistivity of the oxide semiconductor thin film.

3. The evaluation method according to claim 1 , wherein the failure caused by the in-film defect is evaluated in the first step, thereby when a negative bias is applied to a thin film transistor together with light irradiation, a difference in threshold voltage ΔV th between before and after application of the negative bias is indirectly evaluated.

4. The evaluation method according to claim 1 , wherein one of the following (1) to (3) is evaluated by evaluating the failure caused by the interfacial defect in the second step,
(1) threshold voltage V th of a thin film transistor,
(2) a difference in threshold voltage ΔV th between before and after application of a positive bias to the thin film transistor, and
(3) a difference between a threshold voltage at first measurement and a threshold voltage after multiple times of measurement when the threshold voltage of the thin film transistor is measured multiple times.

5. The evaluation method according to claim 1 , wherein when the failure caused by the in-film defect is measured by the contact method in the first step, a first electrode and a second electrode are provided on the surface of the oxide semiconductor thin film, and the failure is evaluated based on one of a measured current value and a measured voltage.

6. The evaluation method according to claim 1 , wherein when the failure caused by the interfacial defect is measured by the contact method in the second step, a first electrode and a second electrode are provided so as to be in contact with two sides of the protective film, and the failure is evaluated based on one of a measured current value and a measured voltage.

7. The evaluation method according to claim 2 , wherein when the electrical resistivity of the oxide semiconductor thin film is measured by the contact method, a measuring terminal having at least two electrodes is brought into contact with the oxide semiconductor thin film to measure a current value.

8. The evaluation method according to claim 1 , wherein when the electronic state of the oxide semiconductor thin film is measured by the noncontact method,
the electronic state of the oxide semiconductor thin film is measured based on a reflectance measuring step of irradiating the oxide semiconductor thin film with excitation light and a microwave, measuring maximum of a reflected wave of the microwave from a portion subjected to the irradiation, the maximum being varied by irradiation of the excitation light, and then stopping irradiation of the excitation light, and measuring temporal change in reflectance of the reflected wave of the microwave from the portion subjected to the irradiation after stopping the irradiation of the excitation light, and
a parameter calculation step of calculating a parameter corresponding to slow decay, the slow decay being observed after stopping the irradiation of the excitation light, from the temporal change in reflectance.

9. The evaluation method according to claim 8 , wherein in the parameter calculation step, a parameter corresponding to slow decay observed at 0.1 to 10 μs after stopping the irradiation of the excitation light is calculated from the change in reflectance to evaluate the electronic state of the oxide semiconductor thin film.

10. A quality control method of an oxide semiconductor thin film,
wherein a reflectance measurement step of irradiating the oxide semiconductor thin film with excitation light and a microwave, measuring maximum of a reflected wave of the microwave from a portion subjected to the irradiation, the maximum being varied by irradiation of the excitation light, and then stopping the irradiation of the excitation light, and measuring temporal change in reflectance of the reflected wave of the microwave from the portion subjected to the irradiation after stopping the irradiation of the excitation light, and
a parameter calculation step of calculating a parameter corresponding to slow decay, the slow decay being observed after stopping the irradiation of the excitation light, from the temporal change in reflectance,
are applied to each of two appropriate steps of a manufacturing process of a laminate including an oxide semiconductor thin film and a protective film on a surface of the oxide semiconductor thin film, and
wherein the parameters corresponding to slow decay of the parameter calculation step are calculated as a parameter PX1 and a parameter PX2, and an electronic state of the oxide semiconductor thin film is evaluated based on a difference ΔP between the parameters (PX1−PX2, where PX2 is a parameter of a manufacturing step later than PX1).

11. The quality control method according to claim 10 , wherein the parameters corresponding to the maximum of the reflected wave of the reflectance measurement step are calculated as a parameter QX1 and a parameter QX2, and the electronic state of the oxide semiconductor thin film is evaluated based on a difference ΔQ between QX1 and QX2 (QX1−QX2) and the difference ΔP between the parameters PX1 and PX2 (PX1−PX2).

12. The quality control method according to claim 11 , wherein the parameter corresponding to the maximum of the reflected wave of the reflectance measurement step is represented as parameter Q in ordinate of a graph, and the parameter corresponding to slow decay of the parameter calculation step is represented as parameter P in abscissa of the graph, and the parameters (QX1, PX1) and the parameters (QX2, PX2) are plotted on the graph and thus the electronic state of the oxide semiconductor thin film is evaluated.

13. The quality control method according to claim 10 , wherein the oxide semiconductor thin film is provided on a surface of an insulating film.

14. The quality control method according to claim 10 , wherein the oxide semiconductor thin film is subjected to a heat treatment.

Assignees

• Kobe Steel Ltd

Inventors

• Kawakami Nobuyuki
• Hayashi Kazushi
• Kugimiya Toshihiro
• Ochi Mototaka

Classifications

• H10P74/207

  Electrical properties, e.g. testing or measuring of resistance, deep levels or capacitance-voltage characteristics · CPC title

• H10P74/203 Primary

  Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects · CPC title

• G01R31/2656

  using non-ionising electromagnetic radiation, e.g. optical radiation · CPC title

• H01L29/41733

  Electricity · mapped topic

• H01L22/14

  Electricity · mapped topic