Method and apparatus for using universal cavity wafer in wafer level packaging
US-2016365321-A1 · Dec 15, 2016 · US
Anodic oxide film structure cutting method and unit anodic oxide film structure
US9764949B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9764949-B2 |
| Application number | US-201615259478-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 8, 2016 |
| Priority date | Sep 21, 2015 |
| Publication date | Sep 19, 2017 |
| Grant date | Sep 19, 2017 |
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- Title
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Abstract
Official abstract text for this publication.
An anodic oxide film structure cutting method is provided. The method includes: an etching step of forming an etched groove by etching one surface of an anodic oxide film having a plurality of anodizing pores along a predetermined cutting line and forming increased-diameter pores by enlarging entrances of the anodizing pores positioned on an inner bottom surface of the etched groove; and a cutting step of cutting the anodic oxide film along the etched groove. Also provided is a unit anodic oxide film structure produced by the cutting method.
First claim
Opening claim text (preview).
What is claimed is: 1. A unit anodic oxide film structure, comprising: a body portion having a plurality of anodizing pores formed vertically therein; a step portion having a step difference formed so as to surround the periphery of said body portion, wherein an upper surface of said step portion is positioned lower than an upper surface of said body portion; electrodes formed on said upper surface of said body portion; and a plurality of increased-diameter pores formed on said upper surface of said step portion, the diameter of entrances of the increased-diameter pores is larger than the diameter of entrances of the anodizing pores formed on said upper surface of said body portion, and at least some of said entrances of said increased-diameter pores formed on said upper surface of said step portion being connected to each other to form a space, wherein the increased-diameter pores and the space serve to relieve external stresses acting in a lateral direction.
Assignees
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Classifications
Cutting or separating of wafers, substrates or parts of devices · CPC title
Multistep processes involving only mechanical separation, e.g. grooving followed by cleaving · CPC title
Electrochemical etching, anodic oxidation · CPC title
- B81C1/00825Primary
Protect against mechanical threats, e.g. against shocks, or residues (B81C1/00261 take precedence) · CPC title
Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title
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- What does patent US9764949B2 cover?
- An anodic oxide film structure cutting method is provided. The method includes: an etching step of forming an etched groove by etching one surface of an anodic oxide film having a plurality of anodizing pores along a predetermined cutting line and forming increased-diameter pores by enlarging entrances of the anodizing pores positioned on an inner bottom surface of the etched groove; and a cutt…
- Who is the assignee on this patent?
- Point Engineering Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification B81C1/00825. Mapped technology areas include Operations & Transport.
- When was this patent published?
- Publication date Tue Sep 19 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).