Monolithic mems platform for integrated pressure, temperature, and gas sensor
US-2016266061-A1 · Sep 15, 2016 · US
US2016340180A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016340180-A1 |
| Application number | US-201514718152-A |
| Country | US |
| Kind code | A1 |
| Filing date | May 21, 2015 |
| Priority date | May 21, 2015 |
| Publication date | Nov 24, 2016 |
| Grant date | — |
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One example discloses an chip, comprising: a substrate; a first side of a passivation layer coupled to the substrate; a device, having a device height and a cavity, wherein a first device surface is coupled to a second side of the passivation layer which is opposite to the first side of the passivation layer; and a set of structures coupled to the second side of the passivation layer and configured to have a structure height greater than or equal to the device height.
Opening claim text (preview).
1 . A chip, comprising: a substrate; a first side of a passivation layer coupled to the substrate; a device, having a device height and a cavity, wherein a first device surface is coupled to a second side of the passivation layer which is opposite to the first side of the passivation layer; and a set of structures coupled to the chip, the set of structures configured to have a structure height greater than or equal to the device height and configured to reduce at least one of pressure gradients or damage to the device during processing of the chip. 2 . The chip of claim 1 , wherein the set of structures are coupled to the substrate. 3 . The chip of claim 1 wherein the set of structures are coupled to the second side of the passivation layer. 4 . The chip of claim 1 , wherein the structures are of a same type and are on at least four sides of the device. 5 . The chip of claim 4 , wherein the structure types include at least one of: a rigid structure, a closed device, a spacer structure, a support structure, a reference capacitor, a decoupling capacitor, a polyimide, or a structure that does not contain a cavity. 6 . The chip of claim 1 , wherein the structures completely surround the device. 7 . The chip of claim 1 , wherein the set of structures are configured to have a structure height greater than or equal to the device height. 8 . The chip of claim 1 , wherein the set of structures include a surface configured to receive an adhesive tape. 9 . The chip of claim 8 , further comprising the adhesive tape, wherein the tape is coupled only to the structures. 10 . The chip of claim 1 , wherein the device is at least one of: a membrane, a transducer, a MEMS device, or a pressure sensor. 11 . The chip of claim 1 , further comprising a seal layer on top of the device. 12 . The chip of claim 1 , wherein the substrate includes an integrated circuit on the first side of the passivation layer. 13 . The chip of claim 12 , wherein the integrated circuit is an analog circuit and the structures are decoupling capacitors. 14 . The chip of claim 12 , wherein the integrated circuit does not include the structures. 15 . A method fabricating a chip, wherein the chip comprises: a substrate; a first side of a passivation layer coupled to the substrate; a device, having a device height and a cavity, wherein a first device surface is coupled to a second side of the passivation layer which is opposite to the first side of the passivation layer; and a set of structures coupled to the second side of the passivation layer and configured to have a structure height greater than or equal to the device height, the method comprising: applying tape to a first side of the chip; grinding a second side of the chip opposite to the first side; and wherein the structures are configured to spread a pressure exerted during the grinding process so as to reduce at least one of pressure gradients or damage to the device during the grinding process. 16 . The method of claim 15 , further comprising removing the tape from the chip, wherein the structures are configured to prevent removal of the tape from damaging the device.
used to protect an active side of a device or wafer · CPC title
used during dicing or grinding · CPC title
Wafer tapes, e.g. grinding or dicing support tapes · CPC title
Capacitive arrangements (H10W44/20 takes precedence) · CPC title
Pressure sensors · CPC title
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