MEMS device and method of manufacturing a MEMS device

US9402138B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9402138-B2
Application numberUS-201213651372-A
CountryUS
Kind codeB2
Filing dateOct 12, 2012
Priority dateOct 12, 2012
Publication dateJul 26, 2016
Grant dateJul 26, 2016

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A method for manufacturing a MEMS device is disclosed. Moreover a MEMS device and a module including a MEMS device are disclosed. An embodiment includes a method for manufacturing MEMS devices includes forming a MEMS stack on a first main surface of a substrate, forming a polymer layer on a second main surface of the substrate and forming a first opening in the polymer layer and the substrate such that the first opening abuts the MEMS stack.

First claim

Opening claim text (preview).

What is claimed is: 1. A MEMS device comprising: a polymer layer; a substrate disposed on the polymer layer; a MEMS stack disposed on the substrate; a first through opening having a first width and disposed in the polymer layer; a second through opening having a second width and disposed in the substrate such that the second through opening abuts the MEMS stack and the first through opening, wherein a major surface of the polymer layer comprises a contact area for mounting the MEMS device; and a third through opening comprising an empty space disposed in the polymer layer, wherein the first through opening is laterally separated from the third through opening by a region of the polymer layer, wherein the polymer layer, the substrate, the MEMS stack, the first through opening, the second through opening, and the third through opening are part of the MEMS device that is configured to be operational. 2. The MEMS device according to claim 1 , wherein the second through opening is larger than the first through opening. 3. The MEMS device according to claim 1 , wherein the first through opening is disposed inside the third through opening. 4. The MEMS device according to claim 1 , wherein the MEMS device further comprises a hard mask layer disposed between the substrate and the polymer layer. 5. The MEMS device according to claim 1 , wherein the MEMS stack comprises a backplate and a membrane. 6. The MEMS device according to claim 5 , wherein the membrane is closer to the substrate than the backplate. 7. The MEMS device according to claim 5 , wherein the backplate is closer to the substrate than the membrane. 8. The MEMS device according to claim 1 , wherein the substrate comprises a pre-amplifier and input/output pads. 9. A module comprising: a MEMS device carrier; and a MEMS device comprising: a polymer layer, wherein a major surface of the polymer layer comprises a contact area for mounting the MEMS device; a substrate disposed on the polymer layer; a mask layer disposed between the substrate and the polymer layer; a MEMS stack disposed on the substrate; an opening through the polymer layer and the substrate connecting the MEMS stack, wherein the MEMS device is mounted on the MEMS carrier device at the contact area of the polymer layer, and a ring opening comprising a ring shaped opening having an opening width narrower than an opening width of the opening disposed in the polymer layer, the ring shaped opening surrounding the opening through the polymer layer, wherein the ring shaped opening exposes a region of the mask layer and comprises empty space. 10. The module according to claim 9 , wherein the substrate comprises a thickness of 100 μm to 200 μm. 11. The module according to claim 10 , wherein the polymer layer comprises a thickness of 100 μm to 200 μm. 12. A MEMS device comprising: a polymer layer, wherein a major surface of the polymer layer comprises a contact area for mounting the MEMS device; a substrate disposed on the polymer layer, the substrate comprising a thickness of 100 μm to 200 μm, the polymer layer comprising a thickness of 100 μm to 200 μm; a MEMS stack disposed on the substrate, the MEMS stack comprising a thickness of 100 μm to 200 μm; and a first through opening disposed in the polymer layer and the substrate, the first through opening exposing the MEMS stack; and a second through opening comprising an empty space disposed in the polymer layer, the second through opening disposed around the first through opening, wherein the polymer layer, the substrate, the MEMS stack, the first through opening, and the second through opening are part of the MEMS device that is configured to be operational. 13. The MEMS device according to claim 12 , wherein the polymer layer is a negative photoresist layer. 14. The MEMS device according to claim 12 , wherein the polymer layer is a positive photoresist layer. 15. The MEMS device according to claim 12 , further comprising a hard mask layer disposed between the substrate and the polymer layer. 16. The MEMS device according to claim 12 , wherein the second through opening comprises a ring trench disposed around the first through opening. 17. The MEMS device according to claim 16 , wherein the first through opening comprises a smaller diameter than the ring trench. 18. The module according to claim 10 , further comprising an adhesive connecting the MEMS device carrier and the MEMS device. 19. The MEMS device according to claim 1 , wherein an opening width of the third through opening is narrower than the first width. 20. The module according to claim 9 , wherein the opening comprises a first portion in the polymer layer and second portion in the substrate, wherein the first portion has a first width and the second portion has a second width. 21. The module according to claim 20 , wherein the first width is the same as the second width. 22. The module according to claim 20 , wherein the first width is greater than the second width. 23. The module according to claim 9 , wherein the MEMS stack comprises a back plate and a membrane. 24. The module according to claim 23 , wherein the membrane is disposed between the substrate and the back plate. 25. The module according to claim 23 , wherein the back plate is disposed between the substrate and the membrane. 26. The module according to claim 9 , wherein the substrate comprises a pre-amplifier and input/output pads.

Assignees

Inventors

Classifications

  • Methods for controlling internal stress of deposited layers not provided for in B81C2201/0164 - B81C2201/0169 · CPC title

  • H04R19/04Primary

    Microphones (H04R19/01 takes precedence) · CPC title

  • Accelerometers · CPC title

  • characterised by special arrangements of the devices, allowing an easier separation · CPC title

  • Microphones or microspeakers · CPC title

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What does patent US9402138B2 cover?
A method for manufacturing a MEMS device is disclosed. Moreover a MEMS device and a module including a MEMS device are disclosed. An embodiment includes a method for manufacturing MEMS devices includes forming a MEMS stack on a first main surface of a substrate, forming a polymer layer on a second main surface of the substrate and forming a first opening in the polymer layer and the substrate s…
Who is the assignee on this patent?
Infineon Technologies Ag
What technology area does this patent fall under?
Primary CPC classification H04R19/04. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Jul 26 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).