Magnetic multilayer structure

Patent metadata

Field	Value
Publication number	US-9601484-B2
Application number	US-201615156576-A
Country	US
Kind code	B2
Filing date	May 17, 2016
Priority date	Jan 15, 2014
Publication date	Mar 21, 2017
Grant date	Mar 21, 2017

Abstract

A mechanism is provided for an integrated laminated magnetic device. A substrate and a multilayer stack structure form the device. The multilayer stack structure includes alternating magnetic layers and diode structures formed on the substrate. Each magnetic layer in the multilayer stack structure is separated from another magnetic layer in the multilayer stack structure by a diode structure.

First claim

What is claimed is:

1. A method for fabricating an integrated laminated magnetic device, comprising:
forming a seed layer on a substrate;
forming a mask structure over the seed layer, wherein the mask structure exposes an exposed portion of the seed layer that defines a device region;
electroplating a first magnetic layer on the exposed portion of the seed layer within the device region using the seed layer as an electrical cathode or anode;
forming a diode structure on the first magnetic layer in the device region;
electroplating a second magnetic layer on the diode structure within the device region using the seed layer as the electrical cathode or anode;
wherein the first magnetic layer is electrically connected to the second magnetic layer by the diode structure being in a forward bias direction; and
wherein a combination of the first magnetic layer, the diode structure, and the second magnetic layer form a sandwich.

2. The method of claim 1 , further comprising constructing a multilayer stack structure of multiple sandwiches having multiple first magnetic layers, multiple second magnetic layers, and multiple diode structures;
wherein one of the multiple diode structures is interposed between one of the multiple first magnetic layers and one of the multiple second magnetic layers.

3. The method of claim 2 , wherein the multiple diode structures are forwarded bias in a same direction in the multilayer stack structure;
wherein the same direction is the forward bias direction.

4. The method of claim 2 , wherein an electrical eddy current in the multilayer stack structure is inhibited from flowing in a reverse bias direction between each of the multiple first magnetic layers and the multiple second magnetic layers.

Assignees

• IBM

Inventors

• Herget Philipp
• O'Sullivan Eugene J
• Romankiw Lubomyr T
• Wang Naigang
• Webb Bucknell C

Classifications

• H01L27/0641 Primary

  Electricity · mapped topic

• H01F7/021

  Construction of PM (H01F7/0278 takes precedence; PM compositions H01F1/032) · CPC title

• H01L27/224

  Electricity · mapped topic

• H01L28/10

  Electricity · mapped topic

• H10D84/60

  characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs (H10D84/40 takes precedence) · CPC title