Semiconductor device including a fuse formed on a high thermal conductivity insulating film

Patent metadata

Field	Value
Publication number	US-9917054-B2
Application number	US-201414894178-A
Country	US
Kind code	B2
Filing date	Nov 27, 2014
Priority date	Nov 27, 2014
Publication date	Mar 13, 2018
Grant date	Mar 13, 2018

Abstract

As means for preventing a leakage of a fuse element cut by laser trimming due to a conductive residue or the like, an insulating film which has a high thermal conductivity and a relatively low adhesion is formed between an element isolation region and the fuse element in the case of forming the fuse element on the element isolation region in a groove on a main surface of an epitaxial substrate. When the fuse element is cut by performing the laser trimming, both of a part of the fuse element and the insulating film below the part of the fuse element are removed.

First claim

The invention claimed is:

1. A semiconductor device comprising:
a semiconductor substrate;
a first insulating film on the semiconductor substrate;
a second insulating film formed on the first insulating film; and
a fuse including a conductive film containing silicon formed on the second insulating film,
wherein a portion of an upper surface of the first insulating film is exposed through an opening formed in a portion of the fuse and the second insulating film positioned above the first insulating film, and
wherein the second insulating film has a thermal conductivity higher than a thermal conductivity of the first insulating film.

2. The semiconductor device according to claim 1 ,
wherein an expansion coefficient of the second insulating film is higher than an expansion coefficient of a silicon film, and an expansion coefficient of the first insulating film is lower than an expansion coefficient of the silicon film, so that adhesion of the second insulating film to the first insulating film is lower than adhesion of the silicon film to the first insulating film.

3. The semiconductor device according to claim 1 ,
wherein a groove is formed on the upper surface of the first insulating film right below the conductive film, and
a portion of the second insulating film is buried in the groove.

4. The semiconductor device according to claim 3 ,
wherein a sidewall of the groove is formed to be perpendicular to a main surface of the semiconductor substrate.

5. The semiconductor device according to claim 3 ,
wherein a sidewall of the groove is tapered such that an opening width of the groove becomes smaller from a bottom portion of the groove toward an upper portion of the groove.

6. The semiconductor device according to claim 1 , further comprising:
a third insulating film formed on the conductive film,
wherein the opening is formed by a portion of a stacked film made up of the second insulating film, the conductive film forming the fuse, and the third insulating film,
the fuse is cut by the opening, and
the portion of the upper surface of the first insulating film is exposed on a bottom surface of the opening.

7. The semiconductor device according to claim 6 ,
wherein a sidewall of a groove formed on the upper surface of the first insulating film is exposed on the bottom surface of the opening.

8. The semiconductor device according to claim 6 ,
wherein, in plan view, in a sidewall inside the opening the second insulating film terminates at a position closer to a center of the opening than the conductive film.

9. The semiconductor device according to claim 1 ,
wherein the first insulating film contains silicon oxide, and
the second insulating film contains silicon nitride or silicon carbide.

10. The semiconductor device according to claim 1 , comprising
a plurality of fuses, each fuse including a conductive film including silicon formed on the first insulating film with the second insulating film interposed therebetween, and
wherein some of the plurality of fuses are cut.

Assignees

• Renesas Electronics Corp

Inventors

• Kodama Eisuke

Classifications

• H10P50/263

  of silicon-containing layers · CPC title

• H10P14/69433

  the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz · CPC title

• H10P14/6905

  being a silicon carbide or silicon carbonitride and not containing oxygen, e.g. SiC or SiC:H · CPC title

• H10P14/3456

  Polycrystalline · CPC title

• H10P14/3411

  Silicon, silicon germanium or germanium · CPC title