Semiconductor structures having low resistance paths throughout a wafer
US-2015332925-A1 · Nov 19, 2015 · US
US9552994B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9552994-B2 |
| Application number | US-201314384465-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 22, 2013 |
| Priority date | Mar 19, 2012 |
| Publication date | Jan 24, 2017 |
| Grant date | Jan 24, 2017 |
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Official abstract text for this publication.
A plating apparatus 20 includes a substrate holding device 110 configured to hold and rotate the substrate 2 ; a first discharge device 30 configured to discharge a plating liquid toward the substrate 2 held on the substrate holding device 110 ; and a top plate 21 that is provided above the substrate 2 and has an opening 22 . The first discharge device 30 includes a first discharge unit 33 configured to discharge the plating liquid toward the substrate 2 , and the first discharge unit 33 is configured to be moved between a discharge position where the plating liquid is discharged and a standby position where the plating liquid is not discharged. Further, the first discharge unit 33 is configured to be overlapped with the opening 22 of the top plate 21 at the discharge position.
Opening claim text (preview).
We claim: 1. A plating apparatus of performing a plating process by supplying a plating liquid to a substrate, the plating apparatus comprising: a substrate holding device configured to hold and rotate the substrate; a first discharge device configured to discharge the plating liquid toward the substrate held by the substrate holding device; and a top plate that is provided above the substrate and has an opening configured to penetrate the top plate, wherein the first discharge device includes a first discharge unit configured to discharge the plating liquid toward the substrate, the first discharge unit is configured to be moved between a discharge position where the plating liquid is discharged and a standby position where the plating liquid is not discharged, and the first discharge unit is configured to be overlapped with the opening of the top plate at the discharge position. 2. The plating apparatus of claim 1 , wherein a heater is provided at the top plate. 3. The plating apparatus of claim 1 , wherein the opening of the top plate is formed to extend from a central portion of the top plate to an outer peripheral edge of the top plate, and the first discharge unit of the first discharge device is arranged along a radial direction of the substrate, and includes multiple discharge openings through which the plating liquid is discharged toward the substrate or includes a discharge opening extended along the radial direction of the substrate. 4. The plating apparatus of claim 1 , further comprising: a second discharge device configured to discharge a processing liquid to the substrate held by the substrate holding device, wherein the second discharge device includes a second discharge unit configured to discharge the processing liquid toward the substrate. 5. The plating apparatus of claim 4 , wherein the second discharge unit of the second discharge device is configured to be horizontally moved while discharging the processing liquid. 6. The plating apparatus of claim 4 , wherein the top plate is configured to be moved between a first position and a second position above the first position, and when the first discharge device discharges the plating liquid toward the substrate, the top plate is positioned at the first position, and when the second discharge device discharges the processing liquid toward the substrate, the top plate is positioned at the second position. 7. The plating apparatus of claim 1 , wherein the top plate includes a processing liquid discharge opening through which the processing liquid is discharged toward the substrate.
the barrier, adhesion or liner layers being on top of a main fill metal · CPC title
using a liquid · CPC title
Agitation, e.g. air introduction · CPC title
Supporting devices for articles to be coated · CPC title
Heating of the solution · CPC title
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