Method of removing work-affected layer

US9481934B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9481934-B2
Application numberUS-201313796150-A
CountryUS
Kind codeB2
Filing dateMar 12, 2013
Priority dateMay 9, 2012
Publication dateNov 1, 2016
Grant dateNov 1, 2016

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A method of removing a work-affected layer formed on the worked surface of a TiAl-based alloy (base material) by machining work, without exerting any adverse effect on the base material. The method of removing the work-affected layer includes a step of dipping a TiAl-based alloy, having a work-affected layer formed on the surface thereof by machining, in an etchant containing predetermined concentrations of hydrofluoric acid and nitric acid. Within the etchant, the concentration of the hydrofluoric acid is not less than 5 g/L and not more than 56 g/L, and the concentration of the nitric acid is selected from within a range from not less than 50 g/L to not more than 260 g/L in accordance with a combination of the concentration of the hydrofluoric acid within the etchant and the etching treatment temperature.

First claim

Opening claim text (preview).

The invention claimed is: 1. A method of removing a work-affected layer, the method comprising: a step of dipping a TiAl-based alloy, having the work-affected layer having a thickness of 5 μm to 20 μm formed on a surface thereof by machining, in an etchant consisting of predetermined concentrations of hydrofluoric acid and nitric acid, wherein the dipping is performed under conditions in which an etching temperature is within a range of 20 to 40° C., an etching time is within a range of 10 to 30 minutes, and an etching rate is within a range of 1 to 15 μm/min, and wherein within the etchant, the concentration of the hydrofluoric acid is not less than 5 g/L and not more than 56 g/L, and the concentration of the nitric acid is selected from within a range from not less than 50 g/L to not more than 260 g/L in accordance with a combination of a concentration of the hydrofluoric acid within the etchant and an etching treatment temperature. 2. The method of removing the work-affected layer according to claim 1 , wherein the TiAl-based alloy has a full lamellar structure.

Assignees

Inventors

Classifications

  • C23F1/20Primary

    for etching aluminium or alloys thereof · CPC title

  • refractory metals · CPC title

  • C23F1/16Primary

    Acidic compositions (C23F1/42 takes precedence) · CPC title

  • for etching refractory metals · CPC title

  • with acidic solutions · CPC title

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What does patent US9481934B2 cover?
A method of removing a work-affected layer formed on the worked surface of a TiAl-based alloy (base material) by machining work, without exerting any adverse effect on the base material. The method of removing the work-affected layer includes a step of dipping a TiAl-based alloy, having a work-affected layer formed on the surface thereof by machining, in an etchant containing predetermined conc…
Who is the assignee on this patent?
Mitsubishi Heavy Ind Ltd, Mitsubishi Heavy Ind Aero Engines Ltd
What technology area does this patent fall under?
Primary CPC classification C23F1/20. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Nov 01 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).