Method of detaching a substrate, device that carries out such a method and pumping device that pumps etching solution
US-2017317231-A1 · Nov 2, 2017 · US
US9481934B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9481934-B2 |
| Application number | US-201313796150-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 12, 2013 |
| Priority date | May 9, 2012 |
| Publication date | Nov 1, 2016 |
| Grant date | Nov 1, 2016 |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
A method of removing a work-affected layer formed on the worked surface of a TiAl-based alloy (base material) by machining work, without exerting any adverse effect on the base material. The method of removing the work-affected layer includes a step of dipping a TiAl-based alloy, having a work-affected layer formed on the surface thereof by machining, in an etchant containing predetermined concentrations of hydrofluoric acid and nitric acid. Within the etchant, the concentration of the hydrofluoric acid is not less than 5 g/L and not more than 56 g/L, and the concentration of the nitric acid is selected from within a range from not less than 50 g/L to not more than 260 g/L in accordance with a combination of the concentration of the hydrofluoric acid within the etchant and the etching treatment temperature.
Opening claim text (preview).
The invention claimed is: 1. A method of removing a work-affected layer, the method comprising: a step of dipping a TiAl-based alloy, having the work-affected layer having a thickness of 5 μm to 20 μm formed on a surface thereof by machining, in an etchant consisting of predetermined concentrations of hydrofluoric acid and nitric acid, wherein the dipping is performed under conditions in which an etching temperature is within a range of 20 to 40° C., an etching time is within a range of 10 to 30 minutes, and an etching rate is within a range of 1 to 15 μm/min, and wherein within the etchant, the concentration of the hydrofluoric acid is not less than 5 g/L and not more than 56 g/L, and the concentration of the nitric acid is selected from within a range from not less than 50 g/L to not more than 260 g/L in accordance with a combination of a concentration of the hydrofluoric acid within the etchant and an etching treatment temperature. 2. The method of removing the work-affected layer according to claim 1 , wherein the TiAl-based alloy has a full lamellar structure.
Related publications grouped by family.
Answers are generated from the same data shown on this page.