Methods of forming conductive patterns and methods of manufacturing semiconductor devices using the same using an etchant composition that includes phosphoric acid, nitric acid, and an assistant oxidant
US-9530670-B2 · Dec 27, 2016 · US
for etching refractory metals
for etching refractory metals · Cooperative Patent Classification (CPC)
Chemical and metallurgical processes, compounds, and materials.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | C23F1/26 |
| Official title | for etching refractory metals |
| Display label | for etching refractory metals |
| Total patents | 282 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is stable.
| Year | Patents |
|---|---|
| 2015 | 32 |
| 2016 | 31 |
| 2017 | 16 |
| 2018 | 16 |
| 2019 | 27 |
| 2020 | 25 |
| 2021 | 28 |
| 2022 | 17 |
| 2023 | 21 |
| 2024 | 30 |
| 2025 | 30 |
| 2026 | 9 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Etchant, etching method using same, and method for manufacturing semiconductor substrate product
US-2016365254-A1 · Dec 15, 2016 · US
Implant coated with net-shaped or island-shaped low-crystallized hydroxyapatite and method for coating same
US-9517187-B2 · Dec 13, 2016 · US
Atomic layer deposition of antimony oxide films
US-9514934-B2 · Dec 6, 2016 · US
Method of removing work-affected layer
US-9481934-B2 · Nov 1, 2016 · US
Removal composition for selectively removing hard mask and methods thereof
US-2016312162-A1 · Oct 27, 2016 · US
Liquid composition used in etching multilayer film containing copper and molybdenum, manufacturing method of substrate using said liquid composition, and substrate manufactured by said manufacturing method
US-9466508-B2 · Oct 11, 2016 · US
Etch chemistries for metallization in electronic devices
US-9455283-B2 · Sep 27, 2016 · US
Removal Composition for Selectively Removing Hard Mask and Methods Thereof
US-2016254182-A1 · Sep 1, 2016 · US
Dishing reducing in tungsten chemical mechanical polishing
US-2016237315-A1 · Aug 18, 2016 · US
Etching liquid composition for multilayer containing copper and molybdenum and process for etching thereof
US-2016186057-A1 · Jun 30, 2016 · US
Titanium nano-scale etching on an implant surface
US-2016184059-A1 · Jun 30, 2016 · US
Decreasing bacterial responses on nano-modified titanium
US-2016166391-A1 · Jun 16, 2016 · US
Liquid composition used in etching copper- and titanium-containing multilayer film, etching method in which said composition is used, method for manufacturing multilayer-film wiring, and substrate
US-9365934-B2 · Jun 14, 2016 · US
Etching solution for copper/molybdenum-based multilayer thin film
US-9365770-B2 · Jun 14, 2016 · US
Etchant composition and method of forming metal wire and thin film transistor array panel using the same
US-9347125-B2 · May 24, 2016 · US
Method to etch Cu/Ta/TaN selectively using dilute aqueous HF/H2SO4 solution
US-9343408-B2 · May 17, 2016 · US
Chemical Mechanical Polishing Slurry for Reducing Corrosion and Method of Use Therefor
US-2016122590-A1 · May 5, 2016 · US
Etching of semiconductor structures that include titanium-based layers
US-9330937-B2 · May 3, 2016 · US
Etchant composition and method of manufacturing metal wiring and thin film transistor substrate using the etchant
US-9293565-B2 · Mar 22, 2016 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC C23F1/26?
- CPC C23F1/26 is the Cooperative Patent Classification code for “for etching refractory metals.”
- How many patents are filed under CPC C23F1/26 (for etching refractory metals)?
- Our database includes 282 publications tagged with this CPC code.
- Is patent activity under CPC C23F1/26 growing?
- Publication counts under this code: 30 in 2024 vs 30 in 2025 (latest complete years).