Method of detaching a substrate, device that carries out such a method and pumping device that pumps etching solution

Patent metadata

Field	Value
Publication number	US-2017317231-A1
Application number	US-201515523014-A
Country	US
Kind code	A1
Filing date	Oct 27, 2015
Priority date	Oct 30, 2014
Publication date	Nov 2, 2017
Grant date	—

Abstract

A method of debonding a substrate from a layer sequence includes a) providing a composite including a wafer with the substrate, the layer sequence applied to a growth surface of the substrate, and a sacrificial layer arranged between the substrate and the layer sequence, a carrier on a cover surface of the layer sequence facing away from the substrate, and at least two separating trenches extending in the vertical direction through the layer sequence and to and/or through the sacrificial layer, b) attaching a pumping device on the composite and forming a second direct flow path between the separating trenches and the pumping device, c) introducing the composite into an etching bath with an etching solution, d) generating a pressure gradient between separating trenches and the etching solution, and e) debonding the substrate.

First claim

1 .- 18 . (canceled)

19 . A method of debonding a substrate from a layer sequence comprising:
a) providing a composite comprising
a wafer with the substrate, the layer sequence applied to a growth surface of the substrate and provided for implementation in a light-emitting diode chip, and a sacrificial layer arranged between the substrate and the layer sequence,
a carrier on a cover surface of the layer sequence facing away from the substrate, and
at least two separating trenches extending in the vertical direction through the layer sequence and to and/or through the sacrificial layer, wherein
at least one first direct flow path runs through the at least two separating trenches from a first edge point on an exposed edge of the composite to an inner point of the composite,
b) attaching a pumping device on the composite and forming a second direct flow path between the separating trenches and the pumping device, c) introducing the composite into an etching bath with an etching solution, wherein the composite is covered by the etching solution at least in places, and at least one separating trench on the edge is completely in direct contact with the etching solution, d) generating a pressure gradient between the separating trenches and the etching solution with the pumping device such that the etching solution flows through the two direct flow paths in places along the sacrificial layer, wherein the etching solution is in places in direct contact with the sacrificial layer, and e) debonding the substrate, wherein prior to step b), exactly one hole is produced in the carrier and/or the layer sequence, and the pumping device connects to the hole in step b), the hole extends completely through the carrier and the layer sequence in a vertical direction and is introduced in the carrier and in the layer sequence at a center of the composite, and at least the second flow path runs through the hole.

20 . The method according to claim 19 , wherein the at least one first direct flow path is further guided to a second edge point from the inner point of the composite through at least one of the at least two separating trenches, and the second edge point is arranged on the side of the edge opposite the first edge point with respect to the center of the composite.

21 . The method according to claim 19 , wherein the process time of steps b) to d) required to completely debond the substrate totals up to 1 hour.

22 . The method according to claim 19 , wherein the process time of steps b) to d) required to completely debond the substrate is at most half of the process time required to completely debond the substrate with a method in which no pressure gradient is generated in step c).

23 . The method according to claim 19 , wherein a negative pressure is generated in the separating trenches to generate the pressure gradient in step d).

24 . The method according to claim 19 , wherein a positive pressure is generated in the etching solution to generate the pressure gradient in step d).

25 . The method according to claim 19 , wherein the etching solution is or includes a gaseous etching medium.

26 . The method according to claim 19 , wherein each separating trench has a width of at least 0.2% and at most 50% of a diameter of the at least one hole.

27 . The method according to claim 19 , wherein the pumping device laterally connects to the composite, and the first flow path and the second flow path runs through at least 10% of the edge of the composite.

28 . A device that performs the method of claim 19 , the device comprising:
a pumping device having a vacuum pump, and at least one connecting flange connected to the vacuum pump and comprising at least one sealing element, and an etching bath with an etching solution, wherein the method comprises: a) providing a composite comprising a wafer with the substrate, the layer sequence, a sacrificial layer arranged between the substrate and the layer sequence, and at least two separating trenches extending in a vertical direction through the layer sequence and to or through the sacrificial layer, b) attaching a pumping device on the composite, c) introducing the composite into the etching bath, d) generating a pressure gradient between the separating trenches and the etching solution with the pumping device, and e) debonding the substrate, the sealing element has a good chemical resistance toward the material of the etching solution, and the vacuum pump is configured to generate a pressure of at most 10 3 Pa, in the volume generated by the separating trenches.

29 . The device according to claim 28 , wherein the connecting flange comprises two segments, wherein
each segment comprises a recess, wherein at least one recess has a circular-segment-type shape in a top view, the two segments connect with one another in a mechanically releasable manner on their connection surfaces comprising the respective recess, and the connecting flange is configured to receive the composite partially between the two segments in the two recesses and to seal it toward the outside.

30 . The device according to claim 29 , wherein the two segments are configured mirror-symmetrical to one another within the manufacturing tolerances.

31 . The device according to claim 28 , wherein the carrier and the layer sequence comprise exactly one hole, and the hole extends completely through the carrier and the layer sequence in a vertical direction and the connecting flange has a circular-type design in a top view and is configured to completely enclose the hole laterally with the sealing element and seal it toward the outside.

32 . A pumping device that pumps etching solution in the method of claim 19 , comprising:
a vacuum pump and a connecting flange connected to the vacuum pump via a vacuum hose, wherein the connecting flange comprises a depression having a circular-segment-type cross section, the depression extends entirely to an exposed side surface of the connecting flange, wherein the chord of the circular-segment-type cross section is part of the side surface and the connecting flange comprises a sealing element in the depression attached to the side surface.

33 . The pumping device according to claim 32 , wherein the connecting flange comprises two segments, wherein
the depression is arranged between the two segments, each segment comprises a recess, the recesses of the segments together form the depression, and each segment comprises the sealing element attached to the side surface.

34 . The pumping device according to claim 33 , wherein the two segments are configured mirror-symmetrical to one another within the manufacturing tolerances and the recesses in the segments have circular-segment-type shape in a top view.

35 . The pumping device according to claim 32 , wherein the connecting flange is formed integrally and with of a synthetic material.

Assignees

• Osram Opto Semiconductors Gmbh

Inventors

• Sundgren Petrus
• Englhard Marco
• Behringer Martin Rudolf
• Klemp Christoph

Classifications

• C23F1/20

  for etching aluminium or alloys thereof · CPC title

• H10P72/0428

  Apparatus for mechanical treatment or grinding or cutting · CPC title

• H10P72/0426 Primary

  with the semiconductor substrates being dipped in baths or vessels · CPC title

• H10W72/0198

  batch processes · CPC title

• H01L24/95

  Electricity · mapped topic