Structure and method for E-beam in-chip overlay mark

Patent metadata

Field	Value
Publication number	US-9230867-B2
Application number	US-201414286433-A
Country	US
Kind code	B2
Filing date	May 23, 2014
Priority date	Dec 8, 2011
Publication date	Jan 5, 2016
Grant date	Jan 5, 2016

Abstract

The present disclosure provides an integrated circuit structure that includes a semiconductor substrate having a first region and a second region having an area less than about 10 micron×10 micron; a first material layer over the semiconductor substrate and patterned to have a first circuit feature in the first region and a first mark in the second region; and a second material layer over the first material layer and patterned to have a second circuit feature in the first region and a second mark in the second region. The first mark includes first mark features oriented in a first direction, and second mark features oriented in a second direction perpendicular to the first direction. The second mark includes third mark features oriented in the first direction, and fourth mark features oriented in the second direction.

First claim

What is claimed is:

1. A method comprising:
forming a first overlay mark in a first region of a substrate, wherein the first overlay mark has a top surface facing away from the substrate;
forming a second overlay mark in the first region of the substrate, wherein the second overlay mark overlaps a first portion of the top surface of the first overlay mark such that a second portion of the top surface of the first overlay mark is exposed; and
determining an overlay shift defined as (D 1 −D 2 )/2,
wherein the first overlay mark has a first width measured between a first edge and a second edge of the first overlay mark,
wherein the second overlay mark has a second width measured between a third edge and a fourth edge of the second overlay mark, and
wherein D 1 is a first distance defined between the first edge and the third edge, and wherein D 2 is a second distance defined between the second edge and the fourth edge.

2. The method of claim 1 , further comprising detecting a first overlay signal from the first overlay mark and a second overlay signal from the second overlay mark.

3. The method of claim 1 , wherein forming the first overlay mark in the first region of the substrate includes forming a first circuit feature in a second region of the substrate; and
wherein forming the second overlay mark in the second region of the substrate includes forming a second circuit feature in the second region of the substrate.

4. The method of claim 1 , wherein the first and second overlay marks are formed of the same material.

5. The method of claim 1 , further comprising forming a third overlay mark over the second overlay mark.

6. A method comprising:
forming a first overlay mark of a first material in a region of a substrate, wherein the first overlay mark has a first width measured between a first edge and a second edge of the first overlay mark;
forming a second overlay mark of a second material in the region of the substrate, wherein the second overlay mark has a second width measured between a third edge and a fourth edge of the second overlay mark; and
determining an overlay shift defined as (D 1 −D 2 )/2, wherein D 1 is a first distance defined between the first edge and the third edge, and wherein D 2 is a second distance defined between the second edge and the fourth edge.

7. The method of claim 6 , wherein the first overlay mark is an active region in the substrate, and
wherein the second overlay mark is one of a gate stack and a doped region.

8. The method of claim 6 , further comprising forming a first shallow trench isolation feature and a second shallow trench isolation feature in the substrate, wherein the first overlay mark extends from the first shallow trench isolation feature to the second shallow trench isolation feature.

9. The method of claim 6 , wherein forming the second overlay mark of the second material in the region of the substrate includes performing an implantation process to form the second over layer mark.

10. The method of claim 6 , wherein forming the second overlay mark of the second material in the region of the substrate includes forming the second overlay mark over the first overlay mark such that a portion of the first overlay mark is exposed after the second overlay mark has been formed.

11. The method of claim 10 , wherein the portion of the first overlay mark includes a top surface of the first overly mark.

12. The method of claim 6 , wherein the first and second overlay marks are embedded in the substrate.

13. The method of claim 6 , wherein one of the first and second materials includes a metal material.

14. A method, comprising:
patterning a substrate to form a first circuit feature in a first region and a first overlay feature in a second region;
patterning a material layer on the substrate to form a second circuit feature in the first region and a second overlay feature in the second region;
directing an electron beam to the second region of the substrate; and
detecting a first overlay signal from the first overlay feature and a second overlay signal from the second overlay feature for overlay analysis.

15. The method of claim 14 , wherein the detecting a first overlay signal from the first overlay feature and a second overlay signal from the second overlay feature includes the first and second electron signals of secondary electrons.

16. The method of claim 14 , wherein
the first and second overlay features are oriented in a first direction; and
the directing an electron beam to the first region of the substrate includes scanning the electron beam in a second direction perpendicular to the first direction.

17. The method of claim 14 , wherein
patterning a substrate to form a first circuit feature in a first region and a first overlay feature in a second region includes forming shallow trench isolation features to define a first active region as the first circuit feature and a second active region as the first overlay feature;
the material layer is the substrate of a semiconductor material; and
the patterning a material layer to form a second circuit feature in the first region and a second overlay feature in the second region includes performing an ion implantation to the substrate to form a first doped region as the second circuit feature and a second doped region as the second overlay feature.

18. The method of claim 14 , wherein the patterning a substrate to form a first circuit feature in a first region and a first overlay feature in a second region includes:
forming an underlying material layer on the substrate; and
selectively etching the underlying material to form the first circuit feature and the first overlay feature.

19. The method of claim 14 , wherein the first overlay feature includes a surface and the second overlay feature overlaps a first portion of the surface while a second portion of the surfaces remains exposed.

20. The method of claim 1 , wherein the first overlay mark is an active region in the substrate, and
wherein the second overlay mark is a gate stack.

Assignees

• Taiwan Semiconductor Mfg

Inventors

• Cheng Dong-Hsu
• Tsai Ming-Ho
• Huang Chih-Chung
• Chen Yung-Hsiang
• Chen Jyun-Hong

Classifications

• H10P74/203 Primary

  Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects · CPC title

• G03F7/70633 Primary

  Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching · CPC title

• H01L22/12 Primary

  Electricity · mapped topic

• H10P76/204

  of organic photoresist masks · CPC title