High speed precessionally switched magnetic logic

Patent metadata

Field	Value
Publication number	US-8988109-B2
Application number	US-201213678877-A
Country	US
Kind code	B2
Filing date	Nov 16, 2012
Priority date	Nov 16, 2012
Publication date	Mar 24, 2015
Grant date	Mar 24, 2015

Abstract

High speed precessionally switched magnetic logic devices and architectures are described. In a first example, a magnetic logic device includes an input electrode having a first nanomagnet and an output electrode having a second nanomagnet. The spins of the second nanomagnet are non-collinear with the spins of the first nanomagnet. A channel region and corresponding ground electrode are disposed between the input and output electrodes. In a second example, a magnetic logic device includes an input electrode having an in-plane nanomagnet and an output electrode having a perpendicular magnetic anisotropy (PMA) magnet. A channel region and corresponding ground electrode are disposed between the input and output electrodes.

First claim

What is claimed is:

1. A magnetic logic device, comprising:
an input electrode comprising a first nanomagnet;
an output electrode comprising a second nanomagnet, the spins of the second nanomagnet non-collinear with the spins of the first nanomagnet; and
a channel region and corresponding ground electrode disposed between the input and output electrodes, the channel region having a channel direction, wherein the first nanomagnet is tilted at approximately 45 degrees in a first direction with respect to the channel direction, and the second nanomagnet is tilted at approximately 45 degrees in a second direction with respect to the channel direction, and wherein the first direction is opposite to the second direction.

2. The magnetic logic device of claim 1 , further comprising:
a metal ground line coupled to the ground electrode.

3. The magnetic logic device of claim 1 , further comprising:
a supply voltage plane coupled with one or both of the first and second electrodes.

4. The magnetic logic device of claim 1 , wherein one or both of the nanomagnets comprises an elemental material selected from the group consisting of iron (Fe), cobalt (Co), nickel (Ni), and gadolinium (Gd).

5. The magnetic logic device of claim 1 , wherein one or both of the nanomagnets comprises an alloy material selected from the group consisting of cobalt iron (Co x Fe y ), nickel cobalt (Ni x Co y ), nickel iron (Ni x Fe y ), cobalt iron boron (Co x Fe y B z ), samarium cobalt (Sm x Co y ), and neodymium iron boron (Nd x Fe y B z ).

6. The magnetic logic device of claim 1 , wherein one or both of the nanomagnets comprises a Heusler Alloy material selected from the group consisting of copper manganese aluminum (Cu 2 MnAl), copper manganese indium (Cu 2 MnIn), copper manganese tin (Cu 2 MnSn), copper iron silicon (Co 2 FeSi), cobalt iron aluminum (Co 2 FeAl), and gallium manganese (GaMn).

7. The magnetic logic device of claim 1 , wherein the channel region comprises a material selected from the group consisting of copper (Cu), aluminum (Al), silver (Ag), gold (Au), a monolayer of graphene, multi-layered graphene, and silicon, germanium, or silicon germanium alloys thereof.

8. The magnetic logic device of claim 1 , further comprising:
a spin filter dielectric layer disposed adjacent to at least a portion of the channel region.

9. The magnetic logic device of claim 8 , wherein the spin filter dielectric layer comprises a material selected from the group consisting of magnesium oxide (MgO), aluminum oxide (Al 2 O 3 ), mono or multilayered graphene (C), and europium oxide (EuO).

10. A method of operating a magnetic logic device, the method comprising:
providing current having a net spin direction from an input electrode comprising a first nanomagnet to a ground channel region of the device; and
receiving the current at an output electrode comprising a second nanomagnet to align the spins of the second nanomagnet, the spins of the second nanomagnet non-collinear with the spins of the first nanomagnet, the ground channel region having a channel direction, wherein the first nanomagnet is tilted at approximately 45 degrees in a first direction with respect to the channel direction, and the second nanomagnet is tilted at approximately 45 degrees in a second direction with respect to the channel direction, and wherein the first direction is opposite to the second direction.

11. The method of claim 10 , wherein providing the current from the input electrode and receiving the current at the output electrode is for precessionally switching the device.

12. The method of claim 11 , wherein initiation of the precessional switching of the device comprises using non-zero spin torque.

13. The method of claim 10 , wherein providing the current from the input electrode and receiving the current at the output electrode comprises non-inversion gating of the channel region.

14. The method of claim 13 , wherein the non-inversion gating comprising using a negative supply voltage.

15. The method of claim 10 , wherein providing the current from the input electrode and receiving the current at the output electrode comprises inversion gating of the channel region.

16. The method of claim 15 , wherein the inversion gating comprising using a positive supply voltage.

17. A magnetic logic device, comprising:
an input electrode comprising an in-plane nanomagnet;
an output electrode comprising a perpendicular magnetic anisotropy (PMA) magnet; and
a channel region and corresponding ground electrode disposed between the input and output electrodes, wherein the in-plane nanomagnet is in-plane with the channel region, and the PMA magnet is out of plane with the channel region.

18. The magnetic logic device of claim 17 , further comprising:
a metal ground line coupled to the ground electrode.

19. The magnetic logic device of claim 17 , further comprising:
a supply voltage plane coupled with one or both of the first and second electrodes.

20. The magnetic logic device of claim 17 , wherein one or both of the in-plane nanomagnet and the PMA magnet comprises an elemental material selected from the group consisting of iron (Fe), cobalt (Co), nickel (Ni), gadolinium (Gd), and atomic multilayers thereof.

21. The magnetic logic device of claim 20 , wherein iron (Fe), cobalt (Co), nickel (Ni), or gadolinium (Gd) atomic multilayers are used, and are interspersed with nonmagnetic interlayers comprising palladium (Pd) or platinum (Pt).

22. The magnetic logic device of claim 17 , wherein one or both of the in-plane nanomagnet and the PMA magnet comprises an alloy material selected from the group consisting of cobalt iron (Co x Fe y ), nickel cobalt (Ni x Co y ), nickel iron (Ni x Fe y ), cobalt iron boron (Co x Fe y B z ), samarium cobalt (Sm x Co y ), and neodymium iron boron (Nd x Fe y B z ).

23. The magnetic logic device of claim 17 , wherein one or both of the in-plane nanomagnet and the PMA magnet comprises a Heusler Alloy material selected from the group consisting of copper manganese aluminum (Cu 2 MnAl), copper manganese indium (Cu 2 MnIn), copper manganese tin (Cu 2 MnSn), copper iron silicon (Co 2 FeSi), cobalt iron aluminum (Co 2 FeAl), and gallium manganese (GaMn).

24. The magnetic logic device of claim 17 , further comprising:
a spin filter dielectric layer disposed adjacent to at least a portion of the channel region.

25. The magnetic logic device of claim 24 , wherein the spin filter dielectric layer comprises a material selected from the group consisting of magnesium oxide (MgO), aluminum oxide (Al 2 O 3 ), and europium oxide (EuO).

26. A method of operating a magnetic logic device, the method comprising:
providing current having a net spin direction from an input electrode comprising an in-plane nanomagnet to a ground channel region of the device; and
receiving the current at an output electrode comprising a perpendicular magnetic anisotropy (PMA) magnet to align the spins of the PMA magnet, wherein the in-plane nanomagnet is in-plane with the ground channel region, and the PMA magnet is out of plane with the ground channel region.

27. The method of claim 26 , wherein providing the current from the input electrode and receiving the current at the output electrode precessionally switches the device.

28. The method of claim 26 , wherein providing the current from the input electrode and receiving the curren

Assignees

• Manipatruni Sasikanth
• Nikonov Dmitri E
• Young Ian A
• Intel Corp

Inventors

• Manipatruni Sasikanth
• Nikonov Dmitri E
• Young Ian A

Classifications

• H03K19/16 Primary

  using saturable magnetic devices · CPC title

• G11C11/16

  using elements in which the storage effect is based on magnetic spin effect · CPC title

• H01F10/3268

  the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn · CPC title

• G11C11/161

  details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell · CPC title

• H03K17/80

  using non-linear magnetic devices; using non-linear dielectric devices {(H03K17/95, H03K17/97 take precedence)} · CPC title