Spin current generation with nano-oscillator

Patent metadata

Field	Value
Publication number	US-2016359458-A1
Application number	US-201615241169-A
Country	US
Kind code	A1
Filing date	Aug 19, 2016
Priority date	Nov 13, 2014
Publication date	Dec 8, 2016
Grant date	—

Abstract

A device including a spin channel to transport a spin current, a nano-oscillator, and a magnetoresistive device that receives the spin current from the nano-oscillator. The nano-oscillator includes a magnetization state that oscillates between a first state and a second state in response to an input voltage or current. The oscillation of the nano-oscillator may induce the spin current within the spin channel. The magnetoresistive device includes a magnetization state that is set based at least in part on the received spin current.

First claim

What is claimed is:

1 . A method comprising:
applying DC input voltage or current to a nano-oscillator to oscillate a magnetization state of the nano-oscillator between a first state and a second state and induce a spin current in a spin channel coupled to the nano-oscillator; applying a gate voltage or current to the spin-channel to amplify an input current received by the spin channel with the spin current; and outputting the amplified current.

2 . The method of claim 1 , wherein applying the DC input voltage or current further comprises exciting magnetization dynamics in the nano-oscillator, wherein the oscillation of the nano-oscillator between the first state and the second state induces the spin current, and wherein the spin current drifts through the spin channel.

3 . The method of claim 2 , wherein the exciting magnetization dynamics is further based on one or more of voltage-controlled magnetic anisotropy (VCMA), strain induced magnetization switching, or exchange biasing magnetization switching.

4 . The method of claim 1 , wherein the nano-oscillator comprises a magnetoresistive device, the magnetoresistive device comprising one of:
a single magnetic layer; or multiple layers including a fixed magnetic layer, a free magnetic layer, and a non-magnetic layer.

5 . The method of claim 4 , wherein the thickness of the single magnetic layer or the free magnetic layer is between approximately 0.8 nanometers and approximately 6.0 nanometers.

6 . A device comprising:
a nano-oscillator; a spin channel coupled to the nano-oscillator, the spin channel configured to receive an input current and output amplified current; a first source configured to apply DC input voltage or current to the nano-oscillator to oscillate a magnetization state of the nano-oscillator between a first state and a second state and induce a spin current in the spin channel; and a second source configured to apply a gate voltage or current to the spin-channel to amplify the input current received by the spin channel with the spin current to generate the amplified current.

7 . The device of claim 6 , wherein the nano-oscillator comprises a magnetoresistive device, the magnetoresistive device comprising one of:
a single magnetic layer; or multiple layers including a fixed magnetic layer, a free magnetic layer, and a non-magnetic layer.

8 . The device of claim 7 , wherein the thickness of the single magnetic layer or the free magnetic layer is between approximately 0.8 nanometers and approximately 6.0 nanometers.

9 . The device of claim 6 , wherein the oscillation of the nano-oscillator between the first state and the second state is further based on one or more of voltage-controlled magnetic anisotropy (VCMA), strain induced magnetization switching, or exchange biasing magnetization switching.

10 . The device of claim 6 , wherein the oscillation of the nano-oscillator between the first state and the second state induces the spin current, wherein the spin current drifts through the spin channel from the nano-oscillator.

Assignees

• Univ Minnesota

Inventors

• Wang Jian-Ping
• Jamali Mahdi

Classifications

• H03K19/16

  using saturable magnetic devices · CPC title

• H03B15/006 Primary

  using spin transfer effects or giant magnetoresistance · CPC title

• H01F10/3254

  the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ] · CPC title

• G11B5/3909

  Arrangements using a magnetic tunnel junction · CPC title

• G11C11/1673

  Reading or sensing circuits or methods · CPC title