Strain gauge
US-11796404-B2 · Oct 24, 2023 · US
US2023109237A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2023109237-A1 |
| Application number | US-202117906081-A |
| Country | US |
| Kind code | A1 |
| Filing date | Mar 18, 2021 |
| Priority date | Mar 24, 2020 |
| Publication date | Apr 6, 2023 |
| Grant date | — |
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A strain gauge includes a flexible resin substrate and a resistor formed of material including at least one of chromium or nickel, the resistor being situated on one side of the substrate. The strain gauge includes a conductive layer formed on the other side of the substrate.
Opening claim text (preview).
1 . A strain gauge comprising: a flexible resin substrate; a resistor formed of material including at least one of chromium or nickel, the resistor being situated on one side of the substrate; and a conductive layer formed on the other side of the substrate. 2 . The strain gauge according to claim 1 , further comprising an insulating layer formed of an inorganic material, the insulating layer being situated on the other side of the substrate, wherein the conductive layer is laminated on an opposite side of the insulating layer from the substrate. 3 . The strain gauge according to claim 1 , further comprising: a second conductive layer formed on the one side of the substrate; and a second insulating layer formed of an inorganic material, the second insulating layer being laminated on an opposite side of the second conductive layer from the substrate, wherein the resistor is laminated on an opposite side of the second insulating layer from the second conductive layer. 4 . The strain gauge according to claim 3 , further comprising: a third insulating layer formed of the inorganic material, the third insulating layer being situated on the one side of the substrate, wherein the second conductive layer is laminated on an opposite side of the third insulating layer from the substrate. 5 . The strain gauge according to claim 1 , further comprising: an insulating layer formed of an inorganic material, the insulating layer being laminated on an opposite side of the conductive layer from the substrate; a second conductive layer formed on the one side of the substrate; and a second insulating layer formed of the inorganic material, the second insulating layer being laminated on an opposite side of the second conductive layer from the substrate. 6 . The strain gauge according to claim 5 , wherein the conductive layer and the second conductive layer are formed of a same metal to have a same thickness, and wherein the insulating layer and the second insulating layer are each formed of an oxide of the metal to have a same thickness. 7 . The strain gauge according to claim 1 , further comprising a functional layer formed of a metal, an alloy, or a metal compound, the functional layer being situated on a substrate side of the resistor, and the functional layer contacting the resistor. 8 . The strain gauge according to claim 1 , further comprising: a functional layer formed of a metal, an alloy, or a metal compound, the functional layer being situated on a substrate side of the resistor, and the functional layer contacting the resistor and the substrate; and a second functional layer formed of the metal, the alloy, or the metal compound, the second functional layer being situated on the substrate side of the conductive layer, and the second functional layer contacting the conductive layer and the substrate, wherein the functional layer and the second functional layer are formed of a same material to have a same thickness, and wherein the resistor and the conductive layer are formed of a same material to have a same thickness. 9 . The strain gauge according to claim 1 , wherein the resistor is formed of a film that includes Cr, CrN, and Cr 2 N, a main component of the film being alpha-chromium. 10 . The strain gauge according to claim 9 , wherein CrN and Cr 2 N included in the resistor are at 20% by weight or less. 11 . The strain gauge according to claim 10 , wherein a percentage of Cr 2 N in the CrN and Cr 2 N is greater than or equal to 80% and less than 90%.
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Reactive sputtering · CPC title
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