Strain gauge including improved stability of temperature coefficient of resistance and gauge factor

Patent metadata

Field	Value
Publication number	US-11262257-B2
Application number	US-201816757873-A
Country	US
Kind code	B2
Filing date	Oct 30, 2018
Priority date	Oct 31, 2017
Publication date	Mar 1, 2022
Grant date	Mar 1, 2022

Abstract

A strain gauge includes a substrate formed of resin and having flexibility and a functional layer formed of a metal, an alloy, or a metal compound, directly on one surface of the substrate. The strain gauge includes a resistor formed as a film that contains Cr, CrN, and Cr2N and into which an element contained in the functional layer is diffused. The resistor is provided on one surface of the functional layer. A first substance having a function of controlling growth of crystal grains as a main component of the resistor, is added to the resistor.

First claim

The invention claimed is:

1. A strain gauge comprising;
a substrate formed of resin and having flexibility;
a functional layer formed from a metal, an alloy, or a metal compound, directly on one surface of the substrate; and
a resistor formed as a film that contains Cr, CrN, and Cr 2 N and into which the metal, the alloy, or the metal compound contained in the functional layer is diffused, the resistor being provided on one surface of the functional layer,
wherein a first substance having a function of controlling growth of crystal grains as a main component of the resistor, is added to the resistor.

2. The strain gauge as claimed in claim 1 , wherein the functional layer contains one or more species of metals selected from among a group consisting of Cr, Ti, V, Nb, Ta, Ni, Y, Zr, Hf, Si, C, Zn, Cu, Bi, Fe, Mo, W, Ru, Rh, Re, Os, Ir, Pt, Pd, Ag, Au, Co, Mn, and Al; an alloy of any of the metals in the group; or a compound of any of the metals in the group.

3. The strain gauge as claimed in claim 2 , wherein the functional layer contains one or more species of metals selected from among a group consisting of Cr, V, Nb, Ta, Ni, Y, Hf, C, Zn, Bi, Fe, Mo, W, Ru, Rh, Re, Os, Ir, Pt, Pd, Ag, Au, Co, and Mn; an alloy of any of the metals in the group; or a compound of any of the metals in the group.

4. The strain gauge as claimed in claim 2 , wherein the functional layer contains one species of metal compound selected from among a group consisting of TiN, TaN, Si 3 N 4 , TiO 2 , Ta 2 O 5 , and SiO 2 .

5. The strain gauge as claimed in claim 4 , wherein the functional layer contains one species of metal compound selected from among a group consisting of TiN, TaN, Si 3 N 4 , and Ta 2 O 5 .

6. The strain gauge as claimed in claim 2 , wherein the functional layer contains one species of alloy selected from among a group consisting of FeCr, TiAl, FeNi, NiCr, and CrCu.

7. The strain gauge as claimed in claim 1 , wherein the functional layer has a function of preventing oxidation of the resistor, a function of controlling movement of oxygen and moisture contained in the substrate toward the resistor, and/or a function of improving adhesion between the substrate and the resistor.

8. The strain gauge as claimed in claim 1 , wherein the functional layer is patterned into a same planar shape as the resistor.

9. The strain gauge as claimed in claim 1 , wherein a thickness of the functional layer is 1 nm to 100 nm.

10. The strain gauge as claimed in claim 1 , wherein a second substance having a function of preventing crystal grains as a main component of the resistor from cohering, is added to the resistor.

11. The strain gauge as claimed in claim 1 , further comprising:
an oxidation impeding layer formed to cover a non-oxidized surface corresponding to an upper surface of the resistor, and to expose a side surface of the resistor.

12. A strain gauge comprising:
a substrate formed of resin and having flexibility;
a functional layer formed from a metal, an alloy, or a metal compound, directly on one surface of the substrate; and
a resistor formed as a film that contains Cr, CrN, and Cr 2 N and into which the metal, the alloy, or the metal compound contained in the functional layer is diffused, the resistor being provided on one surface of the functional layer,
wherein a first substance having a function of controlling growth of crystal grains as a main component of the resistor, is added to the resistor.

Assignees

• Minebea Mitsumi Inc

Inventors

• Takata Shintaro
• Toda Shinya
• Asakawa Toshiaki
• Maeno Keiki

Classifications

• G01L1/2281

  for temperature variations · CPC title

• G01B7/20 Primary

  formed by printed-circuit technique · CPC title

• G01L1/2293 Primary

  of the semi-conductor type · CPC title