Diagnostic device, semiconductor manufacturing equipment system, semiconductor equipment manufacturing system, and diagnostic method
US-2024321608-A1 · Sep 26, 2024 · US
US2023103165A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2023103165-A1 |
| Application number | US-202218071444-A |
| Country | US |
| Kind code | A1 |
| Filing date | Nov 29, 2022 |
| Priority date | Mar 6, 2020 |
| Publication date | Mar 30, 2023 |
| Grant date | — |
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Capacitive sensors and capacitive sensing data integration for plasma chamber condition monitoring are described. In an example, a plasma chamber monitoring system includes a plurality of capacitive sensors, a capacitance digital converter, and an applied process server coupled to the capacitance digital converter, the applied process server including a system software. The capacitance digital converter includes an isolation interface coupled to the plurality of capacitive sensors, a power supply coupled to the isolation interface, a field-programmable gate-array firmware coupled to the isolation interface, and an application-specific integrated circuit coupled to the field-programmable gate-array firmware.
Opening claim text (preview).
What is claimed is: 1 . An interconnect for a plasma chamber monitoring system, the interconnect comprising: a first connector for coupling to a capacitance digital converter of a capacitive sensor module; a second connector for coupling to an electronic and an external power supply; a shielded cable coupled to and between the first connector and the second connector, the shielded cable comprising: a shielding metal for physically connecting the interconnect to a frame of a plasma chamber; a power supply line housed within the shielding metal; a ground line housed within the shielding metal; and one or more communication lines housed within the shielding metal. 2 . The interconnect of claim 1 , wherein the power supply line housed within the shielding metal is a 3-4 Volt power supply line. 3 . The interconnect of claim 1 , wherein each of the one or more communication lines housed within the shielding metal is or includes an inter-integrated circuit bus. 4 . The interconnect of claim 1 , wherein the ground line housed within the shielding metal provides a common ground for the capacitive sensor module and the electronic. 5 . The interconnect of claim 1 , wherein the one or more communication lines housed within the shielding metal synchronize sensor data clocking. 6 . A method of integrating data for plasma chamber condition monitoring, the method comprising: streaming data from a capacitive sensor module to a data server, the data comprising capacitance data and temperature data; collecting the data on an applied process server; correlating the data to one or more process recipe operations; and synchronizing the capacitive sensor module with the one or more process recipe operations. 7 . The method of claim 6 , further comprising: subsequent to collecting the data on the applied process server and prior to correlating the data to one or more process recipe operations, performing data processing and parametric extraction. 8 . The method of claim 7 , wherein performing the data processing comprises filtering the data and denoising the data. 9 . The method of claim 8 , wherein filtering the data and denoising the data comprises using a moving average approach. 10 . The method of claim 7 , wherein performing the data processing and the parametric extraction comprises regression modeling of the data. 11 . The method of claim 6 , further comprising: monitoring one or more parameters of the one or more process recipe operations with the capacitive sensor module. 12 . The method of claim 11 , further comprising: determining a clean/dirty status for a plasma chamber based on the monitoring of the one or more parameters of the one or more process recipe operations with the capacitive sensor module. 13 . A system, comprising: a plasma chamber; and a plasma chamber monitoring system coupled to the plasma chamber, the plasma chamber monitoring system comprising an interconnect, the interconnect comprising: a first connector for coupling to a capacitance digital converter of a capacitive sensor module; a second connector for coupling to an electronic and an external power supply; and a shielded cable coupled to and between the first connector and the second connector, the shielded cable comprising: a shielding metal for physically connecting the interconnect to a frame of a plasma chamber; a power supply line housed within the shielding metal; a ground line housed within the shielding metal; and one or more communication lines housed within the shielding metal. 14 . The system of claim 13 , wherein the power supply line housed within the shielding metal is a 3-4 Volt power supply line. 15 . The system of claim 13 , wherein each of the one or more communication lines housed within the shielding metal is or includes an inter-integrated circuit bus. 16 . The system of claim 13 , wherein the ground line housed within the shielding metal provides a common ground for the capacitive sensor module and the electronic. 17 . The system of claim 13 , wherein the one or more communication lines housed within the shielding metal synchronize sensor data clocking.
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