Electrochemical doping of thin metal layers employing underpotential deposition and thermal treatment
US-10501846-B2 · Dec 10, 2019 · US
Zincating and doping of metal liner for liner passivation and adhesion improvement
US2021166971A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2021166971-A1 |
| Application number | US-201917257207-A |
| Country | US |
| Kind code | A1 |
| Filing date | Jun 28, 2019 |
| Priority date | Jun 30, 2018 |
| Publication date | Jun 3, 2021 |
| Grant date | — |
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Abstract
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A method for forming a self-forming barrier in a feature of a substrate is provided, including the following operations: depositing a metallic liner in the feature of the substrate, the metallic liner being deposited over a dielectric of the substrate; depositing a zinc-containing precursor over the metallic liner; performing a thermal soak of the substrate; repeating the depositing of the zinc-containing precursor and the thermal soak of the substrate for a predefined number of cycles; wherein the method forms a zinc-containing barrier layer at an interface between the metallic liner and the dielectric.
First claim
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1 . A method for forming a self-forming barrier in a feature of a substrate, comprising: depositing a metallic liner in the feature of the substrate, the metallic liner being deposited over a dielectric of the substrate; depositing a zinc-containing precursor over the metallic liner; performing a thermal soak of the substrate; repeating the depositing of the zinc-containing precursor and the thermal soak of the substrate for a predefined number of cycles; wherein the method forms a zinc-containing barrier layer at an interface between the metallic liner and the dielectric. 2 . The method of claim 1 , wherein the metallic liner consists of ruthenium. 3 . The method of claim 1 , wherein the metallic liner consists of cobalt. 4 . The method of claim 1 , wherein the feature is a via. 5 . The method of claim 1 , wherein the feature is an interconnect. 6 . The method of claim 1 , wherein the zinc-containing precursor is diethyl zinc. 7 . The method of claim 1 , wherein depositing the zinc-containing precursor is performed by a chemical vapor deposition process. 8 . The method of claim 1 , wherein the thermal soak is performed at a temperature of about 180 to 400 C. 9 . The method of claim 1 , further comprising: after the repeating for the predefined number of cycles, then depositing a conductor in the feature of the substrate. 10 . The method of claim 9 , wherein the conductor is copper. 11 . A method for forming a self-forming barrier in a feature of a substrate, comprising: depositing a metallic liner in the feature of the substrate, the metallic liner being deposited over a dielectric of the substrate; depositing an indium-containing precursor over the metallic liner; performing a thermal soak of the substrate; repeating the depositing of the indium-containing precursor and the thermal soak of the substrate for a predefined number of cycles; wherein the method forms a indium-containing barrier layer at an interface between the metallic liner and the dielectric. 12 . The method of claim 11 , wherein the metallic liner consists of ruthenium. 13 . The method of claim 11 , wherein the metallic liner consists of cobalt. 14 . The method of claim 11 , wherein the feature is a via. 15 . The method of claim 11 , wherein the feature is an interconnect. 16 . The method of claim 11 , wherein the indium-containing precursor is trimethyl indium. 17 . The method of claim 11 , wherein depositing the indium-containing precursor is performed by a chemical vapor deposition process. 18 . The method of claim 11 , wherein the thermal soak is performed at a temperature of about 180 to 400 C. 19 . The method of claim 11 , further comprising: after the repeating for the predefined number of cycles, then depositing a conductor in the feature of the substrate. 20 . The method of claim 19 , wherein the conductor is copper.
Assignees
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Classifications
by formation methods other than physical vapour deposition [PVD], chemical vapour deposition [CVD] or liquid deposition · CPC title
by diffusing metallic dopants to react with dielectrics · CPC title
by selectively depositing, e.g. by using selective CVD or plating · CPC title
in via holes or trenches · CPC title
- H10W20/033Primary
in openings in dielectrics · CPC title
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- What does patent US2021166971A1 cover?
- A method for forming a self-forming barrier in a feature of a substrate is provided, including the following operations: depositing a metallic liner in the feature of the substrate, the metallic liner being deposited over a dielectric of the substrate; depositing a zinc-containing precursor over the metallic liner; performing a thermal soak of the substrate; repeating the depositing of the zinc…
- Who is the assignee on this patent?
- Lam Res Corp
- What technology area does this patent fall under?
- Primary CPC classification H10W20/033. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Thu Jun 03 2021 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 4 related publications on this page (citations in our corpus or others sharing the same primary CPC).