Interconnect structure and method of forming the same

Patent metadata

Field	Value
Publication number	US-9385080-B2
Application number	US-201414461285-A
Country	US
Kind code	B2
Filing date	Aug 15, 2014
Priority date	Aug 15, 2014
Publication date	Jul 5, 2016
Grant date	Jul 5, 2016

Abstract

An interconnect structure and a method of forming an interconnect structure are disclosed. The interconnect structure includes a contact layer over a substrate; a dielectric layer over the contact layer, wherein the dielectric layer has an opening, the opening exposing a portion of the contact layer; a silicide layer over the exposed portion of the contact layer; a barrier layer along sidewalls of the opening; an alloy layer over the barrier layer; a glue layer over the alloy layer; and a conductive plug over the glue layer.

First claim

What is claimed is:

1. An interconnect structure, comprising:
a contact layer over a substrate;
a dielectric layer over the contact layer, wherein the dielectric layer has an opening, the opening comprising an exposed portion of the contact layer;
a silicide layer over the exposed portion of the contact layer;
a barrier layer along sidewalls of the opening;
an alloy layer over the barrier layer, the barrier layer interposed between the alloy layer and the dielectric layer, the alloy layer over and in contact with the silicide layer;
a glue layer over the alloy layer; and
a conductive plug over the glue layer;
wherein:
the barrier layer comprises manganese oxide (MnOx) or manganese silicon oxide (MnSiyOz);
the alloy layer comprises a main metal and an additive metal; and
a ratio of the additive metal to the main metal ranges from about 0.01 atomic percent (at %) to about 25 atomic percent (at %).

2. The interconnect structure of claim 1 , wherein the contact layer comprises silicon, silicon germanium, silicon phosphide, silicon carbide, or a combination thereof.

3. The interconnect structure of claim 1 , wherein the silicide layer comprises nickel silicide, cobalt silicide, titanium silicide, tungsten silicide, or a combination thereof.

4. The interconnect structure of claim 1 , wherein the silicide layer has a thickness in a range from about 30 angstroms (Å) to about 300 angstroms (Å).

5. The interconnect structure of claim 1 , wherein the barrier layer has a thickness in a range from about 3 angstroms (Å) to about 30 angstroms (Å).

6. The interconnect structure of claim 1 , wherein the main metal comprises nickel, cobalt, titanium, tungsten, or a combination thereof.

7. The interconnect structure of claim 1 , wherein the additive metal comprises manganese.

8. The interconnect structure of claim 1 , wherein the alloy layer has a thickness in a range from about 3 angstroms (Å) to about 50 angstroms (Å).

9. The interconnect structure of claim 1 , wherein the barrier layer and the alloy layer comprise a same chemical element.

10. The interconnect structure of claim 9 , wherein the same chemical element is manganese.

11. The interconnect structure of claim 1 , wherein the glue layer comprises titanium nitride, tantalum nitride, or a combination thereof.

12. The interconnect structure of claim 1 , wherein the glue layer has a thickness in a range from about 5 angstroms (Å) to about 50 angstroms (Å).

13. An interconnect structure, comprising:
a contact layer over a substrate;
a dielectric layer having a recess over the contact layer, the recess being in contact with a portion of the contact layer;
a silicide layer over the portion of the contact layer;
a metal oxide layer along sidewalls of the recess, the metal oxide layer comprising at least one of the manganese oxide (MnOx) or manganese silicon oxide (MnSiyOz);
an alloy layer over the metal oxide layer and the silicide layer, the alloy layer comprising a first metal and a second metal different from the first metal, the first metal comprising manganese, the metal oxide layer interposed between the alloy layer and the dielectric layer, wherein the alloy layer is in contact with the silicide layer, and ratio of an additive metal to a main metal in the alloy layer ranges from about 0.01 atomic percent (at %) to about 25 atomic percent (at %);
a glue layer over the alloy layer; and
a conductive plug over the glue layer.

14. The interconnect structure of claim 13 , wherein the second metal comprises nickel, cobalt, titanium, tungsten, or a combination thereof.

15. A semiconductor structure, comprising:
a contact layer over a substrate, the contact layer having a top surface;
a dielectric layer over the top surface, wherein the dielectric layer comprises a recess, the recess comprising an exposed portion of the contact layer below the top surface;
a silicide layer on the exposed portion of the contact layer;
a barrier layer lining sidewall portions of the recess;
an alloy layer over and in contact with the silicide layer, the alloy layer over the barrier layer;
an adhesion layer over the alloy layer; and
a conductive material over the adhesion layer, the conductive material substantially filling the recess;
wherein:
the barrier layer comprises manganese oxide (MnOx) or manganese silicon oxide (MnSiyOz); and
a ratio of an additive metal to a main metal in the alloy layer ranges from about 0.01 atomic percent (at %) to about 25 atomic percent (at %).

16. The interconnect structure of claim 13 , wherein the contact layer comprises silicon, silicon germanium, silicon phosphide, silicon carbide, or a combination thereof.

17. The interconnect structure of claim 13 , wherein the silicide layer comprises nickel silicide, cobalt silicide, titanium silicide, tungsten silicide, or a combination thereof.

18. The semiconductor structure of claim 15 , wherein the contact layer comprises silicon, silicon germanium, silicon phosphide, silicon carbide, or a combination thereof.

19. The semiconductor structure of claim 15 , wherein the silicide layer comprises nickel silicide, cobalt silicide, titanium silicide, tungsten silicide, or a combination thereof.

20. The semiconductor structure of claim 15 , wherein the adhesion layer comprises titanium nitride, tantalum nitride, or a combination thereof.

Assignees

• Taiwan Semiconductor Mfg

Inventors

• Lin Yu-Hung
• Fu Mei-Hui
• Lin Wei-Jung
• Chou You-Hua
• Hsu Chia-Lin
• Huang Hon-Lin
• Lin Shih-Chi

Classifications

• H10W20/0552

  by diffusing metallic dopants to react with dielectrics · CPC title

• H10P14/414

  of metal-silicide materials · CPC title

• H10D64/0112

  using conductive layers comprising silicides · CPC title

• H10W20/4446

  Refractory-metal alloys · CPC title

• H10W20/4403

  based on metals, e.g. alloys, metal silicides (H10W20/4484 takes precedence) · CPC title