Apparatus and Methods for Beam Processing of Substrates
US-2021109450-A1 · Apr 15, 2021 · US
Features for Improving Process Uniformity in a Millisecond Anneal System
US2020402811A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2020402811-A1 |
| Application number | US-202017012146-A |
| Country | US |
| Kind code | A1 |
| Filing date | Sep 4, 2020 |
| Priority date | Dec 30, 2015 |
| Publication date | Dec 24, 2020 |
| Grant date | — |
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Abstract
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Systems and methods for improving process uniformity in a millisecond anneal system are provided. In some implementations, a process for thermally treating a substrate in a millisecond anneal system can include obtaining data indicative of a temperature profile associated with one or more substrates during processing in a millisecond anneal system. The process can include one or more of (1) changing the pressure inside the processing chamber of the millisecond anneal system; (2) manipulating the irradiation distribution by way of the refracting effect of a water window in the millisecond anneal system; (3) adjusting the angular positioning of the substrate; and/or (4) configuring the shape of the reflectors used in the millisecond anneal system.
First claim
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1 - 11 . (canceled) 12 . A process for thermally treating a substrate in a millisecond anneal system, comprising: obtaining data indicative of a temperature profile associated with one or more substrates during processing in a millisecond anneal system, the millisecond anneal system having a wafer plane plate dividing the processing chamber into a top chamber and a bottom chamber; adjusting a shape, configuration, or position of one or more of an edge reflector or a wedge reflector in the millisecond anneal system based at least in part on the temperature profile. 13 . The process of claim 12 , wherein the wedge reflector is located on a chamber wall proximate the wafer plane plate. 14 . The process of claim 13 , wherein adjusting a shape, configuration, or position of one or more of an edge reflector or a wedge reflector in the millisecond anneal system comprises adjusting a wedge angle for the wedge reflector. 15 . The process of claim 13 , wherein adjusting a shape, configuration, or position of one or more of an edge reflector or a wedge reflector in the millisecond anneal system comprises adjusting a height for the wedge reflector. 16 . The process of claim 13 , wherein the edge reflector is located in the wafer plane plate. 17 . The process of claim 12 , wherein adjusting a shape, configuration, or position of one or more of an edge reflector or a wedge reflector in the millisecond anneal system comprises adjusting a surface profile for the edge reflector. 18 . The process of claim 12 , wherein adjusting a shape, configuration, or position of one or more of an edge reflector or a wedge reflector in the millisecond anneal system comprises adjusting, with one or more controllers, a position of wedge reflector relative to the substrate during processing of the substrate. 19 . A process for thermally treating a substrate in a millisecond anneal system, comprising: obtaining data indicative of a temperature profile associated with one or more substrates during processing in a millisecond anneal system, the millisecond anneal system having a wafer plane plate dividing the processing chamber into a top chamber and a bottom chamber, the wafer plane plate comprising a non-rotating substrate support; determining an angular location for placement of a device substrate in a processing chamber of the millisecond anneal system, the angular position determined based at least in part on the temperature profile. 20 . The process of claim 19 , wherein the angular position is determined based at least in part on a location of one or more support pins in the millisecond anneal system.
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characterised by the mechanical construction of the susceptor, stage or support · CPC title
characterised by the construction of the processing chambers, e.g. modular processing chambers · CPC title
mainly by radiation · CPC title
mainly by convection · CPC title
using incoherent radiation · CPC title
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- What does patent US2020402811A1 cover?
- Systems and methods for improving process uniformity in a millisecond anneal system are provided. In some implementations, a process for thermally treating a substrate in a millisecond anneal system can include obtaining data indicative of a temperature profile associated with one or more substrates during processing in a millisecond anneal system. The process can include one or more of (1) cha…
- Who is the assignee on this patent?
- Mattson Tech Inc, Beijing E Town Semiconductor Tech Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification H10P95/90. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Thu Dec 24 2020 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 6 related publications on this page (citations in our corpus or others sharing the same primary CPC).