Method and apparatus for controlling stress variation in a material layer formed via pulsed dc physcial vapor deposition

Patent metadata

Field	Value
Publication number	US-2018308670-A1
Application number	US-201815899634-A
Country	US
Kind code	A1
Filing date	Feb 20, 2018
Priority date	Apr 20, 2017
Publication date	Oct 25, 2018
Grant date	—

Abstract

A method and apparatus are for controlling stress variation in a material layer formed via pulsed DC physical vapour deposition. The method includes the steps of providing a chamber having a target from which the material layer is formed and a substrate upon which the material layer is formable, and subsequently introducing a gas within the chamber. The method further includes generating a plasma within the chamber and applying a first magnetic field proximate the target to substantially localise the plasma adjacent the target. An RF bias is applied to the substrate to attract gas ions from the plasma toward the substrate and a second magnetic field is applied proximate the substrate to steer gas ions from the plasma to selective regions upon the material layer formed on the substrate.

First claim

What is claimed is:

1 . A method of controlling stress variation in a material layer formed via pulsed DC physical vapour deposition, the method comprising the steps of:
providing a chamber comprising a target from which the material layer is formed and a substrate upon which the material layer is formable; introducing a gas within the chamber; generating a plasma within the chamber; applying a first magnetic field proximate the target to substantially localise the plasma adjacent the target; applying an RF bias voltage to the substrate; applying a second magnetic field proximate the substrate to steer gas ions from the plasma to selective regions upon the material layer formed on the substrate wherein the gas ions steered by the second magnetic field are substantially unaffected by the first magnetic field.

2 . A method according to claim 1 , wherein the second magnetic field is applied at a central portion of the substrate.

3 . A method according to claim 1 , further comprising rotating the second magnetic field relative to the substrate.

4 . A method according to claim 1 further comprising rotating the second magnetic field relative to the substrate as the material layer is formed.

5 . A method according to claim 3 , wherein the rotation take places about an axis which extends substantially perpendicular to the substrate.

6 . A method according to claim 1 , further comprising a plurality of deposition steps for forming the material layer, wherein the substrate is rotated relative to platen prior to commencing each step.

7 . A method according to claim 6 , wherein the substrate is rotated through a angular range of 360°/n relative to the platen, between each deposition step, where n is the number of deposition steps.

8 . Apparatus for controlling stress variation in a material layer formed via pulsed DC physical vapour deposition, the apparatus comprising:
a chamber for housing a target from which the material layer is formed and a substrate upon which the material layer is formable, the chamber comprising an inlet for introducing a gas into the chamber; a plasma generating arrangement for generating a plasma within the chamber; and, a voltage source for applying an RF bias voltage to the substrate; wherein the apparatus further comprises a first magnetic field generating arrangement configured to in use generate a first magnetic field proximate the target for localising the plasma adjacent the target, and a second magnetic field generating arrangement for generating in use a second magnetic field proximate the substrate to steer gas ions from the plasma to selective regions upon the material layer formed on the substrate and wherein the gas ions steered by the second magnetic field are substantially unaffected by the first magnetic field.

9 . Apparatus according to claim 8 , wherein the second magnetic field generating arrangement is disposed at a side of the substrate which is opposite a side of the substrate facing the plasma.

10 . Apparatus according to claim 8 , wherein the second magnetic field generating arrangement comprises a plurality of magnets configured to an array.

11 . Apparatus according to claim 10 , further comprising means for rotating the second magnetic field generating arrangement relative to the substrate.

12 . Apparatus according to claim 10 , wherein the plurality of magnets are disposed within a cassette.

13 . Apparatus according to claim 12 as appended to claim 10 , wherein the means for rotating the second magnetic field comprises a spindle rotationally coupled with the cassette.

14 . Apparatus according to claim 13 , wherein the spindle and cassette are rotationally driven via a motor.

15 . Apparatus according to claim 10 , wherein the plurality of magnets are arranged in an array having rotational symmetry.

16 . Apparatus according to claim 15 , wherein, in use a centre of the array is configured to extend adjacent a centre of the substrate.

17 . Apparatus according to claim 15 , wherein north-south axes of the magnets of the array extend substantially parallel to each other.

18 . Apparatus according to claim 15 , wherein the north-south axes extend substantially perpendicular to the substrate.

19 . Apparatus according to claim 10 , wherein the magnetic pole disposed adjacent the substrate is the same for each magnet.

20 . Apparatus according to claim 10 , wherein the magnetic poles disposed adjacent the substrate for adjacent magnets of the array are different poles.

Assignees

• Spts Technologies Ltd

Inventors

• Wilby Anthony
• Burgess Steve
• Moncrieff Ian
• Widdicks Clive
• Haymore Scott
• Hyndman Rhonda

Classifications

• H10P14/69391

  the material containing aluminium, e.g. Al2O3 · CPC title

• H10P14/6329

  using physical ablation of a target, e.g. physical vapour deposition or pulsed laser deposition · CPC title

• H10P14/44

  Physical vapour deposition [PVD] · CPC title

• H10W20/056

  by filling conductive material into holes, grooves or trenches · CPC title

• C23C14/54

  Controlling or regulating the coating process · CPC title