Adhesion Enhancing Structures for a Package

Patent metadata

Field	Value
Publication number	US-2020043876-A1
Application number	US-201916520597-A
Country	US
Kind code	A1
Filing date	Jul 24, 2019
Priority date	Jul 31, 2018
Publication date	Feb 6, 2020
Grant date	—

Abstract

A package includes an electronic chip having a pad. The pad is at least partially covered with adhesion enhancing structures. The pad and the adhesion enhancing structures have at least aluminium in common.

First claim

What is claimed is:

1 . A package comprising an electronic chip having a pad, wherein the pad is at least partially covered with adhesion enhancing structures, and wherein the pad and the adhesion enhancing structures have at least aluminium in common.

2 . The package of claim 1 , further comprising a dielectric structure at least partly covering the electronic chip.

3 . The package of claim 2 , wherein at least a part of the adhesion enhancing structures is covered directly by the dielectric structure, and/or wherein the dielectric structure comprises a mold compound which at least partially encapsulates the electronic chip.

4 . The package of claim 1 , wherein the adhesion enhancing structures comprise at least one of aluminium oxide and aluminium hydroxide.

5 . The package of claim 1 , wherein the pad comprises at least one of pure aluminium, aluminium-copper, aluminium-silicon-copper, and copper with an aluminium oxide coating.

6 . The package of claim 1 , wherein the adhesion enhancing structures form a substantially homogeneous layer.

7 . The package of claim 1 , wherein the adhesion enhancing structures have a height in a range between 50 nm and 1000 nm.

8 . The package of claim 1 , wherein the adhesion enhancing structures comprise at least one of nanofibers and microfibers.

9 . A package, comprising:
a chip carrier; an electronic chip mounted on the chip carrier; and a dielectric structure covering at least part of a surface of at least one of the chip carrier and the electronic chip, wherein at least part of the covered surface comprises hydrothermally formed adhesion enhancing structures.

10 . The package of claim 9 , wherein at least one of the adhesion enhancing structures and the surface comprises aluminium.

11 . The package of claim 9 , further comprising a connection element electrically coupling the electronic chip with the chip carrier and having a surface which is at least partially covered by the dielectric structure, wherein the covered surface of the connection element comprises hydrothermally formed adhesion enhancing structures.

12 . A method of forming a semiconductor package, the method comprising:
providing an aluminium based surface; and roughening the surface by forming adhesion enhancing structures by a hydrothermal process.

13 . The method of claim 12 , wherein the adhesion enhancing structures comprise aluminium.

14 . The method of claim 12 , the adhesion enhancing structures are formed on an electrically conductive surface.

15 . The method of claim 12 , further comprising converting material of the surface into at least part of the adhesion enhancing structures.

16 . The method of claim 12 , further comprising providing an electronic chip with a pad, wherein the pad forms at least part of the surface.

17 . The method of claim 12 , wherein forming the adhesion enhancing structures comprises placing the surface in a heated aqueous solution.

18 . The method of claim 17 , further comprising at least one of:
heating the aqueous solution to a temperature in a range between 50° C. and 90° C.; providing at least one of purified water, deionized water or distilled water as the aqueous solution; and maintaining the surface in the heated aqueous solution for a time interval between 1 minute and 10 hours.

19 . The method of claim 12 , further comprising at least partially encapsulating the surface with the adhesion enhancing structures by a dielectric structure.

20 . The method of claim 12 , wherein the hydrothermal process comprises hydrothermally converting material of the surface into the adhesion enhancing structures.

Assignees

• Infineon Technologies Ag

Inventors

• Napetschnig Evelyn
• Lee Wei Cheat
• Lim Wei Lee
• Renner Frank
• Rogalli Michael

Classifications

• H10W72/01908

  using permanent auxiliary members, e.g. using alignment marks · CPC title

• H10W72/983

  Reinforcing structures, e.g. collars · CPC title

• H10W72/981

  Auxiliary members, e.g. spacers · CPC title

• H10W72/952

  comprising metals or metalloids, e.g. PbSn, Ag or Cu · CPC title

• H10W72/019

  of bond pads · CPC title