Resist multilayer film-attached substrate and patterning process

Patent metadata

Field	Value
Publication number	US-2019041753-A1
Application number	US-201816044159-A
Country	US
Kind code	A1
Filing date	Jul 24, 2018
Priority date	Aug 4, 2017
Publication date	Feb 7, 2019
Grant date	—

Abstract

The present invention provides a resist multilayer film-attached substrate, including a substrate and a resist multilayer film formed on the substrate, in which the resist multilayer film has an organic resist underlayer film difficultly soluble in ammonia hydrogen peroxide water, an organic film soluble in ammonia hydrogen peroxide water, a silicon-containing resist middle layer film, and a resist upper layer film laminated on the substrate in the stated order. There can be provided a resist multilayer film-attached substrate that enables a silicon residue modified by dry etching to be easily removed in a wet manner with a removing liquid harmless to a semiconductor apparatus substrate and an organic resist underlayer film required in the patterning process, for example, an ammonia aqueous solution containing hydrogen peroxide called SC1, which is commonly used in the semiconductor manufacturing process.

First claim

What is claimed is:

1 . A resist multilayer film-attached substrate, comprising a substrate and a resist multilayer film formed on the substrate,
the resist multilayer film having an organic resist underlayer film difficultly soluble in ammonia hydrogen peroxide water, an organic film soluble in ammonia hydrogen peroxide water, a silicon-containing resist middle layer film, and a resist upper layer film laminated on the substrate in the stated order.

2 . The resist multilayer film-attached substrate according to claim 1 , wherein the organic film soluble in ammonia hydrogen peroxide water is a cured product of a composition for forming an organic film comprising an organic solvent and a polymer compound having one or more of repeating units shown by the following general formulae (1) to (4),

wherein R 1 represents a hydrocarbon group having 1 to 19 carbon atoms, a halogen atom, an alkoxy group, a carboxyl group, a sulfo group, a methoxycarbonyl group, a hydroxyphenyl group, or an amino group; R 2 represents a hydrogen atom or AL which is a group capable of generating an acidic functional group by heat or acid; R 3 represents a hydrogen atom, a furanyl group, or a hydrocarbon group having 1 to 16 carbon atoms and optionally containing a chlorine atom or a nitro group; k 1 , k 2 , and k 3 represent 1 or 2; “l” represents 1 to 3; “m” represents 0 to 3; and “n” represents 0 or 1.

3 . The resist multilayer film-attached substrate according to claim 2 , wherein the organic solvent contains one or more compounds selected from propylene glycol esters, ketones, and lactones, the compounds having a total concentration of more than 30 wt % with respect to the whole organic solvent.

4 . The resist multilayer film-attached substrate according to claim 2 , wherein the composition for forming an organic film further comprises either or both of a thermal acid generator and a crosslinking agent.

5 . The resist multilayer film-attached substrate according to claim 3 , wherein the composition for forming an organic film further comprises either or both of a thermal acid generator and a crosslinking agent.

6 . The resist multilayer film-attached substrate according to claim 1 , wherein the organic film soluble in ammonia hydrogen peroxide exhibits a dissolution rate of 5 nm/min or more by treatment with a solution containing 29% ammonia water, 35% hydrogen peroxide water, and water with a ratio of 1:1:8 at 65° C.

7 . The resist multilayer film-attached substrate according to claim 2 , wherein the organic film soluble in ammonia hydrogen peroxide exhibits a dissolution rate of 5 nm/min or more by treatment with a solution containing 29% ammonia water, 35% hydrogen peroxide water, and water with a ratio of 1:1:8 at 65° C.

8 . The resist multilayer film-attached substrate according to claim 3 , wherein the organic film soluble in ammonia hydrogen peroxide exhibits a dissolution rate of 5 nm/min or more by treatment with a solution containing 29% ammonia water, 35% hydrogen peroxide water, and water with a ratio of 1:1:8 at 65° C.

9 . The resist multilayer film-attached substrate according to claim 4 , wherein the organic film soluble in ammonia hydrogen peroxide exhibits a dissolution rate of 5 nm/min or more by treatment with a solution containing 29% ammonia water, 35% hydrogen peroxide water, and water with a ratio of 1:1:8 at 65° C.

10 . The resist multilayer film-attached substrate according to claim 5 , wherein the organic film soluble in ammonia hydrogen peroxide exhibits a dissolution rate of 5 nm/min or more by treatment with a solution containing 29% ammonia water, 35% hydrogen peroxide water, and water with a ratio of 1:1:8 at 65° C.

11 . The resist multilayer film-attached substrate according to claim 1 , wherein the organic film soluble in ammonia hydrogen peroxide has a thickness of 10 nm or more and less than 100 nm.

12 . The resist multilayer film-attached substrate according to claim 2 , wherein the organic film soluble in ammonia hydrogen peroxide has a thickness of 10 nm or more and less than 100 nm.

13 . The resist multilayer film-attached substrate according to claim 3 , wherein the organic film soluble in ammonia hydrogen peroxide has a thickness of 10 nm or more and less than 100 nm.

14 . The resist multilayer film-attached substrate according to claim 1 , wherein the silicon-containing resist middle layer film contains either or both of boron and phosphorus.

15 . The resist multilayer film-attached substrate according to claim 2 , wherein the silicon-containing resist middle layer film contains either or both of boron and phosphorus.

16 . The resist multilayer film-attached substrate according to claim 3 , wherein the silicon-containing resist middle layer film contains either or both of boron and phosphorus.

17 . A patterning process comprising:
photo-exposing the resist upper layer film of the resist multilayer film-attached substrate according to claim 1 , and developing the resist upper layer film with a developer to form a pattern in the resist upper layer film; transferring the pattern to the silicon-containing resist middle layer film by etching using the resist upper layer film having the formed pattern as an etching mask; transferring the pattern to the organic film and the organic resist underlayer film by etching using the silicon-containing resist middle layer film having the transferred pattern as an etching mask; removing the silicon-containing resist middle layer film having the transferred pattern and the organic film having the transferred pattern by treatment with ammonia hydrogen peroxide water; and transferring the pattern to the substrate by using the organic resist underlayer film having the transferred pattern as a mask.

18 . A patterning process comprising:
photo-exposing the resist upper layer film of the resist multilayer film-attached substrate according to claim 2 , and developing the resist upper layer film with a developer to form a pattern in the resist upper layer film; transferring the pattern to the silicon-containing resist middle layer film by etching using the resist upper layer film having the formed pattern as an etching mask; transferring the pattern to the organic film and the organic resist underlayer film by etching using the silicon-containing resist middle layer film having the transferred pattern as an etching mask; removing the silicon-containing resist middle layer film having the transferred pattern and the organic film having the transferred pattern by treatment with ammonia hydrogen peroxide water; and transferring the pattern to the substrate by using the organic resist underlayer film having the transferred pattern as a mask.

19 . A patterning process comprising:
photo-exposing the resist upper layer film of the resist multilayer film-attached substrate according to claim 3 , and developing the resist upper layer film with a developer to form a pattern in the resist upper layer film; transferring the pattern to the silicon-containing resist middle layer film by etching using the resist upper layer film having the formed pattern as an etching mask; transferring the pattern to the organic film and the organic resist underlayer film by etching using the silicon-containing resist middle layer film having the transferred pattern as an etching mask; removing the silicon-containing resist middle layer film having the transferred patter

Assignees

• Shinetsu Chemical Co
• IBM

Inventors

• Tachibana Seiichiro
• Ogihara Tsutomu
• Nagai Hiroko
• Lallement Romain
• Petrillo Karen E

Classifications

• H10P76/2043

  using an anti-reflective coating · CPC title

• H10P76/2041

  Photolithographic processes · CPC title

• H10P76/405

  characterised by their composition, e.g. multilayer masks · CPC title

• H10P76/403

  for lift-off processes · CPC title

• H10P76/20

  of masks comprising organic materials · CPC title