Hardmask composition, hardmask layer, and method of forming patterns
US-2024377746-A1 · Nov 14, 2024 · US
Mask etch for patterning
US2016293441A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016293441-A1 |
| Application number | US-201514677890-A |
| Country | US |
| Kind code | A1 |
| Filing date | Apr 2, 2015 |
| Priority date | Apr 2, 2015 |
| Publication date | Oct 6, 2016 |
| Grant date | — |
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Abstract
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A hard mask layer is deposited on a feature layer over a substrate. The hard mask layer comprises an organic mask layer. An opening in the organic mask layer is formed using a first gas comprising a halogen element at a first temperature greater than a room temperature to expose a portion of the feature layer. In one embodiment, a gas comprising a halogen element is supplied to a chamber. An organic mask layer on an insulating layer over a substrate is etched using the halogen element at a first temperature to form an opening to expose a portion of the insulating layer.
First claim
Opening claim text (preview).
1 . A method to manufacture an electronic device, comprising: depositing a first hard mask layer on a feature layer over a substrate, the first hard mask layer comprising an organic mask layer; and forming an opening in the first hard mask layer using a first plasma comprising a halogen element at a first temperature greater than a room temperature to expose a portion of the feature layer, wherein a difference between the size of the opening at a top of the first hard mask layer and the size…
Assignees
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Classifications
- H10P76/405Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H10P50/73Primary
Electricity · mapped topic
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- What does patent US2016293441A1 cover?
- A hard mask layer is deposited on a feature layer over a substrate. The hard mask layer comprises an organic mask layer. An opening in the organic mask layer is formed using a first gas comprising a halogen element at a first temperature greater than a room temperature to expose a portion of the feature layer. In one embodiment, a gas comprising a halogen element is supplied to a chamber. An or…
- Who is the assignee on this patent?
- Applied Materials Inc
- What technology area does this patent fall under?
- Primary CPC classification H10P76/405. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Thu Oct 06 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).