Photolithography method and system based on high step slope

Patent metadata

Field	Value
Publication number	US-2018188652-A1
Application number	US-201815905969-A
Country	US
Kind code	A1
Filing date	Feb 27, 2018
Priority date	Oct 23, 2012
Publication date	Jul 5, 2018
Grant date	—

Abstract

A photolithography system based on a high step slope may include a depositing unit configured to manufacture a sacrificial layer having high step slope on a substrate. The system may also include a coating unit configured to coat a photoresist layer on the sacrificial layer by performing a spin-on PR coating process to form a photolithographic layer. The system may further include a photolithography unit configured to perform one or more photolithography processes to the photolithographic layer. The photolithography unit may comprise a plurality of masks of compensation patterns. The compensation pattern may comprise a slope-top compensation pattern and a slope compensation pattern.

First claim

What is claimed is:

1 . A photolithography system based on a high step slope, comprising:
a depositing unit configured to manufacture a sacrificial layer having high step slope on a substrate; a coating unit configured to coat a photoresist layer on the sacrificial layer by performing a spin-on PR coating process to form a photolithographic layer; and a photolithography unit configured to perform one or more photolithography processes to the photolithographic layer, wherein the photolithography unit comprises a plurality of masks of compensation patterns, each mask of the plurality of masks comprises a mask pattern and a compensation pattern, the mask pattern is rectangular across a top of the slope, the slope, and a bottom of the slope, the compensation pattern comprises a slope-top compensation pattern and a slope compensation pattern, the slope-top compensation pattern is rectangular corresponding to the top of the slope, having a length equal to a width of the top of the slope and a width greater than a width of the mask pattern, the slope compensation pattern comprises a plurality of triangles corresponding to the slope adjacent to the mask pattern and the slope-top compensation pattern.

2 . The system according to claim 1 , wherein the slope-top compensation pattern and the mask pattern are axisymmetric patterns, and the slope-top compensation pattern and the mask pattern share the same symmetry axis extending along a direction of a slope gradient.

3 . The system according to claim 2 , wherein the slope compensation pattern comprises four right triangles.

4 . The system according to claim 1 , wherein the slope compensation pattern comprises four right triangles located on an upper part and a lower part of the slope-top compensation pattern.

5 . The system according to claim 4 , wherein a ratio of a width of the slope-top compensation pattern to a width of the mask pattern is within a range from 1.2:1 to 1:1.

6 . The system according to claim 4 , wherein a ratio of a width of the slope-top compensation pattern to a width of the mask pattern is 1.1:1.

7 . The system according to claim 1 , wherein a height of the high step slope is greater than 2 μm and an angle of the high step slope is within a range from 40° to 60°.

8 . The system according to claim 1 , wherein the sacrificial layer is made of tetraethyl orthosilicate (TEOS) or phosphosilicate glass (PSG).

9 . The system according to claim 8 , wherein a thickness of the sacrificial layer is greater than 5 μm.

10 . A mask used in a photolithography system based on a high step slope, comprising:
a mask pattern; and a compensation pattern; wherein the mask pattern is rectangular across a top of the slope, the slope, and a bottom of the slope; and wherein the compensation pattern comprises a slope-top compensation pattern and a slope compensation pattern, the slope-top compensation pattern is rectangular corresponding to the top of the slope, having a length equal to a width of the top of the slope and a width greater than a width of the mask pattern, the slope compensation pattern comprises a plurality of triangles corresponding to the slope adjacent to the mask pattern and the slope-top compensation pattern.

11 . The mask according to claim 10 , wherein the slope-top compensation pattern and the mask pattern are axisymmetric patterns, and the slope-top compensation pattern and the mask pattern share the same symmetry axis extending along a direction of a slope gradient.

12 . The mask according to claim 11 , wherein the slope compensation pattern comprises four right triangles.

13 . The mask according to claim 10 , wherein the slope compensation pattern comprises four right triangles, the four right triangles are located on an upper part and on a lower part of the slope-top compensation pattern.

14 . The mask according to claim 13 , wherein a ratio of a width of the slope-top compensation pattern to a width of the mask pattern is within a range from 1.2:1 to 1:1.

15 . The mask according to claim 13 , wherein a ratio of a width of the slope-top compensation pattern to a width of the mask pattern is 1.1:1.

16 . The mask according to claim 10 , wherein a height of the high step slope is greater than 2 μm and an angle of the high step slope is within a range from 40° to 60°.

Assignees

• Csmc Technologies Fab1 Co Ltd

Inventors

• Su Jiale

Classifications

• G03F7/2035 Primary

  simultaneous coating and exposure; using a belt mask, e.g. endless · CPC title

• G03F1/38

  Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof · CPC title

• G03F7/203 Primary

  comprising an imagewise exposure to electromagnetic radiation or corpuscular radiation · CPC title

• G03F7/70433 Primary

  Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors · CPC title

• G03F1/70

  Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging · CPC title