Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, method for manufacturing electronic device, and electronic device

US9952509B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9952509-B2
Application numberUS-201615200059-A
CountryUS
Kind codeB2
Filing dateJul 1, 2016
Priority dateJan 29, 2014
Publication dateApr 24, 2018
Grant dateApr 24, 2018

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

The present invention relates to a pattern forming method including: forming a film using an actinic ray-sensitive or radiation-sensitive resin composition that includes a (A) resin which has an increase in the polarity by the action of an acid, and thus, has a decrease in the solubility in a developer containing an organic solvent, a (B) compound capable of generating an acid upon irradiation with specific actinic ray or radiation, and a (C) solvent, exposing the film, and developing the exposed film using a developer including an organic solvent, in which the resin (A) has a structure in which a polar group is protected with a leaving group which decomposes to leave by the action of an acid, and the leaving group is a group represented by the following General Formula (I).

First claim

Opening claim text (preview).

What is claimed is: 1. A pattern forming method comprising: forming a film using an actinic ray-sensitive or radiation-sensitive resin composition including (A) a resin which has an increase in the polarity by the action of an acid, and thus, has a decrease in the solubility in a developer containing an organic solvent, (B) a compound capable of generating an acid upon irradiation with actinic rays or radiation, represented by the following General Formula (ZI-3) or (ZI-4), (C) a solvent, and an onium salt composed of a relatively weak acid with respect to the acid generated from the compound (B) upon irradiation with actinic rays or radiation; exposing the film; and developing the exposed film using a developer including an organic solvent, wherein the resin (A) has a structure in which a polar group is protected with a leaving group that decomposes to leave by the action of an acid, and the leaving group is a group represented by the following General Formula (I), and wherein the onium salt is a compound represented by the following General Formulas (d1-1) to (d1-3) or a compound represented by the following General Formulas (C-1) to (C-3): in General Formula (I), Z represents a group which is combined with a carbon atom to form a ring structure, Ra 1 to Ra 3 each independently represent an organic group, at least two members out of Ra 1 to Ra 3 may be bonded to each other to form a ring, and * represents a direct bond; in General Formula (ZI-3), R 1c to R 5c each independently represent a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, an alkoxy group, an aryloxy group, an alkoxycarbonyl group, an alkylcarbonyloxy group, a cycloalkylcarbonyloxy group, a halogen atom, a hydroxyl group, a nitro group, an alkylthio group, or an arylthio group, R 6c and R 7c each independently represent a hydrogen atom, an alkyl group, a cycloalkyl group, a halogen atom, a cyano group, or an aryl group, Rx and Ry each independently represent an alkyl group, a cycloalkyl group, a 2-oxoalkyl group, a 2-oxocycloalkyl group, an alkoxycarbonylalkyl group, an allyl group, or a vinyl group, among any two or more members out of R 1c to R 5c , R 5c and R 6c , R 6c and R 7c , R 5c and Rx, and Rx and Ry each may be bonded to each other to form a ring structure, and the ring structure may contain an oxygen atom, a sulfur atom, a ketone group, an ester bond, or an amide bond, and Zc − represents a non-nucleophilic anion; in General Formula (ZI-4), R 13 represents a group having a hydrogen atom, a fluorine atom, a hydroxyl group, an alkyl group, a cycloalkyl group, an alkoxy group, an alkoxycarbonyl group, or a cycloalkyl group, R 14 's, in the case where they are present in plural numbers, each independently represent a group having a hydroxyl group, an alkyl group, a cycloalkyl group, an alkoxy group, an alkoxycarbonyl group, an alkylcarbonyl group, an alkylsulfonyl group, a cycloalkylsulfonyl group, or a cycloalkyl group, R 15 's each independently represent an alkyl group, a cycloalkyl group, or a naphthyl group, two R 15 's may be bonded to each other to form a ring, and the ring structure may contain an oxygen atom, a sulfur atom, a ketone group, an ester bond, or an amide bond, l represents an integer of 0 to 2, r represents an integer of 0 to 8, and Z − represents a non-nucleophilic anion; in General Formulas (d1-1) to (d1-3), R 51 is a hydrocarbon group which may have a substituent, Z 2c is a hydrocarbon group having 1 to 30 carbon atoms, which may have a substituent, provided that carbon adjacent to S is not substituted with a fluorine atom, R 52 is an organic group, Y 3 is a linear, branched, or cyclic alkylene group or arylene group, Rf is a hydrocarbon group containing a fluorine atom, and M + 's are each independently a sulfonium cation or an iodonium cation; and in General Formulas (C-1) to (C-3), R 1 , R 2 , and R 3 represent a substituent having 1 or more carbon atoms, L 1 represents a divalent linking group that links a cationic moiety with an anionic moiety, or a single bond, —X − represents an anionic moiety selected from —COO − , —SO 3 − , —SO 2 − , and —N − —R 4 , R 4 represents a monovalent substituent having a carbonyl group: —C(═O)—, a sulfonyl group: —S(═O) 2 —, or a sulfinyl group: —S(═O)— at a site for linking to an adjacent N atom, R 1 , R 2 , R 3 , R 4 , and L 1 may be bonded to one another to form a ring structure, and in (C-3), two members out of R 1 to R 3 may be combined to form a double bond with an N atom. 2. The pattern forming method according to claim 1 , wherein the compound (B) is a compound capable of generating an acid represented by the following General Formula (II) upon irradiation with actinic ray or radiation: in General Formula (II), R 1 and R 2 each independently represents a hydrogen atom, a fluorine atom, or an alkyl group, and R 1 and R 2 , in the case where they are present in plural numbers, may be the same as or different from each other, L represents a divalent linking group and L's in the case where they are present in plural numbers may be the same as or different from each other, A represents a cyclic organic group, x represents an integer of 0 to 20, and y represents an integer of 0 to 10. 3. The pattern forming method according to claim 1 , wherein the content of the compound (B) is more than 5% by mass with respect to the total solids content of the actinic ray-sensitive or radiation-sensitive resin composition. 4. The pattern forming method according to claim 2 , wherein the content of the compound (B) is more than 5% by mass with respect to the total solids content of the actinic ray-sensitive or radiation-sensitive resin composition. 5. The pattern forming method according to claim 1 , wherein the developer including an organic solvent is a developer containing at least one kind of solvent selected from a ketone-based solvent, an ester-based solvent, an alcohol-based solvent, an amide-based solvent, and an ether-based solvent. 6. A method for manufacturing an electronic device, comprising the pattern forming method according to claim 1 .

Assignees

Inventors

Classifications

  • simultaneous coating and exposure; using a belt mask, e.g. endless · CPC title

  • Non-aqueous compositions · CPC title

  • Aqueous alkaline compositions · CPC title

  • in the presence of a fluid, e.g. immersion; using fluid cooling means · CPC title

  • having cover layers or intermediate layers, e.g. subbing layers {(G03F7/091 - G03F7/093, B41N3/03 take precedence)} · CPC title

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Frequently asked questions

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What does patent US9952509B2 cover?
The present invention relates to a pattern forming method including: forming a film using an actinic ray-sensitive or radiation-sensitive resin composition that includes a (A) resin which has an increase in the polarity by the action of an acid, and thus, has a decrease in the solubility in a developer containing an organic solvent, a (B) compound capable of generating an acid upon irr…
Who is the assignee on this patent?
Fujifilm Corp
What technology area does this patent fall under?
Primary CPC classification G03F7/0397. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Apr 24 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).