Photolithography method and system based on high step slope

Patent metadata

Field	Value
Publication number	US-9939724-B2
Application number	US-201314435945-A
Country	US
Kind code	B2
Filing date	Sep 3, 2013
Priority date	Oct 23, 2012
Publication date	Apr 10, 2018
Grant date	Apr 10, 2018

Abstract

A photolithography method and system based on a high step slope are provided. The method includes: S 1 , manufacturing a sacrificial layer with a high step slope on a substrate; S 2 , adopting a spin-on PR coating process to cover the sacrificial layer with a photoresist layer to form a photolithographic layer; S 3 , forming a mask pattern and a compensation pattern on a mask; and S 4 , performing photolithography processes, by a photolithography machine, on the photolithographic layer. By forming a slope-top compensation pattern and a slope compensation pattern on a mask to perform photolithography on the substrate of a sacrificial layer, a relatively wide compensation pattern is set in a part of the top of the slope with a small thickness, thereby compensating the overexposure at the top of the slope, reducing the error in the photolithographic pattern, and improving the precision of photolithography of the high step slope.

First claim

What is claimed is:

1. A photolithography method based on a high step slope, comprising:
S 1 , manufacturing a sacrificial layer having a high step slope on a substrate;
S 2 , coating a photoresist layer on the sacrificial layer by performing a spin-on PR coating process to form a photolithographic layer;
S 3 , forming a mask pattern and a compensation pattern on a mask, wherein the mask pattern is a rectangular across the top of the slope, the slope, and the bottom of the slope, the compensation pattern comprises a slope-top compensation pattern and a slope compensation pattern, the slope-top compensation pattern is a rectangular corresponding to the top of the slope having a length equal to a width of the slope, and a width greater than a width of the mask pattern, the slope compensation pattern comprises a plurality of triangles corresponding to the slope adjacent to the mask pattern and the slope-top compensation pattern;
S 4 , performing one or more photolithography processes, by a photolithography machine, to the photolithographic layer using the mask.

2. The method according to claim 1 , wherein the slope-top compensation pattern and the mask pattern are axisymmetric patterns, and the slope-top compensation pattern and the mask pattern share the same symmetry axis extending along a direction of the slope gradient, the slope compensation pattern comprises four right triangles.

3. The method according to claim 2 , wherein a ratio of a width of the slope-top compensation pattern to a width of the mask pattern ranges from 1.2:1 to 1:1.

4. The method according to claim 2 , wherein a ratio of a width of the slope-top compensation pattern to a width of the mask pattern is 1.1:1.

5. The method according to claim 1 , wherein a height of the high step slope is greater than 2 μm, an angle of the high step slope ranges from 40° to 60°.

6. The method according to claim 1 , wherein the sacrificial layer is made of tetraethyl orthosilicate or phosphosilicate glass.

7. The method according to claim 6 , wherein a thickness of the sacrificial layer is greater than 5 μm.

Assignees

• Csmc Technologies Fab1 Co Ltd
• Csmc Tech Fabi Co Ltd

Inventors

• Su Jiale

Classifications

• G03F1/38 Primary

  Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof · CPC title

• G03F7/2035

  simultaneous coating and exposure; using a belt mask, e.g. endless · CPC title

• G03F7/203 Primary

  comprising an imagewise exposure to electromagnetic radiation or corpuscular radiation · CPC title

• G03F7/70433 Primary

  Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors · CPC title

• G03F1/70

  Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging · CPC title