Substrate processing method

Patent metadata

Field	Value
Publication number	US-2018122641-A1
Application number	US-201715857774-A
Country	US
Kind code	A1
Filing date	Dec 29, 2017
Priority date	Dec 11, 2015
Publication date	May 3, 2018
Grant date	—

Abstract

A substrate processing method is provided for performing a plating processing on a substrate having, on a surface thereof, an impurity-doped polysilicon film containing a high concentration of impurities. The substrate processing method includes forming a catalyst layer by supplying, onto the substrate, an alkaline catalyst solution containing a complex of a palladium ion and a monocyclic 5- or 6-membered heterocyclic compound having one or two nitrogen atoms as a heteroatom; and forming a plating layer through electroless plating by supplying a plating liquid onto the substrate after the forming of the catalyst layer.

First claim

We claim:

1 . A substrate processing method of performing a plating processing on a substrate having, on a surface thereof, an impurity-doped polysilicon film containing a high concentration of impurities, the substrate processing method comprising:
forming a catalyst layer by supplying, onto the substrate, an alkaline catalyst solution containing a complex of a palladium ion and a monocyclic 5- or 6-membered heterocyclic compound having one or two nitrogen atoms as a heteroatom; and forming a plating layer through electroless plating by supplying a plating liquid onto the substrate after the forming of the catalyst layer.

2 . The substrate processing method of claim 1 ,
wherein the substrate further includes a base member and an insulating film formed between the base member and the impurity-doped polysilicon film.

3 . The substrate processing method of claim 1 ,
wherein the heterocyclic compound is selected from a group consisting of pyrroline, pyrrole, imidazoline, imidazole, pyrazoline, pyrazole, pyridine, pyridazine, pyrimidine, pyrazine, pyrrolidine, imidazolidine, pyrazolidine, piperidine and piperazine.

4 . The substrate processing method of claim 1 ,
wherein the heterocyclic compound has a substituent selected from a group consisting of a hydroxyl group, a carboxyl group and a sulfate group.

Assignees

• Tokyo Electron Ltd

Inventors

• Hoshino Tomohisa
• Fujita Keiichi
• Hamada Masato

Classifications

• C23C18/1619

  Apparatus for electroless plating · CPC title

• C23C18/40

  using reducing agents · CPC title

• C23C18/1696

  Control of atmosphere · CPC title

• C23C18/1633

  Process of electroless plating · CPC title

• C23C18/1879

  Use of metal, e.g. activation, sensitisation with noble metals · CPC title