Indium phosphide wafer, photoelectric conversion element, and method for producing a monocrystalline indium phosphide

Patent metadata

Field	Value
Publication number	US-2018102446-A1
Application number	US-201715837971-A
Country	US
Kind code	A1
Filing date	Dec 11, 2017
Priority date	Mar 26, 2013
Publication date	Apr 12, 2018
Grant date	—

Abstract

In this photoelectric conversion element wherein group III-IV compound semiconductor single crystals containing zinc as an impurity are used as a substrate, the substrate is increased in size without lowering conversion efficiency. A heat-resistant crucible is filled with raw material and a sealant, and the raw material and sealant are heated, thereby melting the raw material into a melt, softening the encapsulant, and covering the melt from the top with the encapsulant. The temperature inside the crucible is controlled such that the temperature of the top of the encapsulant relative to the bottom of the encapsulant becomes higher in a range that not equal or exceed the temperature of bottom of the encapsulant, and seed crystal is dipped in the melt and pulled upward with respect to the melt, thereby growing single crystals from the seed crystal. Thus, a large compound semiconductor wafer that is at least two inches in diameter and has a low dislocation density of 5,000 cm −2 can be obtained, despite having a low average zinc concentration of 5×10 17 cm −3 to 3×10 18 cm −3 , at which a crystal hardening effect does not manifest.

First claim

1 . A method for producing a monocrystalline indium phosphide containing zinc as an impurity, the method comprising:
placing a raw material and an encapsulant in a heat-resistant pot; heating the raw material and the encapsulant to obtain a melt by melting the raw material and soften the encapsulant such that the encapsulant covers the melt from above; controlling the temperature in the pot such that the temperature of the upper portion of the encapsulant is as high as possible and below the temperature of the lower portion of the encapsulant; and dipping a seed crystal into the melt and pulling up the seed crystal above the melt to grow a single crystal from the seed crystal in a cylindrical shape having a diameter of two inches or more and having a mean zinc concentration from 5×10 17 cm −3 to less than 1×10 18 cm −3 , and a mean dislocation density of 5000 cm −2 or less.

2 . The method for producing a monocrystalline indium phosphide according to claim 1 , wherein the seed crystal is pulled up while the seed crystal is being rotated at 5 rpm to 40 rpm about its rotation axis being a vertical straight line passing through the seed crystal, the pot for holding the melt is being rotated about its rotation axis being a vertical straight line passing through the seed crystal in the same direction as the seed crystal for growing the single crystal, and the rotational rates of the seed crystal and the pot are adjusted such that a “Rs/Rc” ratio of the rotational rate of the seed crystal “Rs” to the rotational rate of the pot “Rc” ranges from 1.10 to 1.33.

3 . The method for producing a monocrystalline indium phosphide according to claim 2 , wherein the rotational rate of the pot ranges from 5 rpm to 35 rpm.

4 . The method for producing a monocrystalline indium phosphide according to claim 1 , wherein the seed crystal is pulled up while a pot holding the melt is being rotated at 5 rpm to 35 rpm about its rotation axis being a vertical straight line passing through the melt held by the pot, and the seed crystal is being rotated about its rotation axis being a vertical straight line passing through the melt held by the pot in the same direction as the pot for growing the single crystal.

5 . The method for producing a monocrystalline indium phosphide according to claim 4 , wherein the rotational rate of the seed crystal ranges from 5 rpm to 40 rpm.

6 . The method for producing a monocrystalline indium phosphide according to claim 1 , wherein the pulling rate of the seed crystal ranges from 5 mm/h to 15 mm/h.

Assignees

• Jx Nippon Mining & Metals Corp

Inventors

• Noda Akira
• Ota Masaru
• Hirano Ryuichi

Classifications

• C30B27/02

  by pulling from a melt · CPC title

• C30B29/42

  Gallium arsenide · CPC title

• C30B15/20

  Controlling or regulating (controlling or regulating in general G05) · CPC title

• C30B15/22 Primary

  Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal · CPC title

• Y02P70/521

  Cross-Sectional Technologies · mapped topic