Apparatus for producing silicon single crystal

Patent metadata

Field	Value
Publication number	US-2016333496-A1
Application number	US-201515112653-A
Country	US
Kind code	A1
Filing date	Feb 3, 2015
Priority date	Feb 12, 2014
Publication date	Nov 17, 2016
Grant date	—

Abstract

An apparatus for producing a silicon single crystal by a Czochralski method with a chamber having a heater therein to heat a raw material and to cool the chamber by a coolant, including: measuring an inlet temperature, outlet temperature, and flow rate in a passage of the coolant to cool the chamber with flowing in the chamber; calculating a removed heat quantity from the chamber based on the measured values of the inlet temperature, outlet temperature, and flow rate; controlling heater power based on the value of the removed heat quantity. This provides an apparatus which can pull a single crystal in a crystal diameter and a crystal pulling rate closer to the target values by controlling the heater power based on a removed heat quantity from the chamber calculated by the measured values of temperatures and a flow rate of the coolant.

First claim

1 - 5 . (canceled)

6 . An apparatus for producing a silicon single crystal based on a Czochralski method provided with a chamber having a heater therein to heat a raw material and cooling means to cool the chamber by a coolant, the apparatus comprising:
measuring means for measuring an inlet temperature, an outlet temperature, and a flow rate in a passage of the coolant to cool the chamber with flowing in the chamber; calculating means for calculating a removed heat quantity from the chamber on the basis of the measured values of the inlet temperature, the outlet temperature, and the flow rate; and heater power-controlling means for controlling heater power on the basis of the calculated value of the removed heat quantity.

7 . The apparatus for producing a silicon single crystal according to claim 6 , further comprising measuring means for measuring a crystal diameter in a straight body forming process, and calculating means for calculating a correction value of the heater power on the basis of the measured value of the crystal diameter.

8 . The apparatus for producing a silicon single crystal according to claim 6 , wherein the heater power-controlling means is provided with a function for calculating a pattern of set values of heater power in a straight body forming process in the next pulling, on the basis of operation result data of the removed heat quantity from the chamber obtained through pulling a silicon single crystal.

9 . The apparatus for producing a silicon single crystal according to claim 7 , wherein the heater power-controlling means is provided with a function for calculating a pattern of set values of heater power in a straight body forming process in the next pulling, on the basis of operation result data of the removed heat quantity from the chamber obtained through pulling a silicon single crystal.

10 . The apparatus for producing a silicon single crystal according to claim 8 , wherein the pattern of set values of heater power in a straight body forming process in the next pulling is calculated such that the set value of the heater power is a power value equivalent to the calculated value of the removed heat quantity.

11 . The apparatus for producing a silicon single crystal according to claim 9 , wherein the pattern of set values of heater power in a straight body forming process in the next pulling is calculated such that the set value of the heater power is a power value equivalent to the calculated value of the removed heat quantity.

12 . The apparatus for producing a silicon single crystal according to claim 8 , wherein the pattern of set values of heater power in a straight body forming process in the next pulling is calculated such that the set values of heater power is given feedback on pattern correction value “W” of heater power determined by the following equation:
W=Ws− ( Ha−Hb )

wherein, “W” represents the pattern correction value of heater power, Ws represents a heater power value at the start of the straight body forming process, Ha represents a removed heat quantity at the start of the straight body forming process, and Hb represents the calculated value of the removed heat quantity in the straight body forming process.

13 . The apparatus for producing a silicon single crystal according to claim 9 , wherein the pattern of set values of heater power in a straight body forming process in the next pulling is calculated such that the set values of heater power is given feedback on pattern correction value “W” of heater power determined by the following equation:
W=Ws− ( Ha−Hb )

wherein, “W” represents the pattern correction value of heater power, Ws represents a heater power value at the start of the straight body forming process, Ha represents a removed heat quantity at the start of the straight body forming process, and Hb represents the calculated value of the removed heat quantity in the straight body forming process.

Assignees

• Shinetsu Handotai Kk

Inventors

• Yanagimachi Takahiro
• Akiba Masahiro
• Tokue Junya
• Sonokawa Susumu

Classifications

• C30B15/20 Primary

  Controlling or regulating (controlling or regulating in general G05) · CPC title

• C30B15/203 Primary

  the relationship of pull rate (v) to axial thermal gradient (G) · CPC title

• C30B29/06

  Silicon · CPC title

• C30B15/22

  Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal · CPC title

• C30B15/14

  Heating of the melt or the crystallised materials · CPC title