Sheet production apparatus for removing a crystalline sheet from the surface of a melt using gas jets located above and below the crystalline sheet

Patent metadata

Field	Value
Publication number	US-9677193-B2
Application number	US-201414242566-A
Country	US
Kind code	B2
Filing date	Apr 1, 2014
Priority date	May 6, 2010
Publication date	Jun 13, 2017
Grant date	Jun 13, 2017

Abstract

In one embodiment, a sheet production apparatus comprises a vessel configured to hold a melt of a material. A cooling plate is disposed proximate the melt and is configured to form a sheet of the material on the melt. A first gas jet is configured to direct a gas toward an edge of the vessel. A sheet of a material is translated horizontally on a surface of the melt and the sheet is removed from the melt. The first gas jet may be directed at the meniscus and may stabilize this meniscus or increase local pressure within the meniscus.

First claim

What is claimed is:

1. A sheet production apparatus comprising:
a vessel configured to hold a melt of a material;
a cooling plate disposed proximate said melt, said cooling plate configured to form a sheet of said material that is horizontal on said melt proximate said cooling plate;
a first gas jet configured to direct a gas toward a meniscus at a juncture of a bottom surface of the sheet and an edge of said vessel; and
a pressure cell that is separate from and downstream of the cooling plate in a direction in which the melt flows, the pressure cell defined by a top section including a ceiling and adjoining sidewalls disposed above the sheet over the first gas jet and defining a gap of less than 0.5 millimeters between a lower extent of the sidewalls and the sheet, the pressure cell further defined by a bottom section including a floor disposed below the sheet and integral with the first gas jet, wherein the pressure cell encloses a gas at a higher pressure than a surrounding atmosphere and wherein the gas is allowed to escape the pressure cell through the gap.

2. The apparatus of claim 1 , further comprising a pump associated with the vessel and oriented to circulate said melt within said vessel.

3. The apparatus of claim 1 , further comprising a second gas jet configured to direct said gas toward said edge of said vessel, said second gas jet positioned opposite said first gas jet and integral with the top section.

4. The apparatus of claim 1 , further comprising a support table disposed adjacent said first gas jet, said support table configured to support said sheet.

5. The apparatus of claim 1 , wherein said material is silicon or silicon and germanium.

Assignees

• Varian Semiconductor Equipment Ass Inc

Inventors

• Kellerman Peter L
• Thronson Gregory D
• Sun Dawei

Classifications

• C30B15/24

  using mechanical means, e.g. shaping guides (shaping dies for edge-defined film-fed crystal growth C30B15/34) · CPC title

• C30B15/002

  Continuous growth · CPC title

• C30B29/06

  Silicon · CPC title

• C30B15/22

  Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal · CPC title

• Y10T117/1048

  Pulling includes a horizontal component · CPC title