Aluminum compound, method of forming thin film by using the same, and method of fabricating integrated circuit device

Patent metadata

Field	Value
Publication number	US-2018076024-A1
Application number	US-201715455879-A
Country	US
Kind code	A1
Filing date	Mar 10, 2017
Priority date	Sep 13, 2016
Publication date	Mar 15, 2018
Grant date	—

Abstract

An aluminum compound is represented by Chemical Formula (I) and is used as a source material for forming an aluminum-containing thin film.

First claim

1 - 5 . (canceled)

6 . A method of forming a thin film, the method comprising:
forming an aluminum-containing film on a substrate using an aluminum compound represented by Chemical Formula (I):

wherein each of R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , R 7 , and R 8 are independently a hydrogen atom, a halogen atom, a C 1 to C 7 substituted or unsubstituted alkyl group, a C 2 to C 7 substituted or unsubstituted alkenyl group, a C 2 to C 7 substituted or unsubstituted alkynyl group, or a C 4 to C 20 substituted or unsubstituted aromatic or alicyclic hydrocarbon group.

7 . The method according to claim 6 , wherein the forming forms the aluminum-containing film using the aluminum compound having a thermal decomposition temperature of about 350° C. to about 550° C.

8 . The method according to claim 6 , wherein the forming forms the aluminum-containing film using the aluminum compound represented by Chemical Formula (II):

wherein each of R 1 and R 5 are independently a C 1 to C 7 alkyl group.

9 . The method according to claim 6 , wherein the forming forms the aluminum-containing film at a temperature of about 300° C. to about 600° C.

10 . The method according to claim 6 , wherein the forming forms the aluminum-containing film by simultaneously or sequentially supplying the aluminum compound and a reactive gas onto the substrate.

11 . The method according to claim 10 , wherein the forming supplies the reactive gas including one of NH 3 , monoalkylamines, dialkylamines, trialkylamines, organic amine compounds, hydrazine compounds, and combinations thereof.

12 . The method according to claim 10 , wherein the forming supplies the reactive gas including one of O 2 , O 3 , plasma O 2 , H 2 O, NO 2 , NO, N 2 O (nitrous oxide), CO 2 , H 2 O 2 , HCOOH, CH 3 COOH, (CH 3 CO) 2 O, and combinations thereof.

13 . The method according to claim 6 , wherein the forming further comprises:
vaporizing a source gas including the aluminum compound; forming an Al source-adsorbed layer on the substrate by supplying the vaporized source gas onto the substrate; and supplying a reactive gas onto the Al source-adsorbed layer.

14 . The method according to claim 6 , wherein the forming forms the aluminum-containing film including an aluminum oxide film, an aluminum nitride film, a carbon-containing aluminum alloy film, or a nitrogen-containing aluminum alloy film.

15 . A method of fabricating an integrated circuit device, the method comprising:
forming a lower structure on a substrate; and forming an aluminum-containing film on the lower structure at a temperature of about 300° C. to about 600° C. using an aluminum compound represented by Chemical Formula (I):

wherein each of R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , R 7 , and R 8 are independently a hydrogen atom, a halogen atom, a C 1 to C 7 substituted or unsubstituted alkyl group, a C 2 to C 7 substituted or unsubstituted alkenyl group, a C 2 to C 7 substituted or unsubstituted alkynyl group, or a C 4 to C 20 substituted or unsubstituted aromatic or alicyclic hydrocarbon group.

16 . The method according to claim 15 , wherein the forming an aluminum-containing film forms the aluminum-containing film using the aluminum compound having a thermal decomposition temperature of about 350° C. to about 550° C.

17 . The method according to claim 15 , wherein the forming an aluminum-containing film forms the aluminum-containing film using the aluminum compound represented by Chemical Formula (II):

wherein each of R 1 and R 5 are independently a C 1 to C 7 alkyl group.

18 . The method according to claim 15 , wherein the forming an aluminum-containing film forms an aluminum oxide film, an aluminum nitride film, a carbon-containing aluminum alloy film, or a nitrogen-containing aluminum alloy film on the lower structure.

19 . The method according to claim 15 , wherein the forming a lower structure comprises:
alternately stacking a plurality of insulating layers and a plurality of sacrificial layers on the substrate, the plurality of insulating layers and the plurality of sacrificial layers extending parallel to the substrate; etching the plurality of sacrificial layers and the plurality of insulating layers to form an opening penetrating the plurality of sacrificial layers and the plurality of insulating layers; and removing the plurality of sacrificial layers through the opening to form a plurality of gate spaces, each of the gate spaces between two insulating layers among the plurality of insulating layers, the forming an aluminum-containing film forms an aluminum oxide film in the plurality of gate spaces by supplying the aluminum compound into the plurality of gate spaces through the opening at a first temperature at a range of about 300° C. to about 600° C.

20 . The method according to claim 19 , further comprising:
densifying the aluminum oxide film by annealing the aluminum oxide film at a second temperature that is higher than the first temperature after the forming an aluminum oxide film.

21 - 25 . (canceled)

26 . A method of forming a thin film comprising forming an aluminum-containing film on a substrate using a heterocyclic precursor including aluminum and nitrogen, the heterocyclic precursor including a heterocyclic ring having more than two carbon atoms.

27 . The method according to claim 26 , wherein the forming forms the aluminum-containing film using the heterocyclic precursor having a thermal decomposition temperature of about 350° C. to about 550° C.

28 . The method according to claim 26 , wherein the forming forms the aluminum-containing film using the heterocyclic precursor represented by Chemical Formula (I):

wherein each of R 1 , R 2 , R 3 , R 4 , R 5 , R 6 , R 7 , and R 8 are independently a hydrogen atom, a halogen atom, a C 1 to C 7 substituted or unsubstituted alkyl group, a C 2 to C 7 substituted or unsubstituted alkenyl group, a C 2 to C 7 substituted or unsubstituted alkynyl group, or a C 4 to C 20 substituted or unsubstituted aromatic or alicyclic hydrocarbon group.

29 . The method according to claim 26 , wherein the forming forms the aluminum-containing film by simultaneously or sequentially supplying the heterocyclic precursor and a reactive gas onto the substrate.

30 . The method according to claim 26 , wherein the forming further comprises:
vaporizing a source gas including the heterocyclic precursor; forming an Al source-adsorbed layer on the substrate by supplying the vaporized source gas onto the substrate; and supplying a reactive gas onto the Al source-adsorbed layer.

Assignees

• Samsung Electronics Co Ltd
• Dnf Co Ltd

Inventors

• Park Gyu-Hee
• Lim Jae-Soon
• Cho Youn-Joung
• Kim Myong-Woon
• Lee Sang-Ick
• LEE Sung-duck
• Cho Sung-Woo

Classifications

• H10P50/283

  by chemical means · CPC title

• H10P50/73

  using masks for insulating materials · CPC title

• H10P14/6518

  by introduction of substances into an already-existing insulating layer · CPC title

• H10P14/6339

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title

• H10P14/668

  the materials being characterised by the deposition precursor materials · CPC title