Semiconductor device
US-2024363707-A1 · Oct 31, 2024 · US
by introduction of substances into an already-existing insulating layer
by introduction of substances into an already-existing insulating layer · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H10P14/6518 |
| Official title | {by introduction of substances into an already-existing insulating layer} |
| Display label | by introduction of substances into an already-existing insulating layer |
| Total patents | 652 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is declining.
| Year | Patents |
|---|---|
| 2015 | 50 |
| 2016 | 67 |
| 2017 | 53 |
| 2018 | 57 |
| 2019 | 94 |
| 2020 | 80 |
| 2021 | 51 |
| 2022 | 56 |
| 2023 | 55 |
| 2024 | 53 |
| 2025 | 34 |
| 2026 | 2 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Semiconductor device
US-2024014294-A1 · Jan 11, 2024 · US
Method of patterning dopant films in high-k dielectrics in a soft mask integration scheme
US-2016351452-A1 · Dec 1, 2016 · US
Semiconductor device manufacturing method
US-9472391-B2 · Oct 18, 2016 · US
Metal-semiconductor contact structure with doped interlayer
US-9466488-B2 · Oct 11, 2016 · US
Method of manufacturing a semiconductor device with a continuous silicate glass structure
US-9384960-B2 · Jul 5, 2016 · US
Method of manufacturing semiconductor device by forming a film on a substrate
US-9384971-B2 · Jul 5, 2016 · US
Method of manufacturing a semiconductor device by forming a film on a substrate
US-9384968-B2 · Jul 5, 2016 · US
Method of patterning dopant films in high-k dielectrics in a soft mask integration scheme
US-2016049337-A1 · Feb 18, 2016 · US
Method of patterning dopant films in high-k dielectrics in a soft mask integration scheme
US-2016027664-A1 · Jan 28, 2016 · US
Silicon oxide-nitride-carbide thin-film with embedded nanocrystalline semiconductor particles
US-9222169-B2 · Dec 29, 2015 · US
Method of manufacturing semiconductor device and substrate processing apparatus
US-2015371843-A1 · Dec 24, 2015 · US
Method of Manufacturing a Semiconductor Device with a Continuous Silicate Glass Structure
US-2015348776-A1 · Dec 3, 2015 · US
Method of manufacturing semiconductor structure
US-2015340276-A1 · Nov 26, 2015 · US
Methods for fabricating integrated circuits including fluorine incorporation
US-9196475-B2 · Nov 24, 2015 · US
Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
US-2015332916-A1 · Nov 19, 2015 · US
Technique for forming a FinFET device using selective ion implantation
US-9190498-B2 · Nov 17, 2015 · US
Metal-semiconductor contact structure with doped interlayer
US-2015325484-A1 · Nov 12, 2015 · US
Substrate Processing Apparatus, Method of Manufacturing Semiconductor Device and Non-Transitory Computer-Readable Recording Medium
US-2015325434-A1 · Nov 12, 2015 · US
Method of making a shallow trench isolation (STI) structures
US-9184088-B2 · Nov 10, 2015 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H10P14/6518?
- CPC H10P14/6518 is the Cooperative Patent Classification code for “by introduction of substances into an already-existing insulating layer.”
- How many patents are filed under CPC H10P14/6518 (by introduction of substances into an already-existing insulating layer)?
- Our database includes 652 publications tagged with this CPC code.
- Is patent activity under CPC H10P14/6518 growing?
- Publication counts under this code: 53 in 2024 vs 34 in 2025 (latest complete years).