Gradient metal liner for interconnect structures
US-2024332075-A1 · Oct 3, 2024 · US
the materials being characterised by the deposition precursor materials
the materials being characterised by the deposition precursor materials · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H10P14/668 |
| Official title | {the materials being characterised by the deposition precursor materials} |
| Display label | the materials being characterised by the deposition precursor materials |
| Total patents | 1,695 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is stable.
| Year | Patents |
|---|---|
| 2015 | 49 |
| 2016 | 65 |
| 2017 | 87 |
| 2018 | 117 |
| 2019 | 190 |
| 2020 | 262 |
| 2021 | 176 |
| 2022 | 194 |
| 2023 | 175 |
| 2024 | 170 |
| 2025 | 175 |
| 2026 | 35 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Selective deposition of metal oxide
US-2024282572-A1 · Aug 22, 2024 · US
Area selective carbon-based film deposition
US-2024234127-A1 · Jul 11, 2024 · US
Scandium precursor for sc2o3 or sc2s3 atomic layer deposition
US-2024092804-A1 · Mar 21, 2024 · US
Method for forming silicon-containing film and film forming apparatus
US-2024087883-A1 · Mar 14, 2024 · US
Integrated dipole region for transistor
US-2024063064-A1 · Feb 22, 2024 · US
Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US-2024030035-A1 · Jan 25, 2024 · US
Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
US-9520282-B2 · Dec 13, 2016 · US
Methods of forming dielectric layers and methods of manufacturing semiconductor devices using the same
US-2016315137-A1 · Oct 27, 2016 · US
Memory device structure and method
US-9406519-B2 · Aug 2, 2016 · US
Thin film transistor and fabricating method thereof, and display device
US-2016181290-A1 · Jun 23, 2016 · US
Gallium lanthanide oxide films
US-2015380240-A1 · Dec 31, 2015 · US
Nitrogen-containing compounds for etching semiconductor structures
US-2015371869-A1 · Dec 24, 2015 · US
Low k porous SiCOH dielectric and integration with post film formation treatment
US-9219037-B2 · Dec 22, 2015 · US
Method for manufacturing semiconductor device, method for processing substrate, substrate processing apparatus and recording medium
US-2015364318-A1 · Dec 17, 2015 · US
ALD PROCESSES FOR LOW LEAKAGE CURRENT AND LOW EQUIVALENT OXIDE THICKNESS BiTaO FILMS
US-2015364537-A1 · Dec 17, 2015 · US
Method for providing a self-aligned pad protection in a semiconductor device
US-2015357234-A1 · Dec 10, 2015 · US
Selective etch of silicon nitride
US-9209012-B2 · Dec 8, 2015 · US
Thin film transistor, thin film transistor array panel including the same, and manufacturing method thereof
US-2015333154-A1 · Nov 19, 2015 · US
Thin film transistor, thin film transistor array panel including the same, and manufacturing method thereof
US-2015333184-A1 · Nov 19, 2015 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H10P14/668?
- CPC H10P14/668 is the Cooperative Patent Classification code for “the materials being characterised by the deposition precursor materials.”
- How many patents are filed under CPC H10P14/668 (the materials being characterised by the deposition precursor materials)?
- Our database includes 1,695 publications tagged with this CPC code.
- Is patent activity under CPC H10P14/668 growing?
- Publication counts under this code: 170 in 2024 vs 175 in 2025 (latest complete years).