Film forming method, film forming system and surface processing method

Patent metadata

Field	Value
Publication number	US-2018037989-A1
Application number	US-201715667817-A
Country	US
Kind code	A1
Filing date	Aug 3, 2017
Priority date	Aug 5, 2016
Publication date	Feb 8, 2018
Grant date	—

Abstract

A metal-containing film can be formed with high continuity with respect to a base when forming the metal-containing film on the base by CVD or ALD. A film forming method of forming, by ALD or CVD, a Ti-containing film on a base film of a processing target object having a SiO 2 film as the base film includes performing a surface processing of accelerating formation of a silanol group on a surface of the SiO 2 film by bringing a fluid containing O and H into contact with the surface of the SiO 2 film; and performing a film forming processing of forming the Ti-containing film on the SiO 2 film, on which the surface processing is performed, by the ALD or the CVD with a Ti source gas which reacts with the silanol group.

First claim

We claim:

1 . A film forming method of forming a metal-containing film on a base of a processing target object by ALD or CVD, the film forming method comprising:
performing a surface processing of accelerating formation of a group containing OH on a surface of the base of the processing target object by bringing a fluid containing O and H into contact with the surface of the base; and performing a film forming processing of forming the metal-containing film on the base, on which the surface processing is performed, by the ALD or the CVD with a film forming source material which reacts with the group containing OH.

2 . The film forming method of claim 1 ,
wherein the base is a base film formed on a substrate.

3 . The film forming method of claim 2 ,
wherein the base film is an oxide film.

4 . The film forming method of claim 3 ,
wherein the base film is a SiO 2 film, and the group containing OH is a silanol group.

5 . The film forming method of claim 1 ,
wherein the base is silicon, and the group containing OH is a silanol group.

6 . The film forming method of claim 1 ,
wherein the metal-containing film is a Ti-containing film.

7 . The film forming method of claim 6 ,
wherein the metal-containing film is a TiN film or a TiBN film.

8 . A film forming method of forming, by ALD or CVD, a Ti-containing film on a base film of a processing target object having a SiO 2 film as the base film, the film forming method comprising:
performing a surface processing of accelerating formation of a silanol group on a surface of the SiO 2 film by bringing a fluid containing O and H into contact with the surface of the SiO 2 film; and performing a film forming processing of forming the Ti-containing film on the SiO 2 film, on which the surface processing is performed, by the ALD or the CVD with a Ti source gas which reacts with the silanol group.

9 . The film forming method of claim 8 ,
wherein the Ti source gas is TiCl 4 , and the Ti-containing film is formed by a condensation reaction of the silanol group with the TiCl 4 .

10 . The film forming method of claim 8 ,
wherein the Ti-containing film is a TiN film formed by using the Ti source gas and a nitriding gas.

11 . The film forming method of claim 8 ,
wherein the Ti-containing film is a TiBN film formed by using the Ti source gas, a B source gas and a nitriding gas.

12 . The film forming method of claim 10 ,
wherein the nitriding gas is NH 3 .

13 . The film forming method of claim 1 ,
wherein the performing of the surface processing is implemented by a wet processing in which a preset aqueous solution as the fluid containing O and H is used and the preset aqueous solution is brought into contact with the surface of the base.

14 . The film forming method of claim 13 ,
wherein the preset aqueous solution is selected from a mixed aqueous solution of ammonia water and hydrogen peroxide, a mixed aqueous solution of hydrochloric acid and hydrogen peroxide, an aqueous solution of hydrogen peroxide and a mixed aqueous solution of sulfuric acid and hydrogen peroxide, and a wet cleaning processing is performed as the wet processing.

15 . The film forming method of claim 13 ,
wherein the performing of the film forming processing is conducted within two hours after conducting the performing of the surface processing by the wet processing.

16 . The film forming method of claim 1 ,
wherein the performing of the surface processing is implemented by a dry processing in which a preset processing gas as the fluid containing O and H is used and the preset processing gas is brought into contact with the surface of the base.

17 . The film forming method of claim 16 ,
wherein the preset processing gas is selected from a vapor of H 2 O 2 , a vapor of O 3 +H 2 O, and a high-temperature vapor of H 2 O.

18 . The film forming method of claim 16 ,
wherein, after the performing of the surface processing by the dry processing, the performing of the film forming processing is conducted in-situ.

Assignees

• Tokyo Electron Ltd

Inventors

• Kaneko Miyako
• Noro Naotaka
• Takahashi Tsuyoshi
• Yamazaki Kazuyoshi

Classifications

• C23C16/54

  Apparatus specially adapted for continuous coating · CPC title

• C23C16/402 Primary

  Silicon dioxide · CPC title

• C23C28/042

  including a refractory ceramic layer, e.g. refractory metal oxides, ZrO2, rare earth oxides · CPC title

• C23C16/0227

  by cleaning or etching · CPC title

• C01C1/00

  Ammonia; Compounds thereof {(C01C3/08, C01C3/14, C01C3/16, C01C3/20 take precedence)} · CPC title