Acid mist suppression in copper electrowinning
US-12098474-B2 · Sep 24, 2024 · US
US2017370014A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2017370014-A1 |
| Application number | US-201715621410-A |
| Country | US |
| Kind code | A1 |
| Filing date | Jun 13, 2017 |
| Priority date | Jun 27, 2016 |
| Publication date | Dec 28, 2017 |
| Grant date | — |
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Electroplating methods enable the plating of photoresist defined features which have substantially uniform morphology. The electroplating methods include copper electroplating baths with reaction products of pyrazole compounds and bisepoxides to electroplate the photoresist defined features. Such features include pillars, bond pads and line space features.
Opening claim text (preview).
What is claimed is: 1 . A method comprising: a) providing a substrate comprising a layer of photoresist, wherein the layer of photoresist comprises a plurality of apertures; b) providing a copper electroplating bath comprising one or more reaction products of one or more pyrazole compounds and one or more bisepoxides; an electrolyte; one or more accelerators; and one or more suppressors; c) immersing the substrate comprising the layer of photoresist with the plurality of apertures in the copper electroplating bath; and d) electroplating a plurality of copper photoresist defined features in the plurality of apertures, the plurality of photoresist defined features comprise an average % TIR of 0% to 10%. 2 . The method of claim 1 , wherein a % WID of the plurality of photoresist defined features is from 0% to 10%. 3 . The method of claim 1 , wherein the one or more pyrazole compounds have a formula: where R 1 , R 2 and R 3 are independently chosen from hydrogen, linear or branched (C 1 -C 10 )alkyl; hydroxyl; linear or branched (C 1 -C 10 )alkoxy; linear or branched hydroxy(C 1 -C 10 )alkyl; linear or branched alkoxy(C 1 -C 10 )alkyl; linear or branched, carboxy(C 1 -C 10 )alkyl, linear or branched amino(C 1 -C 10 )alkyl; and substituted or unsubstituted phenyl. 4 . The method of claim 1 wherein the one or more bisepoxides are chosen from compounds having formula: wherein R 4 and R 5 may be the same or different and are chosen from hydrogen and (C 1 -C 4 )alkyl; R 6 and R 7 may be the same of different and are chosen from hydrogen, methyl and hydroxyl; m=1-6 and n=1-20. 5 . The method of claim 1 , wherein the reaction product is in amounts of 0.25 ppm to 1000 ppm. 6 . The method of claim 1 , wherein electroplating is done at a current density of 0.25 ASD to 40 ASD. 7 . The method of claim 1 , wherein the one or more copper photoresist defined features are pillars, bond pads or line space features. 8 . An array of photoresist defined features on a substrate comprising an average % TIR of 0% to 10% and a % WID of 0% to 10%.
of copper · CPC title
using masking means · CPC title
Semiconductors first coated with a seed layer or a conductive layer · CPC title
characterised by the organic bath constituents used · CPC title
using a pattern electroplated or electroformed on a metallic carrier · CPC title
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