Substrate processing apparatus, substrate processing method and recording medium

Patent metadata

Field	Value
Publication number	US-2017084480-A1
Application number	US-201615264661-A
Country	US
Kind code	A1
Filing date	Sep 14, 2016
Priority date	Sep 18, 2015
Publication date	Mar 23, 2017
Grant date	—

Abstract

A substrate processing apparatus can remove, from a substrate having a copper wiring formed by a dry etching process using an organic etching gas, e.g., one or more kinds of organic etching gases selected from a methane gas, a CF-based gas, a carboxylic acid-based gas containing a methyl group and an alcohol-based gas, an organic polymer which is originated from the organic etching gas and generated in the dry etching process and adheres to a surface of the substrate. In a substrate processing apparatus 1 , a first processing unit 4 includes a first cleaning liquid supply unit 43 a configured to supply a first cleaning liquid L 1 selected from a chemical liquid containing hydrogen peroxide and a chemical liquid containing a polar organic solvent, and the first cleaning liquid L 1 is supplied onto a substrate W 1 from the first cleaning liquid supply unit 43 a.

First claim

We claim:

1 . A substrate processing apparatus including a cleaning processing unit configured to perform a cleaning process of removing, from a substrate having a copper wiring formed by a dry etching process using an organic etching gas, an organic polymer which is originated from the organic etching gas and generated in the dry etching process and adheres to a surface of the substrate; and a control unit configured to control an operation of the cleaning processing unit,
wherein the cleaning processing unit comprises a first cleaning liquid supply unit configured to supply a first cleaning liquid selected from a chemical liquid containing hydrogen peroxide and a chemical liquid containing a polar organic solvent onto the substrate, and the control unit controls the first cleaning liquid supply unit such that the first cleaning liquid is supplied onto the substrate by the first cleaning liquid supply unit.

2 . The substrate processing apparatus of claim 1 ,
wherein the organic etching gas is one or more kinds of gases selected from a methane gas, a CF-based gas, a carboxylic acid-based gas containing a methyl group and an alcohol-based gas.

3 . The substrate processing apparatus of claim 1 ,
wherein the cleaning processing unit further comprises a second cleaning liquid supply unit configured to supply a second cleaning liquid, which is selected from an aqueous solution containing hydrogen fluoride and a strong alkaline aqueous solution, onto the substrate, and the control unit controls the first cleaning liquid supply unit and the second cleaning liquid supply unit such that the second cleaning liquid is supplied onto the substrate by the second cleaning liquid supply unit after the first cleaning liquid is supplied by the first cleaning liquid supply unit.

4 . The substrate processing apparatus of claim 3 ,
wherein the cleaning processing unit further comprises a third cleaning liquid supply unit configured to supply a third cleaning liquid which is selected from an aqueous solution containing hydrogen fluoride and a strong alkaline aqueous solution and is different from the second cleaning liquid, and the control unit controls the first cleaning liquid supply unit, the second cleaning liquid supply unit and the third cleaning liquid supply unit such that the third cleaning liquid is supplied onto the substrate by the third cleaning liquid supply unit after the second cleaning liquid is supplied by the second cleaning liquid supply unit.

5 . The substrate processing apparatus of claim 4 ,
wherein the cleaning processing unit further comprises a rinse liquid supply unit configured to supply a rinse liquid onto the substrate, and the control unit controls the first cleaning liquid supply unit, the second cleaning liquid supply unit, the third cleaning liquid supply unit and the rinse liquid supply unit such that the rinse liquid is supplied onto the substrate from the rinse liquid supply unit after the first cleaning liquid is supplied by the first cleaning liquid supply unit and before the second cleaning liquid is supplied by the second cleaning liquid supply unit, and/or after the second cleaning liquid is supplied by the second cleaning liquid supply unit and before the third cleaning liquid is supplied by the third cleaning liquid supply unit.

6 . The substrate processing apparatus of claim 1 , further comprising:
a coating processing unit configured to perform a coating process of coating the copper wiring of the substrate with a metal film, wherein the control unit controls the cleaning processing unit and the coating processing unit such that the coating process is performed on the substrate by the coating processing unit after performing the cleaning process by the cleaning processing unit.

7 . The substrate processing apparatus of claim 6 , further comprising:
a hydrophobizing agent solution supply unit configured to supply a hydrophobizing agent solution onto the substrate, wherein the control unit controls the cleaning processing unit, the coating processing unit and the hydrophobizing agent solution supply unit such that the hydrophobizing agent solution is supplied onto the substrate by the hydrophobizing agent solution supply unit after performing the cleaning process by the cleaning processing unit and before performing the coating process by the coating processing unit.

8 . The substrate processing apparatus of claim 6 ,
wherein the coating process is an electroless plating process.

9 . A substrate processing method including a cleaning process of removing, from a substrate having a copper wiring formed by a dry etching process using an organic etching gas, an organic polymer which is originated from the organic etching gas and generated in the dry etching process and adheres to a surface of the substrate,
wherein, in the cleaning process, a first cleaning liquid selected from a chemical liquid containing hydrogen peroxide and a chemical liquid containing a polar organic solvent is supplied onto the substrate.

10 . The substrate processing method of claim 9 ,
wherein the organic etching gas is one or more kinds of gases selected from a methane gas, a CF-based gas, a carboxylic acid-based gas containing a methyl group and an alcohol-based gas.

11 . The substrate processing method of claim 9 ,
wherein, in the cleaning process, a second cleaning liquid selected from an aqueous solution containing hydrogen fluoride and a strong alkaline aqueous solution is supplied onto the substrate after the first cleaning liquid is supplied.

12 . The substrate processing method of claim 11 ,
wherein, in the cleaning process, a third cleaning liquid, which is selected from an aqueous solution containing hydrogen fluoride and a strong alkaline aqueous solution and is different from the second cleaning liquid, is supplied onto the substrate after the second cleaning liquid is supplied.

13 . The substrate processing method of claim 12 ,
wherein, in the cleaning process, a rinse liquid is supplied onto the substrate after the first cleaning liquid is supplied and before the second cleaning liquid is supplied, and/or after the second cleaning liquid is supplied and before the third cleaning liquid is supplied.

14 . The substrate processing method of claim 9 , further comprising:
a coating process of coating the copper wiring of the substrate with a metal film after the cleaning process.

15 . The substrate processing method of claim 14 , further comprising:
a hydrophobizing agent solution supplying process of supplying a hydrophobizing agent solution onto the substrate after the cleaning process and before the coating process.

16 . The substrate processing method of claim 14 ,
wherein, in the coating process, the copper wiring of the substrate is coated with the metal film by an electroless plating process.

17 . A substrate processing method, comprising:
preparing a substrate having a copper wiring provided with a preset wiring pattern by a dry etching process; removing an organic polymer, which is originated from an etching gas and generated in the dry etching process and adheres to a surface of the copper wiring, with a cleaning liquid; and coating the surface of the copper wiring of the substrate selectively with a metal film after the removing of the organic polymer.

18 . A computer-readable recording medium having stored thereon computer-executable instructions that, in response to execution, cause a substrate processing apparatus to perform a substrate processing method as claimed in c

Assignees

• Tokyo Electron Ltd

Inventors

• Mizutani Nobutaka
• Iwashita Mitsuaki
• Tanaka Takashi

Classifications

• H10W20/0633

  using subtractive patterning of the conductive members · CPC title

• H01J37/3244

  Gas supply means · CPC title

• H01J37/32009

  Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources (plasma generation in general H05H1/24) · CPC title

• C23C18/1633

  Process of electroless plating · CPC title

• C23C18/1619

  Apparatus for electroless plating · CPC title