Metal wiring layer forming method, metal wiring layer forming apparatus, and recording medium

Patent metadata

Field	Value
Publication number	US-2016240436-A1
Application number	US-201415029655-A
Country	US
Kind code	A1
Filing date	Oct 14, 2014
Priority date	Oct 17, 2013
Publication date	Aug 18, 2016
Grant date	—

Abstract

A metal wiring layer can be formed within a recess of a substrate while suppressing the metal wiring layer from being formed at the outside of the recess. A metal wiring layer forming method includes forming a catalyst layer 5 formed of Pd on a tungsten layer W on a bottom surface 3 a of the recess 3 of the substrate 2 without forming the catalyst layer 5 on a surface 3 b of an insulating layer of the recess 3; and forming a Ni-based metal wiring layer 7 on the catalyst layer 5 of the recess 3.

First claim

1 . A metal wiring layer forming method of forming a metal wiring layer on a substrate, comprising:
preparing a substrate, having a recess including an insulating layer, in which a tungsten layer is formed on a bottom surface of the recess; forming a catalyst layer on the tungsten layer on the bottom surface of the recess without forming the catalyst layer on a surface of the insulating layer of the recess; and forming a metal wiring layer on the catalyst layer within the recess by a plating process.

2 . The metal wiring layer forming method of claim 1 ,
wherein before the forming of the catalyst layer on the tungsten layer on the bottom surface of the recess, an oxide film on a surface of the tungsten layer is removed without forming an adhesion layer on the bottom surface of the recess and on the surface of the insulating layer of the recess.

3 . The metal wiring layer forming method of claim 1 ,
wherein after the forming of the catalyst layer on the tungsten layer on the bottom surface of the recess, the catalyst layer is hardened by being baked.

4 . The metal wiring layer forming method of claim 1 ,
wherein the catalyst layer is formed of a palladium-based catalyst layer, and the metal wiring layer is formed of a Ni-based metal wiring layer.

5 . A metal wiring layer forming method of forming a metal wiring layer on a substrate, comprising:
preparing a substrate, having a recess including an insulating layer, in which a tungsten layer is formed on a bottom surface of the recess; creating, by supplying a silylating agent into the recess, a state in which a coupling agent is attached to the tungsten layer on the bottom surface of the recess without being attached to a surface of the insulating layer of the recess; forming, by supplying the coupling agent into the recess, an adhesion layer on the tungsten layer on the bottom surface of the recess without forming the adhesion layer on the surface of the insulating layer of the recess; forming a catalyst layer on the tungsten layer on the bottom surface of the recess without forming the catalyst layer on the surface of the insulating layer of the recess; and forming a metal wiring layer on the catalyst layer within the recess by a plating process.

6 . The metal wiring layer forming method of claim 5 ,
wherein an oxide film on a surface of the tungsten layer is removed before the supplying of the silylating agent into the recess of the substrate.

7 . The metal wiring layer forming method of claim 5 ,
wherein after the forming of the catalyst layer on the tungsten layer on the bottom surface of the recess, the catalyst layer is hardened by being baked.

8 . The metal wiring layer forming method of claim 5 ,
wherein the catalyst layer is formed of a palladium-based catalyst layer, and the metal wiring layer is formed of a Ni-based metal wiring layer.

9 . A metal wiring layer forming apparatus of forming a metal wiring layer on a substrate, comprising:
a catalyst layer forming unit configured to form, with respect to a substrate, having a recess including an insulating layer, in which a tungsten layer is formed on a bottom surface of the recess, a catalyst layer on the tungsten layer on the bottom surface of the recess of the substrate, without forming the catalyst layer on a surface of the insulating layer of the recess; and a metal wiring layer forming unit configured to form a metal wiring layer on the catalyst layer within the recess by a plating process.

10 . The metal wiring layer forming apparatus of claim 9 , wherein an oxide film removing unit configured to remove an oxide film on a surface of the tungsten layer is provided at the front of the catalyst layer forming unit.

11 . The metal wiring layer forming apparatus of claim 9 ,
wherein a catalyst layer baking unit configured to bake and harden the catalyst layer is provided between the catalyst layer forming unit and the metal wiring layer forming unit.

12 . A metal wiring layer forming apparatus of forming a metal wiring layer on a substrate, comprising:
a silylating agent supplying unit configured to create, with respect to the a substrate, having a recess including a side surface and a bottom surface, in which a tungsten layer is formed on the bottom surface of the recess, a state in which a coupling agent is attached to the tungsten layer at the bottom surface of the recess without being attached to the side surface of the recess, by supplying a silylating agent into the recess; an adhesion layer forming unit configured to form, by supplying the coupling agent into the recess, an adhesion layer on the tungsten layer on the bottom surface of the recess without forming the adhesion layer on the side surface of the recess; a catalyst layer forming unit configured to form a catalyst layer on the tungsten layer on the bottom surface of the recess without forming the catalyst layer on the side surface of the recess; and a metal wiring layer forming unit configured to form a metal wiring layer on the catalyst layer within the recess by a plating process.

13 . The metal wiring layer forming apparatus of claim 12 ,
wherein an oxide film removing unit configured to remove an oxide film on a surface of the tungsten layer is provided at the front of the silylating agent supplying unit.

14 . The metal wiring layer forming apparatus of claim 12 ,
wherein a catalyst layer baking unit configured to bake and harden the catalyst layer is provided between the catalyst layer forming unit and the metal wiring layer forming unit.

15 . A non-transitory computer-readable recording medium having stored thereon computer-executable instructions that, in response to execution, cause one or more processors to perform a metal wiring layer forming method,
wherein the metal wiring layer forming method comprises: preparing a substrate, having a recess including a side surface and a bottom surface, in which a tungsten layer is formed on the bottom surface of the recess; forming a catalyst layer on the tungsten layer on the bottom surface of the recess without forming the catalyst layer on the side surface of the recess; and forming a metal wiring layer on the catalyst layer within the recess by a plating process.

16 . A computer-readable recording medium having stored thereon computer-executable instructions that, in response to execution, cause one or more processors to perform a metal wiring layer forming method,
wherein the metal wiring layer forming method comprises: preparing a substrate, having a recess including a side surface and a bottom surface, in which a tungsten layer is formed on the bottom surface of the recess; creating, by supplying a silylating agent into the recess, a state in which a coupling agent is attached to the tungsten layer on the bottom surface of the recess without being attached to the side surface of the recess; forming, by supplying a coupling agent into the recess, an adhesion layer on the tungsten layer on the bottom surface of the recess without forming the adhesion layer on the side surface of the recess; forming a catalyst layer on the tungsten layer on the bottom surface of the recess without forming the catalyst layer on the side surface of the recess; and forming a metal wiring layer on the catalyst layer within the recess by a plating process.

Assignees

• Tokyo Electron Ltd

Inventors

• Tanaka Takashi
• Mizutani Nobutaka
• Iwashita Mitsuaki

Classifications

• H10P14/46 Primary

  using a liquid · CPC title

• H10W20/47

  comprising two or more dielectric layers having different properties, e.g. different dielectric constants · CPC title

• H10W20/4441

  the principal metal being a refractory metal · CPC title

• H10W20/0526

  by thermal treatment thereof · CPC title

• H10W20/096

  by contacting with gases, liquids or plasmas · CPC title