Semiconductor device, plating method, plating system and recording medium

Patent metadata

Field	Value
Publication number	US-2016247765-A1
Application number	US-201615047710-A
Country	US
Kind code	A1
Filing date	Feb 19, 2016
Priority date	Feb 23, 2015
Publication date	Aug 25, 2016
Grant date	—

Abstract

Adhesivity between a catalyst adsorption layer on a substrate and a barrier metal plating layer can be improved. The catalyst adsorption layer 22 containing a catalyst metal is formed on the substrate 2 by supplying a catalyst solution onto the substrate 2 , and a bonding metal layer 22 A containing a bonding metal different from the catalyst metal is formed on the catalyst adsorption layer 22 by performing a plating process with the catalyst metal as a catalyst. A barrier metal plating layer 23 is formed on the bonding metal layer 22 A by performing a plating process with the bonding metal as a catalyst.

First claim

We claim:

1 . A semiconductor device, comprising:
a substrate; a catalyst adsorption layer, formed on the substrate, containing a catalyst metal adsorbed onto the substrate; a bonding metal layer which is formed on the catalyst adsorption layer by performing a plating process with the catalyst metal as a catalyst and contains a bonding metal different from the catalyst metal; and a barrier metal plating layer formed on the bonding metal layer by performing a plating process with the bonding metal as a catalyst.

2 . The semiconductor device of claim 1 ,
wherein the catalyst metal of the catalyst adsorption layer contains n-Pd or palladium chloride.

3 . The semiconductor device of claim 1 ,
wherein the bonding metal of the bonding metal layer contains Ni or a Ni alloy.

4 . The semiconductor device of claim 1 ,
wherein the barrier metal plating layer contains Co or a Co alloy.

5 . The semiconductor device of claim 1 ,
wherein a thickness of the bonding metal layer is smaller than a thickness of the barrier metal plating layer.

6 . The semiconductor device of claim 1 ,
wherein the barrier metal plating layer has a monolayer structure.

7 . A plating method of performing a plating process on a substrate, comprising:
preparing the substrate; forming a catalyst adsorption layer on the substrate by supplying a catalyst solution containing a catalyst metal onto the substrate; forming a bonding metal layer on the catalyst adsorption layer by supplying a bonding metal solution containing a bonding metal onto the substrate and by performing a plating process with the catalyst metal as a catalyst; and forming a barrier metal plating layer on the bonding metal layer by supplying a barrier metal plating liquid onto the substrate and by performing a plating process with the bonding metal as a catalyst.

8 . The plating method of claim 7 ,
wherein the catalyst metal of the catalyst adsorption layer contains n-Pd or palladium chloride.

9 . The plating method of claim 7 ,
wherein the bonding metal of the bonding metal layer contains Ni or a Ni alloy.

10 . The plating method of claim 7 ,
wherein the barrier metal plating layer contains Co or a Co alloy.

11 . The plating method of claim 7 ,
wherein a thickness of the bonding metal layer is smaller than a thickness of the barrier metal plating layer.

12 . The plating method of claim 7 ,
wherein the barrier metal plating layer has a monolayer structure.

13 . The plating method of claim 7 ,
wherein the substrate is baked after the forming of the bonding metal layer.

14 . A plating system of performing a plating process on a substrate, comprising:
a catalyst adsorption layer forming unit configured to form a catalyst adsorption layer on the substrate by supplying a catalyst solution containing a catalyst metal onto the substrate; a bonding metal layer forming unit configured to form a bonding metal layer on the catalyst adsorption layer by supplying a bonding metal solution containing a bonding metal onto the substrate and by performing a plating process with the catalyst metal as a catalyst; and a plating layer forming unit configured to form a barrier metal plating layer on the bonding metal layer by supplying a barrier metal plating liquid onto the substrate and by performing a plating process with the bonding metal as a catalyst.

15 . The plating system of claim 14 , further comprising:
a baking unit configured to bake the substrate on which the bonding metal layer is formed.

16 . A computer-readable recording medium having stored thereon computer-executable instructions that, in response to execution, cause a plating system to perform a plating method,
wherein the plating method comprises: preparing the substrate; forming a catalyst adsorption layer on the substrate by supplying a catalyst solution containing a catalyst metal onto the substrate; forming a bonding metal layer on the catalyst adsorption layer by supplying a bonding metal solution containing a bonding metal onto the substrate and by performing a plating process with the catalyst metal as a catalyst; and forming a barrier metal plating layer on the bonding metal layer by supplying a barrier metal plating liquid onto the substrate and by performing a plating process with the bonding metal as a catalyst.

Assignees

• Tokyo Electron Ltd

Inventors

• Inatomi Yuichiro
• Tanaka Takashi
• Mizutani Nobutaka
• Saito Yusuke
• IWAI Kazutoshi
• Iwashita Mitsuaki

Classifications

• H10W20/0245

  comprising use of blind vias during the manufacture · CPC title

• H10W20/0261

  characterised by the filling method or the material of the conductive fill · CPC title

• H10P14/46

  using a liquid · CPC title

• H10P72/0414

  using mainly spraying means, e.g. nozzles · CPC title

• H10W20/044

  for electroless plating · CPC title