Etch rate and critical dimension uniformity by selection of focus ring material

Patent metadata

Field	Value
Publication number	US-2017011891-A1
Application number	US-201615276423-A
Country	US
Kind code	A1
Filing date	Sep 26, 2016
Priority date	Feb 29, 2008
Publication date	Jan 12, 2017
Grant date	—

Abstract

A method and apparatus are provided for plasma etching a substrate in a processing chamber. A focus ring assembly circumscribes a substrate support, providing uniform processing conditions near the edge of the substrate. The focus ring assembly comprises two rings, a first ring and a second ring, the first ring comprising quartz, and the second ring comprising monocrystalline silicon, silicon carbide, silicon nitride, silicon oxycarbide, silicon oxynitride, or combinations thereof. The second ring is disposed above the first ring near the edge of the substrate, and creates a uniform electric field and gas composition above the edge of the substrate that results in uniform etching across the substrate surface.

First claim

What is claimed is:

1 . A processing chamber for etching a substrate, comprising:
a chamber body having a substrate support disposed on a cathode; an electrode disposed in the cathode and having a diameter greater than the substrate support; a focus ring disposed on an upper surface of the substrate support, the focus ring comprising a material selected from the group consisting of monocrystalline silicon, silicon carbide, silicon nitride, silicon oxycarbide, and combinations thereof; and a quartz ring disposed on the upper surface of the substrate support, circumscribing the focus ring, wherein the focus ring has a flat lower surface and a notch formed in the flat lower surface.

2 . The chamber of claim 1 , wherein the focus ring has an internal wall at an inner diameter, a first surface extending from the inner wall, a step rising from the first surface, and a second surface extending from the step, wherein the second surface has horizontal dimension less than about 0.15 inches.

3 . The chamber of claim 2 , wherein the second surface has a horizontal dimension between about 0.08 inches and about 0.14 inches.

4 . The chamber of claim 2 , wherein the focus ring has a bevel extending from the second surface that forms an angle with the second surface of less than about 80 degrees.

5 . The chamber of claim 4 , wherein the angle is between about 50° and about 70°.

6 . The chamber of claim 1 , wherein the focus ring has an upper surface having an elevation less than about 0.2 inches above the upper surface of the substrate support.

7 . The chamber of claim 1 , wherein the focus ring has an annular shape and comprises:
a substantially vertical inner wall at an inner radius; a first surface extending from the inner wall in an orientation substantially perpendicular thereto; a first step extending from the first surface and substantially perpendicular thereto; a second surface extending from the first step in an orientation substantially perpendicular thereto; a bevel extending from the second surface and forming an angle less than about 80° with the second surface; and an upper surface extending from the bevel in an orientation substantially parallel to the second surface, wherein the second surface extends from the first step to the bevel a distance between about 0.08 inches and about 0.14 inches.

8 . The chamber of claim 1 , wherein the focus ring is fabricated from silicon.

9 . The chamber of claim 1 , wherein the focus ring has an internal wall at an inner diameter and an outer wall at an outer diameter, and the notch is formed in the lower surface at the outer wall.

10 . A chamber for etching a substrate, comprising:
a chamber body having a substrate support disposed on a cathode; an electrode disposed in the cathode and having a diameter greater than the substrate support; a focus ring disposed above an upper surface of the cathode, the focus ring comprising a material selected from the group consisting of silicon, silicon carbide, silicon nitride, silicon oxycarbide, and combinations thereof; and a quartz ring disposed above the upper surface of the cathode and circumscribing the focus ring, wherein the focus ring further comprises: a substantially vertical inner wall at an inner radius; a first surface extending from the inner wall in an orientation substantially perpendicular thereto; a first step extending from the first surface in an orientation substantially perpendicular thereto; a second surface extending from the first step in an orientation substantially perpendicular thereto; a bevel extending from the second surface and forming an angle less than about 80 degrees with the second surface; and an upper surface extending from the bevel to an outer wall at an outer radius; and a flat lower surface with a notch formed therein.

11 . The chamber of claim 10 , wherein the quartz ring contacts the upper surface of the cathode.

12 . The chamber of claim 10 , wherein the quartz ring contacts the focus ring.

13 . The chamber of claim 10 , wherein the quartz ring and the focus ring each contacts the upper surface of the cathode.

14 . The chamber of claim 10 , wherein the notch is located at the outer wall.

15 . A focus ring for a plasma etch chamber, the focus ring comprising:
a substantially vertical inner wall at an inner radius; a first surface extending from the inner wall in an orientation substantially perpendicular thereto; a first step extending from the first surface in an orientation substantially perpendicular thereto; a second surface extending from the first step in an orientation substantially perpendicular thereto; a bevel extending from the second surface and forming an angle less than about 80 degrees with the second surface; and an upper surface extending from the bevel to an outer wall at an outer radius; and
a flat lower surface with a notch formed therein.

16 . The focus ring of claim 15 , wherein the notch is formed at the outer wall.

17 . The focus ring of claim 15 , wherein the focus ring comprises a material selected from the group consisting of monocrystalline silicon, silicon carbide, silicon nitride, silicon oxycarbide, and combinations thereof.

Assignees

• Applied Materials Inc

Inventors

• Hammond Iv Edward P
• Zou Jing
• Belen Rodolfo P
• Shen Meihua
• Gani Nicolas
• Nguyen Andrew
• Palagashvili David
• Willwerth Michael D

Classifications

• H10P72/7611

  characterised by edge profile or support profile · CPC title

• H10P72/0421

  for drying etching · CPC title

• H01J37/3244

  Gas supply means · CPC title

• H01J37/32642 Primary

  Focus rings · CPC title

• H01J37/32623

  Mechanical discharge control means · CPC title