Substrate Tuning System and Method Using Optical Projection

Patent metadata

Field	Value
Publication number	US-2016147164-A1
Application number	US-201514974974-A
Country	US
Kind code	A1
Filing date	Dec 18, 2015
Priority date	Nov 27, 2013
Publication date	May 26, 2016
Grant date	—

Abstract

Techniques herein include systems and methods that provide a spatially-controlled or pixel-based projection of light onto a substrate to tune various substrate properties. A given pixel-based image projected on to a substrate surface can be based on a substrate signature. The substrate signature can spatially represent non-uniformities across the surface of the substrate. Such non-uniformities can include energy, heat, critical dimensions, photolithographic exposure dosages, etc. Such pixel-based light projection can be used to tune various properties of substrates, including tuning of critical dimensions, heating uniformity, evaporative cooling, and generation of photo-sensitive agents. Combining such pixel-based light projection with photolithographic patterning processes and/or heating processes improves processing uniformity and decreases defectivity.

First claim

1 . A processing system for treating substrates, the processing system comprising:
a chamber sized and configured to receive a substrate for processing; a substrate holder positioned within the chamber and configured to hold the substrate; an image projection system configured to project an image onto a working surface of the substrate when the substrate is in the chamber, the image projection system using a micro-mirror projection device to project the image; and a controller configured to control the image projection system and cause the image projection system to project a pixel-based image onto the working surface of the substrate.

2 . The processing system of claim 1 , wherein the image projection system uses a pixel-based projection system.

3 . The processing system of claim 2 , wherein each projected pixel can be varied by a parameter selected from the group consisting of light intensity and light amplitude.

4 . The processing system of claim 2 , wherein the image projection system is configured to project the image based on a predetermined substrate signature.

5 . The processing system of claim 4 , wherein the image projection system is configured to project a given image on to the working surface of the substrate line-by-line.

6 . The processing system of claim 4 , wherein the image projection system is configured to project the image based additionally on a CD etch signature of a given etch chamber.

7 . The processing system of claim 6 , wherein the image projection system is configured to project the image to create a biased CD signature on a substrate for CD normalization during a subsequent etch process.

8 . The processing system of claim 4 , wherein the image projection system is configured to project a given image on to the working surface of the substrate by using one or more mirrors configured to move a laser beam across the working surface and vary an amount of laser radiation directed at each pixel location of the working surface of the substrate.

9 . The processing system of claim 8 , wherein the image projection system includes a laser galvanometer device.

10 . The processing system of claim 9 , wherein the image projection system includes a light source configured to provide actinic radiation to a given substrate.

11 . The processing system of claim 10 , wherein the light source is configured to provide radiation of less than 400 nanometer wavelengths.

12 . The processing system of claim 1 , wherein the image projection system uses a digital light processing (DLP) device or grating light valve (GLV) device or laser galvanometer device to project the image onto the working surface of the substrate.

13 . The processing system of claim 12 , wherein the image projection system is configured to project a given image on to the working surface of the substrate in less than 60 seconds.

14 . The processing system of claim 12 , wherein the image projection system is configured to project a given image on to the working surface of the substrate multiple times per second.

15 . The processing system of claim 12 , wherein each projected pixel intensity is based on a critical dimension signature of the substrate.

16 . The processing system of claim 12 , wherein the chamber is positioned within a semiconductor fabrication tool that includes at least one module that dispenses liquid on a spinning substrate, and includes at least one module with a heating mechanism for heating a substrate.

17 . The processing system of claim 12 , wherein the chamber is positioned within a semiconductor fabrication tool that includes:
at least one module configured to dispense photoresist on a substrate; at least one module configured to dispense developing chemicals on a substrate; and at least one module configured to bake a substrate.

18 . A processing system for treating substrates, the processing system comprising:
a chamber sized and configured to receive a substrate for processing; a substrate holder positioned within the chamber and configured to hold the substrate; an image projection system configured to project an image onto a working surface of the substrate when the substrate is in the chamber, the image projection system using a micro-mirror projection device to project the image; and a controller configured to control the image projection system and cause the image projection system to project a pixel-based image onto the working surface of the substrate in which the pixel-based image is based on a substrate signature that spatially maps different characteristics of the working surface of the substrate.

19 . The processing system of claim 18 , wherein the image projection system is configured to project a given image on to the working surface of the substrate by using one or more mirrors configured to move a laser beam across the working surface and vary an amount of laser radiation directed at each pixel location of the working surface of the substrate, and wherein the controller is configured to generate the pixel-based image based on a critical dimension signature of the substrate.

20 . The processing system of claim 18 , wherein the image projection system is further configured to project the image based on a CD etch signature of a particular etch chamber.

Assignees

• Tokyo Electron Ltd

Inventors

• Devilliers Anton J

Classifications

• H10P74/203

  Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects · CPC title

• H10P76/2041

  Photolithographic processes · CPC title

• H10P72/0604

  Process monitoring, e.g. flow or thickness monitoring · CPC title

• H10P72/0602 Primary

  Temperature monitoring · CPC title

• G02B26/085

  the reflecting means being moved or deformed by electromagnetic means · CPC title