Plasma confinement ring, semiconductor manufacturing apparatus including the same, and method of manufacturing a semiconductor device using the same

Patent metadata

Field	Value
Publication number	US-12494352-B2
Application number	US-202117548775-A
Country	US
Kind code	B2
Filing date	Dec 13, 2021
Priority date	Apr 29, 2021
Publication date	Dec 9, 2025
Grant date	Dec 9, 2025

Abstract

A plasma confinement ring includes a lower ring, an upper ring on the lower ring, and a connection ring extended to connect the lower ring to the upper ring. The lower ring includes a lower center hole vertically penetrating the lower ring at a center of the lower ring and at least one slit penetrating the lower ring in a region outside the lower center hole. The slit is structured to pass a more amount of air or gas at a first portion closer to the center of the lower ring than at a second portion farther from the center of the lower ring.

First claim

What is claimed is:

1 . A plasma confinement ring comprising: a lower ring;
an upper ring on the lower ring; and
a connection ring extended to connect the lower ring to the upper ring,
wherein the lower ring comprises:
a lower center hole vertically penetrating the lower ring at a center of the lower ring; and
a plurality of slits penetrating the lower ring from a top surface to a bottom surface thereof in a region outside the lower center hole,
wherein a thickness of the lower ring is smaller at a first region closer to the lower center hole than a second region farther from the lower center hole,
wherein the first region of the lower ring is included in a variable region of the lower ring of which a thickness decreases, in a continuous, non-stepwise manner, toward the center of the lower ring, and the second region of the lower ring is included in a non-variable region of the lower ring of which a thickness is constant toward the center of the lower ring,
wherein each of the plurality of slits comprises a first end and a second end spaced apart from each other in a radial direction of the lower ring,
wherein a ratio of a width in a circumferential direction to a thickness of each of the plurality of slits increases from the first end to the second end, and
wherein, in the first region of each of the plurality of slits, the ratio of the width in the circumferential direction to the thickness ranges from 0.37 to 1.5.

2 . The plasma confinement ring of claim 1 , wherein widths of the plurality of slits are same or substantially same in an entire region across the lower ring.

3 . The plasma confinement ring of claim 1 , wherein, in the first region, a vertical distance between the top surface of the lower ring and the bottom surface of the upper ring ranges from 0.5 mm to 5 mm.

4 . The plasma confinement ring of claim 1 , wherein a length of each of the plurality of slits in the radial direction of the lower ring is greater than a half of a length of the lower ring in the radial direction of the lower ring.

5 . The plasma confinement ring of claim 1 , wherein a ratio of a thickness of the thinnest portion of a slit, among the plurality of slits, in the variable region to a thickness of the slit in the non-variable region ranges from 0.20 to 0.55.

6 . The plasma confinement ring of claim 1 , wherein the width in the circumferential direction of each of the plurality of slits increases toward the center of the lower ring.

7 . A semiconductor manufacturing apparatus comprising a plasma confinement ring, wherein the plasma confinement ring comprises:
a lower ring providing a lower center hole and having a circular plate shape;
an upper ring providing an upper center hole and having the circular plate shape; and
a connection ring downwardly extended from the upper ring toward the lower ring to connect the lower ring to the upper ring,
wherein the lower ring comprises:
a lower connection member providing the lower center hole; and
a lower body placed outside the lower connection member to provide a plurality of slits extended in a direction from the lower center hole to a circumference of the lower ring,
wherein a thickness of each of the plurality of slits at a first position, which is spaced apart from a center axis of the lower ring by a first distance, is smaller than a thickness of each of the plurality of slits at a second position, which is spaced apart from the center axis of the lower ring by a second distance greater than the first distance,
wherein, at the first position, a ratio of a width of each of the plurality of slits in a circumferential direction to the thickness of each of the plurality of slits ranges from 0.37 to 1.5, wherein a thickness of the lower ring linearly increases in a continuous, non-stepwise manner, from the first position to the second position,
wherein each of the plurality of slits has a constant width toward a center of the lower ring, and wherein a length of each of the plurality of slits in a radial direction of the lower ring is greater than a half of a length of the lower ring in the radial direction of the lower ring.

8 . The semiconductor manufacturing apparatus of claim 7 , wherein the width of each of the plurality of slits at the first position ranges from 2.3 mm to 2.7 mm, and wherein the thickness of each of the plurality of slits at the first position ranges from 3.0 mm to 5.0 mm.

9 . The semiconductor manufacturing apparatus of claim 7 , wherein a vertical distance between a top surface of the lower ring and a bottom surface of the upper ring at the first position ranges from 0.5 mm to 5 mm.

10 . The semiconductor manufacturing apparatus of claim 7 , wherein widths of the plurality of slits are same or substantially same in an entire region across the lower ring.

11 . The semiconductor manufacturing apparatus of claim 7 , wherein the lower ring is coupled to the connection ring in a manner detachable from the connection ring.

12 . The semiconductor manufacturing apparatus of claim 7 , wherein a thickness of the lower ring is smaller at the first position than at the second position.

13 . A plasma confinement ring comprising: a lower ring;
an upper ring on the lower ring; and a connection ring extended to connect the lower ring to the upper ring, wherein the lower ring is provided to have a lower center hole vertically penetrating the lower ring at a center of the lower ring, wherein the lower ring comprises a plurality of slits penetrating the lower ring in a region outside the lower center hole, wherein a thickness of the lower ring is smaller at a first region closer to the lower center hole than a second region farther from the lower center hole, wherein the first region of the lower ring is included in a variable region of the lower ring of which a thickness linearly decreases, in a continuous, non-stepwise manner, toward the center of the lower ring, and the second region of the lower ring is included in a non-variable region of the lower ring of which a thickness is constant toward the center of the lower ring, wherein each of the plurality of slits has a width increasing toward the center of the lower ring wherein the width of each of the plurality of slits is measured in a circumferential direction of the lower ring, wherein the plurality of slits are spaced apart from each other in the circumferential direction of the lower ring, and wherein, at a first position spaced apart from a center axis of the lower ring by a first distance, a ratio of the width of each of the plurality of slits to a thickness of each of the plurality of slits ranges from 0.37 to 1.5.

14 . The plasma confinement ring of claim 13 , wherein a ratio of
the width to the thickness of each of the plurality of slits at the first position is greater than a ratio of the width to the thickness of each of the plurality of slits at a second position spaced apart from the center axis of the lower ring by a second distance greater than the first distance.

15 . The plasma confinement ring of claim 13 , wherein widths
of the plurality of slits are same or substantially same in an entire region along the circumferential direction of the lower ring.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Yoon Kuihyun
• Nam Sang Ki
• Seo Kwonsang
• Jang Sungho
• Ko Jungmin
• Kim Nam Kyun
• Kim Tae-Hyun
• Baek Seunghan
• Ahn Seungbin
• Yang Jungmo
• Lee Changheon
• Jeon Kangmin

Classifications

• H10P50/242

  of Group IV materials · CPC title

• H01J37/32642 Primary

  Focus rings · CPC title

• H01J37/32715

  Workpiece holder · CPC title

• H01J37/32697

  Electrostatic control · CPC title

• H01J37/3244 Primary

  Gas supply means · CPC title