Capacitive sensors and capacitive sensing locations for plasma chamber condition monitoring

Patent metadata

Field	Value
Publication number	US-12437979-B2
Application number	US-202016812075-A
Country	US
Kind code	B2
Filing date	Mar 6, 2020
Priority date	Mar 6, 2020
Publication date	Oct 7, 2025
Grant date	Oct 7, 2025

Abstract

Capacitive sensors and capacitive sensing locations for plasma chamber condition monitoring are described. In an example, a plasma processing chamber includes a chamber wall surrounding a processing region. A chamber lid is over the chamber wall and above the processing region. A chamber floor is beneath the chamber wall and below the processing region. A support pedestal is in the processing region and below the chamber lid and above the chamber floor, and the support pedestal surrounded by the chamber wall. A capacitive sensor module can be in an opening of the chamber wall. The chamber lid can include a capacitive sensor module. The chamber floor can include an evacuation port and a capacitive sensor module within or adjacent to the evacuation port. The support pedestal can include a ring structure surrounding a substrate support region, and a capacitive sensor module in an opening of the ring structure.

First claim

What is claimed is:

1. A plasma processing chamber, comprising:
a chamber wall surrounding a processing region, the chamber wall comprising an opening there through;
a capacitive sensor module in the opening of the chamber wall, the capacitive sensor module extending continuous from a location within the opening of the chamber wall to a location outside of the opening of the chamber wall and within the processing region, wherein the capacitive sensor module is a single sensor module comprising a capacitive sensor integrated with a thermal sensor, the capacitive sensor intervening between the thermal sensor and the processing region such that the capacitive sensor is proximate to the processing region and the thermal sensor is distal from the processing region;
a chamber lid over the chamber wall, the chamber lid above the processing region;
a chamber floor beneath the chamber wall, the chamber floor below the processing region; and
a support pedestal in the processing region, the support pedestal below the chamber lid and above the chamber floor, the support pedestal surrounded by the chamber wall, and the support pedestal having an electrode, wherein the capacitive sensor module is in a location vertically between the electrode of the support pedestal and the chamber floor.

2. The plasma processing chamber of claim 1 , wherein the chamber lid comprises a second capacitive sensor module.

3. The plasma processing chamber of claim 2 , wherein the chamber floor comprises an evacuation port, and wherein the plasma processing chamber comprises a third capacitive sensor module within or adjacent to the evacuation port.

4. The plasma processing chamber of claim 3 , wherein the support pedestal comprises a ring structure surrounding a substrate support region, the ring structure comprising an opening there through, and wherein the plasma processing chamber comprises a fourth capacitive sensor module in the opening of the ring structure.

5. The plasma processing chamber of claim 2 , wherein the support pedestal comprises a ring structure surrounding a substrate support region, the ring structure comprising an opening there through, and wherein the plasma processing chamber comprises a third capacitive sensor module in the opening of the ring structure.

6. The plasma processing chamber of claim 1 , wherein the chamber floor comprises an evacuation port, and wherein the plasma processing chamber comprises a second capacitive sensor module within or adjacent to the evacuation port.

7. The plasma processing chamber of claim 6 , wherein the support pedestal comprises a ring structure surrounding a substrate support region, the ring structure comprising an opening there through, and wherein the plasma processing chamber comprises a third capacitive sensor module in the opening of the ring structure.

8. The plasma processing chamber of claim 1 , wherein the support pedestal comprises a ring structure surrounding a substrate support region, the ring structure comprising an opening there through, and wherein the plasma processing chamber comprises a second capacitive sensor module in the opening of the ring structure.

9. A plasma processing chamber, comprising:
a chamber wall surrounding a processing region;
a chamber lid over the chamber wall, the chamber lid above the processing region, wherein the chamber lid comprises an opening there through, and a capacitive sensor module in the opening of the lid, the capacitive sensor module extending continuous from a location within the opening of the lid to a location outside of the opening of the lid and within the processing region, wherein the capacitive sensor module is a single sensor module comprising a capacitive sensor integrated with a thermal sensor, the capacitive sensor intervening between the thermal sensor and the processing region such that the capacitive sensor is proximate to the processing region and the thermal sensor is distal from the processing region;
a chamber floor beneath the chamber wall, the chamber floor below the processing region; and
a support pedestal in the processing region, the support pedestal below the chamber lid and above the chamber floor, the support pedestal surrounded by the chamber wall, and the support pedestal having a support region and a plasma screen surrounding the support region, wherein the capacitive sensor module is in a location vertically over the plasma screen of the support pedestal.

10. The plasma processing chamber of claim 9 , wherein the chamber floor comprises an evacuation port, and wherein the plasma processing chamber comprises a second capacitive sensor module within or adjacent to the evacuation port.

11. The plasma processing chamber of claim 10 , wherein the support pedestal comprises a ring structure surrounding a substrate support region, the ring structure comprising an opening there through, and wherein the plasma processing chamber comprises a third capacitive sensor module in the opening of the ring structure.

12. The plasma processing chamber of claim 9 , wherein the support pedestal comprises a ring structure surrounding a substrate support region, the ring structure comprising an opening there through, and wherein the plasma processing chamber comprises a second capacitive sensor module in the opening of the ring structure.

Assignees

• Applied Materials Inc

Inventors

• Pan Yaoling
• Tae Patrick John
• Tedeschi Leonard
• Kraus Philip Allan
• Willwerth Michael D

Classifications

• H01J37/32834 Primary

  Exhausting · CPC title

• H01J2237/334

  Etching · CPC title

• H01J2237/24585

  Other variables, e.g. energy, mass, velocity, time, temperature · CPC title

• H01J2237/24564

  Measurements of electric or magnetic variables, e.g. voltage, current, frequency · CPC title

• H01J2237/3321

  CVD [Chemical Vapor Deposition] · CPC title