Wafer processing equipment having exposable sensing layers

Patent metadata

Field	Value
Publication number	US-9725302-B1
Application number	US-201615247717-A
Country	US
Kind code	B1
Filing date	Aug 25, 2016
Priority date	Aug 25, 2016
Publication date	Aug 8, 2017
Grant date	Aug 8, 2017

Abstract

Embodiments include devices and methods for detecting particles, monitoring etch or deposition rates, or controlling an operation of a wafer fabrication process. In an embodiment, one or more micro sensors are mounted on wafer processing equipment, and are capable of measuring material deposition and removal rates in real-time. The micro sensors are selectively exposed such that a sensing layer of a micro sensor is protected by a mask layer during active operation of another micro sensor, and the protective mask layer may be removed to expose the sensing layer when the other micro sensor reaches an end-of-life. Other embodiments are also described and claimed.

First claim

What is claimed is:

1. A wafer processing tool, comprising:
a process chamber having a chamber volume;
a first micro sensor mounted within the chamber volume, wherein the first micro sensor includes a first mask layer over a first sensing layer; and
a second micro sensor mounted within the chamber volume, wherein the second micro sensor includes a second mask layer over a second sensing layer;
wherein the first micro sensor and the second micro sensor have respective parameters and include respective sensor surfaces on the respective sensing layers, and wherein the respective parameters change when material is removed from the respective sensor surfaces.

2. The wafer processing tool of claim 1 , further comprising an exposed sensing layer mounted within the chamber volume and open to the chamber volume.

3. The wafer processing tool of claim 2 , wherein the first mask layer has a first thickness and the second mask layer has a second thickness different than the first thickness.

4. The wafer processing tool of claim 3 , wherein the first mask layer and the second mask layer are portions of a blanket mask layer having a layer profile including a variable thickness.

5. The wafer processing tool of claim 2 , wherein the first mask layer has a first mask material, wherein the second mask layer has a second mask material, and wherein the first mask material is susceptible to etching by an etchant within the chamber volume and the second mask material is not susceptible to etching by the etchant.

6. The wafer processing tool of claim 5 , wherein the first micro sensor includes the exposed sensing layer, and wherein the first mask layer is between the exposed sensing layer and the first sensing layer.

7. The wafer processing tool of claim 6 further comprising an intermediate mask layer between the exposed sensing layer and the first sensing layer.

8. The wafer processing tool of claim 1 , wherein the micro sensors include micro sensors, wherein the respective parameters are capacitances of the micro sensors, and wherein the capacitances change when a material is removed from the respective sensor surfaces.

9. A particle monitoring device, comprising:
a wafer substrate including wafer electronics and a support surface;
a first micro sensor mounted on the support surface, wherein the first micro sensor includes a first mask layer over a first sensing layer; and
a second micro sensor mounted on the support surface, wherein the second micro sensor includes a second mask layer over a second sensing layer;
wherein the first micro sensor and the second micro sensor have respective parameters and include respective sensor surfaces on the respective sensing layers, and wherein the respective parameters change when material is removed from the respective sensor surfaces.

10. The particle monitoring device of claim 9 , further comprising an exposed sensing layer mounted on the support surface and open to a surrounding environment.

11. The particle monitoring device of claim 10 , wherein the first mask layer has a first thickness and the second mask layer has a second thickness different than the first thickness.

12. The particle monitoring device of claim 11 , wherein the first mask layer and the second mask layer are portions of a blanket mask layer having a layer profile including a variable thickness.

13. The particle monitoring device of claim 10 , wherein the first mask layer has a first mask material, wherein the second mask layer has a second mask material, and wherein the first mask material is susceptible to etching by an etchant within the surrounding environment and the second mask material is not susceptible to etching by the etchant.

14. The particle monitoring device of claim 13 , wherein the first micro sensor includes the exposed sensing layer, and wherein the first mask layer is between the exposed sensing layer and the first sensing layer.

15. The particle monitoring device of claim 14 further comprising an intermediate mask layer between the exposed sensing layer and the first sensing layer.

16. The particle monitoring device of claim 9 , wherein the micro sensors include micro sensors, wherein the respective parameters are capacitances of the micro sensors, and wherein the capacitances change when material is removed from the respective sensor surfaces.

17. A method, comprising:
initiating a wafer fabrication process in a process chamber having a chamber volume, wherein a first micro sensor and a second micro sensor are disposed within the process chamber, and wherein a first sensing layer of the first micro sensor and a second mask layer of the second micro sensor are exposed to the chamber volume;
etching a first sensor surface on the first sensing layer of the first micro sensor by an etchant; and
stripping the second mask layer of the second micro sensor to expose a second sensor surface on a second sensing layer of the second micro sensor to the chamber volume.

18. The method of claim 17 , wherein the micro sensors include micro sensors having respective capacitances, and wherein the respective capacitances change when material is removed from the respective sensor surfaces.

19. The method of claim 18 further comprising:
measuring the respective capacitances; and
determining, based on the respective capacitances, whether the second sensor surface on the second sensing layer is exposed to the chamber volume.

20. The method of claim 18 , wherein the etchant removes material from the first sensor surface and does not remove material from the second mask layer.

Assignees

• Applied Materials Inc

Inventors

• Tedeschi Leonard
• Ji Lili
• Joubert Olivier
• Lubomirsky Dmitry
• Kraus Philip Allan
• Mccormick Daniel T

Classifications

• H10P72/0616 Primary

  Monitoring of warpages, curvatures, damages, defects or the like · CPC title

• H10P74/27

  Structural arrangements therefor · CPC title

• B81C1/00412

  Mask characterised by its behaviour during the etching process, e.g. soluble masks · CPC title

• B81C1/00031

  Regular or irregular arrays of nanoscale structures, e.g. etch mask layer (photomechanical, e.g. photolithographic, production of textured or patterned surfaces G03F7/00; lithographic processes for making patterned surfaces using printing and stamping G03F7/0002) · CPC title

• B81B2201/047

  Optical MEMS not provided for in B81B2201/042 - B81B2201/045 · CPC title