Molybdenum(0) precursors for deposition of molybdenum films

Patent metadata

Field	Value
Publication number	US-12415824-B2
Application number	US-202318232421-A
Country	US
Kind code	B2
Filing date	Aug 10, 2023
Priority date	Apr 21, 2021
Publication date	Sep 16, 2025
Grant date	Sep 16, 2025

Abstract

Molybdenum(0) and coordination complexes are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum disulfide, molybdenum nitride). The exposures can be sequential or simultaneous.

First claim

What is claimed is:

1. A method of depositing a film, the method comprising:
exposing a substrate to a molybdenum(0) precursor having a structure selected from the group consisting of:

Mo(CO) n (CNMe) (6-n) wherein n is from 1 to 3, Mo(CO) n (Py) (6-n) wherein n is from 1 to 3, Mo(CO) n (SMe 2 ) (6-n) wherein n is from 1 to 3,

 wherein n is from 1 to 3 and L is selected from the group consisting of a 2n-electron donor neutral monodentate ligand, a 2n-electron donor neutral bidentate ligand, a 2n-electron donor neutral tridentate ligand, and combinations thereof; and
exposing the substrate to a reactant to form a molybdenum-containing film on a substrate surface, the molybdenum-containing film substantially free of halogen.

2. The method of claim 1 , wherein the reactant comprises one or more of an oxidizing agent and a reducing agent.

3. The method of claim 1 , wherein the molybdenum-containing film comprises one or more of a molybdenum metal (elemental Mo) film, a molybdenum oxide film, a molybdenum carbide film, a molybdenum silicide film, a molybdenum disulfide film, and a molybdenum nitride film.

4. The method of claim 1 , wherein the substrate is exposed to the molybdenum(0) precursor and the reactant sequentially.

5. The method of claim 1 , wherein the substrate is exposed to the molybdenum(0) precursor and the reactant simultaneously.

6. The method of claim 1 , further comprising purging the substrate surface of the molybdenum(0) precursor prior to exposing the substrate to the reactant.

7. The method of claim 6 , wherein purging comprises one or more of applying a vacuum or flowing a purge gas over the substrate surface.

8. The method of claim 7 , wherein the purge gas comprises one or more of nitrogen (N 2 ), helium (He), and argon (Ar).

9. A method of depositing a film, the method comprising:
forming a molybdenum-containing film in a process cycle comprising sequential exposure of a substrate to a molybdenum(0) precursor, purge gas, reactant, and purge gas, wherein the molybdenum(0) precursor has a structure

selected from the group consisting of: Mo(CO) n (CNMe) (6-n) wherein n is from 1 to 3, Mo(CO) n (Py) (6-n) wherein n is from 1 to 3, Mo(CO) n (SMe 2 ) (6-n) wherein n is from 1 to 3,

 wherein n is from 1 to 3 and L is selected from the group consisting of a 2n-electron donor neutral monodentate ligand, a 2n-electron donor neutral bidentate ligand, a 2n-electron donor neutral tridentate loand, and combinations thereof.

10. The method of claim 9 , wherein the molybdenum(0) precursor is substantially free of halogen and substantially free of a Mo—O bond.

11. The method of claim 9 , wherein purging comprises one or more of applying a vacuum or flowing a purge gas over the substrate.

12. The method of claim 11 , wherein the purge gas comprises one or more of nitrogen (N 2 ), helium (He), and argon (Ar).

13. The method of claim 1 , wherein the molybdenum(0) precursor is substantially free of halogen and substantially free of a Mo—O bond.

14. The method of claim 9 , wherein the molybdenum(0) precursor is substantially free of halogen and substantially free of a Mo—O bond.

Assignees

• Applied Materials Inc

Inventors

• Barik Chandan Kr
• Sudijono John
• Das Chandan
• Yong Doreen Wei Ying
• Saly Mark
• Bhuyan Bhaskar Jyoti
• Liu Feng Q

Classifications

• C23C16/56

  After-treatment · CPC title

• C23C16/45527

  characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations · CPC title

• C23C16/18

  from metallo-organic compounds · CPC title

• C23C16/0272

  Deposition of sub-layers, e.g. to promote the adhesion of the main coating · CPC title

• C23C16/0209

  by heating · CPC title