Deposition of metal films based upon complementary reactions

Patent metadata

Field	Value
Publication number	US-9540730-B2
Application number	US-201314430282-A
Country	US
Kind code	B2
Filing date	Sep 23, 2013
Priority date	Sep 21, 2012
Publication date	Jan 10, 2017
Grant date	Jan 10, 2017

Abstract

A method comprises contacting a compound having formulae (1) with a compound having formula ML o to form a metal:

[M(SiR 3 ) m (L 1 ) p ] n   (1)

wherein
M is Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Al, a second row transition metal or a third row transition metal; R are each independently H, C 1 -C 6 alkyl or —Si(R″) 3 ; R″ are each independently H or C 1 -C 6 alkyl; m is an integer from 1 to 3; n is a number representing the formation of aggregates or polymeric material; L 1 is a neutral donor ligand;

L is a ligand;

p is an integer from 0 to 6; and
o is an integer representing the number of ligands bonded to ML o .

First claim

What is claimed is:

1. A method for forming a metal, the method comprising:
contacting a compound having formulae 1 or a surface modified with the compound having formula 1 with a compound having formula ML o to form a metal:
[M(Si(R 0 ) 3 ) m )L 1 ) p ] n   1

wherein
M is Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Al, a second row transition metal or a third row transition metal;
R 0 are each independently H or C 1 -C 6 alkyl;
R″ are each independently H or C 1 -C 6 alkyl;
m is an integer from 1 to 6;
n is a number representing formation of aggregates or polymeric material;
L is a ligand;
L 1 is a neutral donor ligand;
p is an integer from 0 to 6; and
o is an integer representing the number of ligands bonded to ML o .

2. The method of claim 1 wherein n is a number from 1 to 1000.

3. The method of claim 1 wherein n is a number from 1 to 3.

4. The method of claim 1 wherein the compound having formula 1 is:
[Cu(Si(R 0 ) 3 )(L 1 ) p ] n .

5. The method of claim 1 wherein L is tBuNNCHCHNMe 2 .

6. The method of claim 1 wherein R 0 is methyl, ethyl, n-propyl, isopropyl, n-butyl, sec-butyl, isobutyl, or t-butyl.

7. The method of claim 1 wherein ML o is:

where M is Cu, Ni, Co, or Cr; and
R, R′ are each independently C 1 -C 6 alkyl.

8. The method of claim 1 wherein ML o is:

where M is Mn or Fe.

9. The method of claim 1 wherein ML o is:

where R, R′ are each independently C 1 -C 6 alkyl.

10. The method of claim 1 wherein ML o is:

11. The method of claim 1 wherein ML o is:

where R, R′ are each independently C 1 -C 6 alkyl.

12. The method of claim 1 wherein ML o is:

where R, R′ are each independently C 1 -C 6 alkyl.

13. The method of claim 1 wherein ML o is:

14. The method of claim 1 wherein ML o is:

where M is Ni, Co, Fe, Mn, or Cr.

15. The method of claim 1 wherein ML o is

where M is Ni, Co, Fe, Mn, or Cr.

16. The method of claim 1 wherein ML o is:

where M is Ni, Co, Fe, Mn, or Cr.

17. The method of claim 1 wherein ML o is:

where M is Ni, Co, Fe, Mn, or Cr; and
R, R′ are each independently C 1 -C 6 alkyl.

18. The method of claim 1 wherein the compound having formula 1 is reacted with ML o in the liquid phase.

19. The method of claim 1 wherein the compound having formula 1 is reacted with ML o in a deposition cycle comprising
a) contacting a substrate with a vapor of the compound having formula 1; and
b) contacting the substrate with a vapor of ML o .

20. The method of claim 19 wherein the deposition cycle is repeated 1 to 5000 times.

21. The method of claim 19 wherein the substrate is at a temperature from about 0 to 1000° C.

22. The method of claim 19 wherein the substrate is contacted with a purge gas after step a) and prior to step b) and after step b).

23. The method of claim 1 wherein the compound having formula 1 is reacted with ML o in a deposition cycle comprising
a) contacting a substrate with a vapor of ML o ; and
b) contacting the substrate with a vapor of the compound having formula 1.

24. The method of claim 23 wherein the deposition cycle is repeated 1 to 5000 times.

25. The method of claim 23 wherein the substrate is at a temperature from about 0 to 1000° C.

26. The method of claim 23 wherein the substrate is contacted with a purge gas after step a) and prior to step b) and after step b).

27. The method of claim 1 wherein L is C 1-6 alkyl, Cl, Br, or I.

28. The method of claim 27 wherein M is Zn.

29. The method of claim 1 wherein the compound having formula 1 reacts with ML o to form a compound having formula 29 prior to formation of metal:

and
L is Cl, Br, or I.

30. The method of claim 29 wherein the compound having formula 1 reacts with ML o to form a compound having formula 30 prior to formation of metal:

31. The method of claim 1 wherein M is T, Cr, Mn, Fe, Co, Ni, Cu, Zn, Al, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Hf, Ta, W, Re, Os, Ir, Pt, or Au.

32. The method of claim 1 wherein M is Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, or Al.

Assignees

• Univ Wayne State

Inventors

• Winter Charles H

Classifications

• C23C16/45553 Primary

  characterized by the use of precursors specially adapted for ALD · CPC title

• C23C16/06

  characterised by the deposition of metallic material · CPC title

• C07F19/00

  Metal compounds according to more than one of main groups C07F1/00 - C07F17/00 · CPC title