Method for producing thin film containing molybdenum

Patent metadata

Field	Value
Publication number	US-9695207-B2
Application number	US-201314421154-A
Country	US
Kind code	B2
Filing date	Oct 15, 2013
Priority date	Nov 19, 2012
Publication date	Jul 4, 2017
Grant date	Jul 4, 2017

Abstract

In the method of the present invention for producing a thin film, including introducing, onto a substrate, a vapor that has been obtained by vaporizing a thin-film-forming material including a molybdenum imide compound represented by the following formula (I) and that includes the molybdenum imide compound; and then forming a thin film including molybdenum on the substrate by decomposing and/or chemically reacting the molybdenum imide compound.

(In the formula, R 1 though R 10 each represent a hydrogen atom or a linear or branched alkyl group having 1 to 5 carbon atoms, and R 11 represents a linear or branched alkyl group having 1 to 8 carbon atoms.)

First claim

The invention claimed is:

1. A method for producing a thin film, comprising:
introducing, onto a substrate, a vapor that has been obtained by vaporizing a thin-film-forming material comprising a molybdenum imide compound represented by the following formula (II) and that comprises the molybdenum imide compound; and
forming a thin film comprising molybdenum on the substrate by decomposing and/or chemically reacting the molybdenum imide compound,

wherein R 12 through R 21 each represent a hydrogen atom or a linear or branched alkyl group having 1 to 5 carbon atoms, R 22 and R 23 each represent a methyl group or an ethyl group, and R 24 represents a linear or branched alkyl group having 2 to 5 carbon atoms.

2. The method of claim 1 , wherein in formula (II), the linear or branched alkyl group having 1 to 5 carbon atoms represented by R 12 to R 21 include methyl, ethyl, propyl, isopropyl, butyl, secondary butyl, tertiary butyl, isobutyl, pentyl, secondary pentyl, tertiary pentyl, isopentyl, and neopentyl.

3. The method of claim 1 , wherein in formula (II), the R 12 to R 21 are hydrogen atoms, R 22 and R 23 are methyl groups, and R 24 is ethyl or neopentyl and compounds in which one of R 12 to R 16 is a methyl group, one of R 17 to R 21 is a methyl group, R 22 and R 23 are methyl groups, and R 24 is ethyl or neopentyl.

4. The method of claim 1 , wherein in formula (II), the R 12 to R 21 are hydrogen atoms, R 22 and R 23 are methyl groups, and R 24 is neopentyl and a compound in which one of R 12 to R 16 is a methyl group, one of R 17 to R 21 is a methyl group, R 22 and R 23 are methyl groups, and R 24 is ethyl or neopentyl.

5. The method of claim 1 , wherein the imide compound is one of the following:

6. The method of claim 1 , wherein the method uses chemical vapor deposition using at least one source solvent selected from the group consisting of ester acetates, ethyl acetate, butyl acetate, methoxyethyl acetate, ether alcohols, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monobutyl ether, diethylene glycol monomethyl ether, tetrahydrofuran, tetrahydropyran, ethylene glycol dimethyl ether, diethylene glycol dimethyl ether, triethylene glycol dimethyl ether, dibutyl ethers, dioxanes, methyl butyl ketone, methyl isobutyl ketone, ethyl butyl ketone, dipropyl ketone, diisobutyl ketone, methyl amyl ketone, cyclohexanone, methylcyclohexanone, such as hexane, cyclohexane, methylcyclohexane, dimethylcyclohexane, ethylcyclohexane, heptane, octane, toluene, xylenes, 1-cyanopropane, 1-cyanobutane, 1-cyanohexane, cyanocyclohexane, cyanobenzene, 1,3-dicyanopropane, 1,4-dicyanobutane, 1,6-dicyanohexane, 1,4-dicyanocyclohexane, 1,4-dicyanobenzene, pyridine and lutidine.

7. The method according to claim 6 , wherein the imide compound is present in the solvent at 0.01 to 2.0 mol/liter.

8. The method of claim 1 , wherein there are 100 ppb or less of metal element impurities for each element.

9. The method of claim 1 , wherein there are not more than 500 ppm of organic impurities.

10. The method of claim 1 , wherein an amount of halogen impurities is 100 ppm or less.

11. The method of claim 1 , wherein an amount of halogen impurities is 10 ppm or less.

12. The method of claim 1 , wherein an amount of halogen impurities is 1 ppm or less.

Assignees

• Adeka Corp

Inventors

• Sato Hiroki
• Ueyama Junji

Classifications

• C23C16/405

  of refractory metals or yttrium · CPC title

• C23C16/44

  characterised by the method of coating (C23C16/04 takes precedence) · CPC title

• C23C16/18 Primary

  from metallo-organic compounds · CPC title

• C23C16/45525

  Atomic layer deposition [ALD] · CPC title

• C07F17/00 Primary

  Metallocenes · CPC title